Semiconductor Components Industries, LLC, 2004
March, 2004 - Rev. 2
1
Publication Order Number:
NTD30N02/D
NTD30N02
Power MOSFET
30 Amps, 24 Volts
N-Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
24
Vdc
Gate-to-Source Voltage - Continuous
V
GS
"
20
Vdc
Drain Current
- Continuous @ T
A
= 25
C
- Single Pulse (t
p
v
10
s)
I
D
I
DM
30
100
Adc
Apk
Total Power Dissipation @ T
A
= 25
C
P
D
75
W
Operating and Storage Temperature Range
T
J
, T
stg
- 55 to
150
C
Single Pulse Drain-to-Source Avalanche
Energy - Starting T
J
= 25
C
(V
DD
= 24 Vdc, V
GS
= 10 Vdc,
L = 1.0 mH, I
L
(pk) = 10 A, R
G
= 25
)
E
AS
50
mJ
Thermal Resistance
- Junction-to-Case
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
R
JC
R
JA
R
JA
1.65
67
120
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
T
L
260
C
1. When surface mounted to an FR4 board using 1
pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
30 AMPERES
24 VOLTS
R
DS(on)
= 11.2 m
W
(Typ.)
N-Channel
D
S
G
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Device
Package
Shipping
ORDERING INFORMATION
NTD30N02
DPAK
75 Units/Rail
DPAK
CASE 369C
(Surface Mount)
Style 2
MARKING
DIAGRAM
D30N02
= Device Code
Y
= Year
WW
= Work Week
NTD30N02T4
DPAK
2500 Tape & Reel
1 2
3
4
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Gate
3
Source
2
Drain
4
Drain
YWW
D30
N02
NTD30N02
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2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
24
-
26.5
25.5
-
-
Vdc
mV/
C
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 24 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 125
C)
I
DSS
-
-
-
-
-
-
0.8
1.0
10
m
Adc
Gate-Body Leakage Current (V
GS
=
20
Vdc, V
DS
= 0 Vdc)
I
GSS
-
-
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
-
2.1
-4.1
3.0
-
Vdc
mV/
C
Static Drain-to-Source On-Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 30 Adc)
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 4.5 Vdc, I
D
= 15 Adc)
R
DS(on)
-
-
-
-
11.2
20
14.5
14.5
24
m
W
Forward Transconductance (Note 3) (V
DS
= 10 Vdc, I
D
= 15 Adc)
g
FS
-
20
-
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
20 Vd
V
0 Vd
C
iss
-
1000
-
pF
Output Capacitance
(V
DS
= 20 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
oss
-
425
-
Transfer Capacitance
f = 1.0 MHz)
C
rss
-
175
-
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t
d(on)
-
7.0
15
ns
Rise Time
(V
DD
= 20 Vdc, I
D
= 30 Adc,
t
r
-
28
55
Turn-Off Delay Time
(V
DD
20 Vdc, I
D
30 Adc,
V
GS
= 10 Vdc, R
G
= 2.5
)
t
d(off)
-
22
35
Fall Time
t
f
-
12
20
Turn-On Delay Time
t
d(on)
-
12.5
-
ns
Rise Time
(V
DD
= 20 Vdc, I
D
= 15 Adc,
t
r
-
115
-
Turn-Off Delay Time
(V
DD
20 Vdc, I
D
15 Adc,
V
GS
= 4.5 Vdc, R
G
= 2.5
)
t
d(off)
-
15
-
Fall Time
t
f
-
17
-
Gate Charge
(V
20 Vd
I
30 Ad
Q
T
-
14.4
20
nC
(V
DS
= 20 Vdc, I
D
= 30 Adc,
V
GS
= 4.5 Vdc) (Note 3)
Q
1
-
4.0
-
V
GS
= 4.5 Vdc) (Note 3)
Q
2
-
8.5
-
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(I
S
= 15 Adc, V
GS
= 0 Vdc)
(I
S
= 30 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 15 Adc, V
GS
= 0 Vdc, T
J
= 125
C)
V
SD
-
-
-
0.95
1.10
0.80
