1
Transistor
2SC4755
Silicon NPN epitaxial planer type
For high speed switching
s
Features
q
High-speed switching.
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC70
3:Collector
SMini Type Package
2.1
0.1
1.3
0.1
0.9
0.1
0.7
0.1
0.3
+0.1
0
0.15
+0.1
0.05
2.0
0.2
1.25
0.1
0.425
0.425
1
3
2
0.65
0.2
0.65
0 to 0.1
0.2
0.1
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
25
20
5
300
200
150
150
55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
Symbol
I
CBO
I
EBO
h
FE
*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= 10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
Refer to the measurment circuit
min
40
200
typ
0.17
0.76
500
2
17
15
7
max
0.1
0.1
200
0.25
1.0
4
Unit
A
A
V
V
MHz
pF
ns
ns
ns
Marking symbol :
DV
*
h
FE
Rank classification
Rank
P
Q
R
h
FE
40 ~ 80
60 ~ 120
90 ~ 200
Marking Symbol
DVP
DVQ
DVR
2
Transistor
2SC4755
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
1.2
1.0
0.8
0.2
0.6
0.4
0
120
100
80
60
40
20
Ta=25C
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
I
B
=3.0mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25C
25C
75C
Collector current I
C
(mA)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
240
200
160
120
80
40
V
CE
=1V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
1
10
100
1000
3
30
300
0
1200
1000
800
600
400
200
V
CB
=10V
Ta=25C
f=200MHz
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
6
5
4
3
2
1
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
Switching time measurement circuit
t
on
, t
off
Test Circuit
t
stg
Test Circuit
220
3.3k
0.1
F
3.3k
50
V
CC
=3V
V
out
50
V
in
=10V
V
bb
=
3V
V
in
V
in
V
out
t
on
t
off
V
out
10%
10%
90%
90%
0.1
F
0.1
F
A
V
out
V
in
=10V
V
bb
=2V
90
V
CC
=10V
500
50
910
500
1k
0
V
in
t
stg
V
out
10%
10%
(Waveform at A)
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