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Электронный компонент: MPS2222

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Semiconductor Components Industries, LLC, 2001
October, 2001 Rev. 1
1
Publication Order Number:
MPS2222/D
MPS2222, MPS2222A
MPS2222A is a Preferred Device
General Purpose
Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MPS2222
MPS2222A
VCEO
30
40
Vdc
CollectorBase Voltage
MPS2222
MPS2222A
VCBO
60
75
Vdc
EmitterBase Voltage
MPS2222
MPS2222A
VEBO
5.0
6.0
Vdc
Collector Current Continuous
IC
600
mAdc
Total Device Dissipation
@ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation
@ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to
+150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
R
JA
200
C/W
Thermal Resistance,
Junction to Case
R
JC
83.3
C/W
Device
Package
Shipping
ORDERING INFORMATION
MPS2222
TO92
http://onsemi.com
5000 Units/Box
Preferred devices are recommended choices for future use
and best overall value.
MPS2222A
TO92
5000 Units/Box
COLLECTOR
3
2
BASE
1
EMITTER
MPS2222ARLRA
TO92
2000/Tape & Reel
MPS2222ARLRM
TO92
2000/Ammo Pack
MPS2222ARLRP
TO92
2000/Ammo Pack
MPS2222RLRA
TO92
2000/Tape & Reel
MPS2222RLRM
TO92
2000/Ammo Pack
MPS2222RLRP
TO92
2000/Ammo Pack
TO92
CASE 29
STYLE 1
3
2
1
Y
= Year
WW
= Work Week
MARKING DIAGRAMS
MPS
2222
YWW
MPS2
222A
YWW
MPS2222, MPS2222A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
MPS2222
(IC = 10 mAdc, IB = 0)
MPS2222A
V(BR)CEO
30
40

Vdc
CollectorBase Breakdown Voltage
MPS2222
(IC = 10
m
Adc, IE = 0)
MPS2222A
V(BR)CBO
60
75

Vdc
EmitterBase Breakdown Voltage
MPS2222
(IE = 10
m
Adc, IC = 0)
MPS2222A
V(BR)EBO
5.0
6.0

Vdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MPS2222A
ICEX
10
nAdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
MPS2222
(VCB = 60 Vdc, IE = 0)
MPS2222A
(VCB = 50 Vdc, IE = 0, TA = 125
C)
MPS2222
(VCB = 50 Vdc, IE = 0, TA = 125
C)
MPS2222A
ICBO



0.01
0.01
10
10
Adc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
MPS2222A
IEBO
100
nAdc
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MPS2222A
IBL
20
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55
C)
MPS2222A only
(IC = 150 mAdc, VCE = 10 Vdc) (Note 1.)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1.)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 1.)
MPS2222
MPS2222A
hFE
35
50
75
35
100
50
30
40



300


CollectorEmitter Saturation Voltage (Note 1.)
(IC = 150 mAdc, IB = 15 mAdc)
MPS2222
MPS2222A
(IC = 500 mAdc, IB = 50 mAdc)
MPS2222
MPS2222A
VCE(sat)


0.4
0.3
1.6
1.0
Vdc
BaseEmitter Saturation Voltage (Note 1.)
(IC = 150 mAdc, IB = 15 mAdc)
MPS2222
MPS2222A
(IC = 500 mAdc, IB = 50 mAdc)
MPS2222
MPS2222A
VBE(sat)
0.6

1.3
1.2
2.6
2.0
Vdc
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2%.
MPS2222, MPS2222A
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Note 2.)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
MPS2222
MPS2222A
fT
250
300

MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MPS2222
MPS2222A
Cibo

30
25
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
hie
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
hre

8.0
4.0
X 104
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
hfe
50
75
300
375
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
hoe
5.0
25
35
200
m
mhos
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MPS2222A
rb
Cc
150
ps
Noise Figure
(IC = 100
m
Adc, VCE = 10 Vdc, RS = 1.0 k
, f = 1.0 kHz)
MPS2222A
NF
4.0
dB
SWITCHING CHARACTERISTICS MPS2222A only
Delay Time
(VCC = 30 Vdc, VBE(off) = 0.5 Vdc,
td
10
ns
Rise Time
(VCC 30 Vdc, VBE(off) 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
tr
25
ns
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
ts
225
ns
Fall Time
(VCC 30 Vdc, IC 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
tf
60
ns
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. TurnOn Time
Figure 2. TurnOff Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
-2 V
< 2 ns
0
1.0 to 100
s,
DUTY CYCLE
2.0%
1 k
+30 V
200
CS* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100
s,
DUTY CYCLE
2.0%
1 k
+30 V
200
CS* < 10 pF
-4 V
1N914
MPS2222, MPS2222A
http://onsemi.com
4
1000
10
20
30
50
70
100
200
300
500
700
1.0 k
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200 300
500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
h FE
, DC CURRENT
GAIN
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
1.0
0.8
0.6
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
TJ = 125
C
TJ = 25
C
25
C
-55
C
IC = 1.0 mA
10 mA
150 mA
500 mA
VCE = 1.0 V
VCE = 10 V
MPS2222, MPS2222A
http://onsemi.com
5
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME
(ns)
10
20
70
5.0
100
5.0 7.0
30
50
200
10
30
7.0
20
IC/IB = 10
TJ = 25
C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0
300
500
500
t, TIME
(ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. TurnOff Time
IC, COLLECTOR CURRENT (mA)
10
20
70 100
5.0 7.0
30
50
200 300 500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
C
t
s = ts - 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF
, NOISE FIGURE (dB)
1.0 2.0
5.0 10 20
50
0.2
0.5
0
100
NF
, NOISE FIGURE (dB)
0.01 0.02 0.05
RS = OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
IC = 1.0 mA, RS = 150
500
A, RS = 200
100
A, RS = 2.0 k
50
A, RS = 4.0 k
f = 1.0 kHz
IC = 50
A
100
A
500
A
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k
50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAP
ACIT
ANCE (pF)
1.0
2.0 3.0 5.0 7.0 10
20 30
50
0.2 0.3 0.5 0.7
Ccb
20
30
Ceb
Figure 10. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
f T
, CURRENT-GAIN BANDWIDTH PRODUCT
(MHz)
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
VCE = 20 V
TJ = 25
C