1
PNA1801L (PN168)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Small size, high output power, low cost
3 plastic package
Phototransistors
1: Emitter
2: Collector
3.0
0.2
3.8
0.2
2-0.8 max.
2-0.5
0.1
0.5
0.1
2.54
5.0
0.2
1.7
15.0
1.0
4.5
0.3
0.6
1.0
(1.5)
1
2
Not soldered 2.0 max.
Unit : mm
;;
;;
;
;
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
Ratings
Unit
Collector to emitter voltage
V
CEO
30
V
Emitter to collector voltage
V
ECO
5
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
100
mW
Operating ambient temperature
T
opr
25 to +85
C
Storage temperature
T
stg
30 to +100
C
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Dark current
I
CEO
V
CE
= 10V
0.005
0.5
A
Collector photo current
I
CE(L)
V
CE
= 10V, L = 500 lx
*1
0.8
3
mA
Peak sensitivity wavelength
P
V
CE
= 10V
800
nm
Acceptance half angle
Measured from the optical axis to the half power point
35
deg.
Response time
t
r
, t
f
*2
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100
4
s
Collector saturation voltage
V
CE(sat)
I
CE(L)
= 1mA, L = 1000 lx
*1
0.2
0.5
V
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Note) The part number in the parenthesis shows conventional part number.
2
Phototransistors
PNA1801L
t
r
-- I
CE(L)
Collector photo current I
CE(L)
(mA)
Rise time t
r
(
s)
Ta = 25C
10
4
10
3
10
2
10
1
10
1
10
1
10
10
2
1
10
2
t
f
-- I
CE(L)
Collector photo current I
CE(L)
(mA)
Fall time t
f
(
s)
Ta = 25C
10
4
10
3
10
2
10
1
10
1
10
1
10
10
2
1
10
2
P
C
-- Ta
120
100
80
60
40
20
Ambient temperature Ta (C )
Collector power dissipation P
C
(mW)
0
20
40
60
80
100
0
20
Ta = 25C
T = 2856K
I
CE(L)
-- V
CE
20
16
12
4
8
0
Collector to emitter voltage V
CE
(V)
Collector photo current I
CE(L)
(mA)
0
20
16
8
12
4
24
Spectral sensitivity characteristics
100
80
60
40
20
Wavelength
(nm)
Relative sensitivity S (%)
400
600
800
1000
1200
0
200
V
CE
= 10V
Ta = 25C
I
CE(L)
-- L
Illuminance L (lx)
Collector photo current I
CE(L)
(mA)
V
CE
= 10V
Ta = 25C
T = 2856K
10
3
10
2
10
1
10
1
10
10
3
10
4
10
2
10
2
1
I
CEO
-- Ta
10
3
10
1
10
2
Ambient temperature Ta (C )
V
CE
= 10V
Dark current I
CEO
(nA)
10
1
40
0
40
80
120
V
CE
= 10V
T = 2856K
I
CE(L)
-- Ta
10
2
1
10
Ambient temperature Ta (C )
40
0
40
80
120
10
1
Collector photo current I
CE(L)
(mA)
0
10
20
30
40
50
60
70
80
90
Directivity characteristics
20
90
100
80
70
60
50
40
30
Relative sensitivity S (%)
750 lx
500 lx
L = 2000 lx
1000 lx
1500 lx
1750 lx
1250 lx
100 lx
250 lx
L = 1000 lx
500 lx
R
L
= 1k
500
100
R
L
= 1k
500
100
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2001 MAR
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