1
Power Transistors
2SC5393
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s
Features
q
High-speed switching
q
High collector to base voltage V
CBO
q
Wide area of safe operation (ASO)
q
Satisfactory linearity of foward current transfer ratio h
FE
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
600
600
400
7
10
5
1
40
2
150
55 to +150
Unit
V
V
V
V
A
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 600V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 1.5A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 2A, I
B1
= 0.4A, I
B2
= 0.8A,
V
CC
= 150V
min
10
8
typ
30
max
100
100
60
1
2
2.0
0.3
Unit
A
A
V
V
MHz
s
s
T
C
=25
C
Ta=25
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
2
Power Transistors
2SC5393
P
C
-- Ta
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) With a 50
50
2mm
Al heat sink
(4) Without heat sink
(2)
(3)
(4)
(1)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
1
10
100
1000
3
30
300
0.001
0.01
0.1
1
100
10
10ms
1ms
t=500
s
1s
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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