Semiconductor Components Industries, LLC, 2005
November, 2005 - Rev. 0
1
Publication Order Number:
NJL4281D/D
NJL4281D (NPN)
NJL4302D (PNP)
Complementary
ThermalTrakTM Transistors
The ThermalTrak family of devices has been designed to eliminate
thermal equilibrium lag time and bias trimming in audio amplifier
applications. They can also be used in other applications as transistor
die protection devices.
Features
Thermally Matched Bias Diode
Instant Thermal Bias Tracking
Absolute Thermal Integrity
High Safe Operating Area
Benefits
Eliminates Thermal Equilibrium Lag Time and Bias Trimming
Superior Sound Quality Through Improved Dynamic Temperature
Response
Significantly Improved Bias Stability
Simplified Assembly
Reduced Labor Costs
Reduced Component Count
High Reliability
Applications
High-End Consumer Audio Products
Home Amplifiers
Home Receivers
Professional Audio Amplifiers
Theater and Stadium Sound Systems
Public Address Systems (PAs)
TO-264, 5 LEAD
CASE 340AA
STYLE 1
MARKING DIAGRAM
http://onsemi.com
xxxx
= Specific Device Code
A
= Assembly Location
YY
= Year
WW
= Work Week
NJLxxxxD
AYYWW
ThermalTrak
SCHEMATIC
BIPOLAR POWER
TRANSISTORS
15 A, 350 V, 250 W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
NJL4281D (NPN) NJL4302D (PNP)
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
260
Vdc
Collector-Base Voltage
V
CBO
260
Vdc
Emitter-Base Voltage
V
EBO
5
Vdc
Collector-Emitter Voltage - 1.5 V
V
CEX
260
Vdc
Collector Current
- Continuous
- Peak (Note 1)
I
C
15
25
Adc
Base Current - Continuous
I
B
1.5
Adc
Total Power Dissipation @ T
C
= 25
C
Derate Above 25
C
P
D
200
1.43
W
W/
C
Operating and Storage Junction Temperature Range
T
J
, T
stg
- 65 to +150
C
DC Blocking Voltage
V
R
200
V
Average Rectified Forward Current
I
F(AV)
1.0
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
R
q
JC
0.625
C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ATTRIBUTES
Characteristic
Value
ESD Protection
Human Body Model
Machine Model
>8000 V
> 400 V
Flammability Rating
UL 94 V-0 @ 0.125 in
ORDERING INFORMATION
Device
Package
Shipping
NJL4281D
TO-264
25 Units / Rail
NJL4302D
TO-264
25 Units / Rail
NJL4281D (NPN) NJL4302D (PNP)
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(I
C
= 100 mA, I
B
= 0)
V
CEO(sus)
260
-
V
Collector Cutoff Current
(V
CB
= 260 V, I
E
= 0)
I
CBO
-
50
m
A
Emitter Cutoff Current
(V
EB
= 5 V, I
C
= 0)
I
EBO
-
5
m
A
ON CHARACTERISTICS
DC Current Gain
(I
C
= 500 mA, V
CE
= 5 V)
(I
C
= 1 A, V
CE
= 5 V)
(I
C
= 3 A, V
CE
= 5 V)
(I
C
= 5 A, V
CE
= 5 V)
(I
C
= 8 A, V
CE
= 5 V)
h
FE
75
75
75
75
45
150
150
150
150
-
Collector-Emitter Saturation Voltage
(I
C
= 10 A, I
B
= 1 A)
V
CE(sat)
-
3
V
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(I
C
= 1 A, V
CE
= 5 V, f
test
= 1 MHz)
f
T
30
-
MHz
Output Capacitance
(V
CB
= 10 V, I
E
= 0, f
test
= 1
MHz)
C
ob
-
600
pF
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 A, T
J
= 25
C)
(i
F
= 1.0 A, T
J
= 150
C)
v
F
1.1
0.93
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 25
C)
(Rated dc Voltage, T
J
= 150
C)
i
R
10
100
m
A
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/
m
s)
t
rr
100
ns
2. Diode Pulse Test: Pulse Width = 300
m
s, Duty Cycle
v
2.0%.
NJL4281D (NPN) NJL4302D (PNP)
http://onsemi.com
4
10
100
1000
0.01
0.1
1
10
100
hFE, DC CURRENT
GAIN
T
J
= 100
C
T
J
= 25
C
Figure 1. DC Current Gain, V
CE
= 5 V,
NPN NJL4281D
I
C
, COLLECTOR CURRENT (A)
10
100
1000
0.01
0.1
1
10
100
hFE, DC CURRENT
GAIN
Figure 2. DC Current Gain, V
CE
= 5 V,
PNP NJL4302D
I
C
, COLLECTOR CURRENT (A)
T
J
= 100
C
T
J
= 25
C
10
100
1000
0.01
0.1
1
10
100
hFE, DC CURRENT
GAIN
Figure 3. DC Current Gain, V
CE
= 20 V,
NPN NJL4281D
I
C
, COLLECTOR CURRENT (A)
T
J
= 100
C
T
J
= 25
C
10
100
1000
0.01
0.1
1
10
100
hFE, DC CURRENT
GAIN
Figure 4. DC Current Gain, V
CE
= 20 V,
PNP NJL4302D
I
C
, COLLECTOR CURRENT (A)
T
J
= 100
C
T
J
= 25
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.01
0.1
1
10
100
Figure 5. Typical Saturation Voltage,
NPN NJL4281D
I
C
, COLLECTOR CURRENT (A)
SA
TURA
TION VOL
T
AGE (V)
T
J
= 25
C
I
c
/I
b
= 10
V
be(sat)
V
ce(sat)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01
0.1
1
10
100
Figure 6. Typical Saturation Voltage,
PNP NJL4302D
I
C
, COLLECTOR CURRENT (A)
SA
TURA
TION VOL
T
AGE (V)
T
J
= 25
C
I
c
/I
b
= 10
V
be(sat)
V
ce(sat)
TYPICAL CHARACTERISTICS
NJL4281D (NPN) NJL4302D (PNP)
http://onsemi.com
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Figure 7. Typical Base-Emitter Voltages,
NPN NJL4281D
I
C
, COLLECTOR CURRENT (A)
V
BE(on)
, BASE-EMITTER VOL
T
AGE
(V)
0.0
0.5
1.0
1.5
2.0
2.5
0.01
0.1
1
10
100
V
BE(on)
, BASE-EMITTER VOL
T
AGE
(V)
I
C
, COLLECTOR CURRENT (A)
Figure 8. Typical Base-Emitter Voltages,
PNP NJL4302D
0
10
20
30
40
50
60
70
0.1
1
10
Figure 9. Typical Current Gain Bandwidth Product,
NPN NJL4281D
I
C
, COLLECTOR CURRENT (A)
fT
, CURRENT
BANDWIDTH PRODUCT
(MHz)
V
CE
= 5 V
T
J
= 25
C
f
test
= 1 MHz
V
CE
= 10 V
0
10
20
30
40
50
60
70
0.1
1
10
T
J
= 25
C
f
test
= 1 MHz
V
CE
= 5 V
V
CE
= 10 V
fT
, CURRENT
BANDWIDTH PRODUCT
(MHz)
Figure 10. Typical Current Gain Bandwidth Product,
PNP NJL4302D
TYPICAL CHARACTERISTICS
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