1.2
-
-
Vdc
Reverse Recovery Time
(I
30 Ad
V
0 Vd
t
rr
-
30
-
ns
(I
S
= 30 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/
s) (Note 3)
t
a
-
14.5
-
dI
S
/dt = 100 A/
s) (Note 3)
t
b
-
15.5
-
Reverse Recovery Stored Charge
Q
RR
-
0.013
-
m
C
3. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD30N02
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3
10
40
30
0.03
0.02
0.01
20
50
0.04
0.07
60
1.6
1.2
1.4
1
0.8
0.6
0.01
100
0
8
20
2
1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
2
5
4
0.01
0
3
6
Figure 3. On-Resistance versus
Gate-to-Source Voltage
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (
)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (
)
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6. Drain-to-Source Leakage Current
versus Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
60
-50
50
25
0
-25
75
125
100
1
8
4
16
12
24
8
3
10
30
8 V
V
DS
10 V
T
J
= 25
C
T
J
= -55
C
T
J
= 100
C
V
GS
= 10 V
150
V
GS
= 0 V
I
D
= 15 A
V
GS
= 10 V
40
0.02
0.04
V
GS
= 9 V
I
D
= 15 A
T
J
= 25
C
10
T
J
= 150
C
T
J
= 100
C
10
0
60
30
40
4
T
J
= 25
C
20
10
7 V
5 V
4 V
3.4 V
3 V
4
5
6
7
2
3
5
0.03
7
8
0.05
0.06
50
3.6 V
4.2 V
4.6 V
5.4 V
6 V
T
J
= 25
C
6
7
20
50
9
V
GS
= 4.5 V
1
0.1
NTD30N02
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4
C, CAP
ACIT
ANCE (pF)
C
rss
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
2500
0
V
GS
V
DS
1000
500
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
C
C
iss
C
oss
C
rss
C
iss
1500
2000
10
5
0
5
10
15
20
25
Figure 8. Gate-to-Source and Drain-to-Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
R
G
, GATE RESISTANCE (
)
1
10
100
1000
1
0
4
1
0
Q
G
, TOTAL GATE CHARGE (nC)
5
3
2
12
100
4
8
I
D
= 30 A
V
DS
= 20 V
V
GS
= 4.5 V
T
J
= 25
C
V
DS
Q
2
Q
1
Q
T
t
r
t
d(off)
t
d(on)
t
f
10
V
DS
= 20 V
I
D
= 30 A
V
GS
= 10 V
16
0
4
8
12
16
20
V
GS
, GA
TE-T
O-SOURCE VOL
T
AGE (VOL
TS)
t, TIME (ns)
V
GS
V
DS
, DRAIN-T
O-SOURCE VOL
T
AGE (VOL
TS)
I
S
, SOURCE CURRENT (AMPS)
15
0
0.3
DRAIN-TO-SOURCE DIODE CHARACTERISTICS
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
V
GS
= 0 V
T
J
= 25
C
Figure 10. Diode Forward Voltage versus Current
0.5
0.7
1.2
3
6
9
0.9
1.1
12
1
0.8
0.6
0.4
NTD30N02
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5
PACKAGE DIMENSIONS
DPAK
CASE 369C-01
ISSUE O
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
-T-
SEATING
PLANE
Z
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.245
5.97
6.22
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.018
0.023
0.46
0.58
F
0.037
0.045
0.94
1.14
G
0.180 BSC
4.58 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.102
0.114
2.60
2.89
L
0.090 BSC
2.29 BSC
R
0.180
0.215
4.57
5.45
S
0.025
0.040
0.63
1.01
U
0.020
---
0.51
---
V
0.035
0.050
0.89
1.27
Z
0.155
---
3.93
---
1
2
3
4
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NTD30N02
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6
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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Phone: 81-3-5773-3850
NTD30N02/D
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