Optoisolators (Photocouplers)
1
Publication date: May 2002
SHF00007AED
CNC7H001
Optoisolator
I Features
Housed in a surface mount package alternative to mini-flat package
of 1.27 mm pitch
Double molded package
2.5 kV isolation voltage
UL approved (File No. E79920)
I Applications
Suited for interface circuits requiring high density mounting of
parts, especially hybrid ICs and programmable controllers
Signal transfer between circuits with different potentials and with
impedances
I Absolute Maximum Ratings T
a
= 25C
16
15 14
13 12
11 10
9
1
2
3
4
5
6
7
8
Top View
4.4
7.0
0.3
2.0
0.1
0.1
10.3
0.3
1.27
0.4
9
8
1
16
0.5
0.3
0.15
+0.10 -
0.05
(1.3)
Note) *1: Pulse repetition rate
= 100 pps. Pulse wide 100 s
*2: Above 25
C ambient temperature, derate dissipation at the rate of 0.75 mW/C.
*3: Above 25
C ambient temperature, derate dissipation at the rate of 1.2 mW/C.
*4: AC voltage (t
= 1.0 min., RH < 60%)
Parameter
Symbol
Rating
Unit
Input (light
Forward current (DC)
I
F
50
mA
emitting diode) Pulse forward current
*1
I
FP
1
A
Power dissipation
*2
P
D
75
mW/ch
Output (photo Collector current
I
C
50
mA
transistor)
Collector-emitter voltage
V
CEO
80
V
Emitter-collector voltage
V
ECO
7
V
Collector power dissipation
*3
P
C
120
mW/ch
Isolation voltage, input to output
*4
V
ISO
2 500
V[rms]
Operating ambient temperature
T
opr
-30 to +100
C
Storage temperature
T
stg
-55 to +125
C
Unit: mm
Pin Connection
1, 3, 5, 7
: Anode/Cathode
2, 4, 6, 8
: Cathode/Anode
9, 11, 13, 15 : Emitter
10, 12, 14, 16: Collector
PCTFG116-001 Package
CNC7H001
2
SHF00007AED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Input
Forward voltage
V
F
I
F
= 50 mA
1.35
1.5
V
diode
Capacitance
C
t
V
R
= 0 V, f = 1 MHz
15
pF
Output
Collector-emitter dark current
I
CEO
V
CE
= 20 V
5
100
nA
transistor Collector-emitter voltage
V
CEO
I
C
= 100 A
80
V
Emitter-collector voltage
V
ECO
I
E
= 10 A
7
V
Collector capacitance
C
C
V
CE
= 10 V, f = 1 MHz
10
pF
Coupled
Current transfer ratio
*1
CTR
V
CE
= 5 V, I
F
= 5 mA
100
600
%
Capacitance
C
ISO
f
= 1 MHz
0.6
pF
Resistance
R
ISO
V
ISO
= 500 V
10
11
Rise time
*2
t
r
V
CC
= 10 V, I
C
= 2 mA
4
s
Fall time
*3
t
f
R
L
= 100
3
Saturation voltage
V
CE(sat)
I
F
= 20 mA, I
C
= 1 mA
0.1
0.2
V
Collector current ratio
*4
I
C(Ratio)
V
CE
= 5 V, I
F
= 5 mA
0.33
1
3.0
I Electrical Characteristics T
a
= 25C 3C
Note) *1: CTR
= I
C
/ I
F
100%
*2: Rise time is defined as the time required for the collector current to rise from 10% to 90% of peak value.
*3: Fall time is defined as the time required for the collector current to decrease from 90% to 10% of peak value.
*4:
I
C(Ratio)
=
I
C2
(I
F
= I
F2
, V
CE
= 5 V)
I
C1
(I
F
= I
F1
, V
CE
= 5 V)
Input and output are practiced by electricity.
The device is designed be disregarded radiation.
P
C
, P
D
T
a
I
F
V
F
I
C
I
F
Ambient temperature T
a
(
C)
Collector power dissipation , power dissipation
P
C
, P
D
(mW)
160
120
80
40
0
0
20
40
60
80
120
100
-20
P
C
P
D
60
40
50
30
20
10
0
T
a
= 25C
Forward voltage V
F
(V)
Forward current I
F
(mA)
0.4
1.6
1.2
2.4
2.0
0.8
0
Forward current I
F
(mA)
Collector current I
C
(mA)
10
2
10
1
10
-1
10
-2
10
-1
1
10
10
2
V
CC
= 5 V
T
a
= 25C
Caution for Safety
DANGER
2002 MAY
Request for your special attention and precautions in using the technical information
and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this book and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this book is limited to showing representative characteristics
and applied circuits examples of the products. It neither warrants non-infringement of intellectual
property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this book.
(4) The products described in this book are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this book are subject to change without no-
tice for modification and/or improvement. At the final stage of your design, purchasing, or use of the
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum
rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
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permission of Matsushita Electric Industrial Co., Ltd.
IGallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemi-
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material in powder or vapor form is harmful to human
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Observe the relevant laws and regulations when
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