1
Transmissive Photosensors (Photo Interrupters)
10.0
0.3
(15.5)
(2.54)
2-C0.5
19.0
0.35
A
A'
SEC. A-A'
Pin connection
Unit : mm
2-0.45
2
3
1
4
6.2
0.25
14.0
0.2
3.0 min.
3.0
0.2
(2.0)
2
3
1
4
(Note) ( ) Dimension is reference
,,
,
,
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
CNZ1120
Photo Interrupter
For contactless SW, object detection
Features
Wide gap between emitting and detecting elements, suitable for
thick plate detection Gap : 10mm
Fast response : t
r
, t
f
= 6
s (typ.)
The external case is molded using visible light cutoff resin. The
case has no openings, so the photosensor is not easily susceptible
to output attenuation resulting from dust or particles
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol Ratings
Unit
Input (Light
Reverse voltage (DC)
V
R
3
V
emitting diode)
Forward current (DC)
I
F
50
mA
Power dissipation
P
D
*1
75
mW
Collector current
I
C
20
mA
Output (Photo Collector to emitter voltage
V
CEO
20
V
transistor)
Emitter to collector voltage
V
ECO
5
V
Collector power dissipation
P
C
*2
100
mW
Temperature
Operating ambient temperature
T
opr
5 to +60
C
Storage temperature
T
stg
15 to +65
C
Electrical Characteristics
(Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Input
Forward voltage (DC)
V
F
I
F
= 50mA
1.2
1.5
V
characteristics Reverse current (DC)
I
R
V
R
= 3V
10
A
Output
Collector cutoff current
I
CEO
V
CE
= 10V, I
F
= 0mA, I
D
= 0mA
*1
200
nA
characteristics Collector to emitter capacitance
C
C
V
CE
= 10V, f = 1MHz
5
pF
Transfer
Collector current
I
C
V
CE
= 10V, I
F
= 20mA, R
L
= 100
1.0
mA
characteristics
Response time
t
r
, t
f
*2
V
CC
= 10V, I
C
= 1mA, R
L
= 100
6
s
Collector to emitter saturation voltage V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
0.4
V
*1
I
D
: Leakage current due to scattered light
*2
Switching time measurement circuit
Overview
CNZ1120 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
*1
Input power derating ratio is
1.0 mW/C at Ta
25C.
*2
Output power derating ratio is
1.33 mW/C at Ta
25C.
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