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Электронный компонент: BAS70L

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DATA SHEET
Product specification
2003 May 20
DISCRETE SEMICONDUCTORS
BAS70L
Schottky barrier diode
M3D891
BOTTOM VIEW
2003 May 20
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAS70L
FEATURES
Low diode capacitance
Low forward voltage
Guard ring protected
High breakdown voltage
Leadless ultra small plastic package
(1 mm
0.6 mm
0.5 mm)
Boardspace 1.17 mm
2
(approx. 10% of SOT23)
Power dissipation comparable to SOT23.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Mobile communication, digital (still) cameras, PDAs and
PCMCIA cards.
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring
for stress protection. Encapsulated in a SOD882 leadless
ultra small plastic package.
handbook, halfpage
MDB391
Bottom view
Fig.1 Simplified outline (SOD882) and symbol.
Marking code: S5.
The marking bar indicates the cathode.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
70
V
I
F
continuous forward current
-
70
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
70
mA
I
FSM
non-repetitive peak forward current
t
p
< 10 ms
-
100
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
2003 May 20
3
Philips Semiconductors
Product specification
Schottky barrier diode
BAS70L
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: pulse width = 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60
m copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
see Fig.2
I
F
= 1 mA
410
mV
I
F
= 10 mA
750
mV
I
F
= 15 mA
1
V
I
R
continuous reverse current
V
R
= 50 V; see Fig.3; note 1
100
A
V
R
= 70 V; see Fig.3; note 1
10
A
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.5
2
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
2003 May 20
4
Philips Semiconductors
Product specification
Schottky barrier diode
BAS70L
GRAPHICAL DATA
10
0
0.2
0.4
0.6
0.8
1
1
I F
(mA)
V (V)
F
MRA803
(1)
(4)
(2)
(3)
10
2
10
1
10
2
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
(4) T
amb
=
-
40
C.
MRA805
1
10
10
0
20
40
60
80
V (V)
R
IR
(
A)
(1)
(3)
(2)
2
10
1
10
2
10
3
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
10
1
1
10
rdiff
IF (mA)
MRA802
10
-
1
10
2
10
2
10
3
Fig.4
Differential forward resistance as a function
of forward current; typical values.
f = 10 kHz.
0
0.5
1
1.5
2
0
20
40
60
80
MRA804
Cd
(pF)
V (V)
R
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
2003 May 20
5
Philips Semiconductors
Product specification
Schottky barrier diode
BAS70L
PACKAGE OUTLINE
UNIT
A
1
max.
A
(1)
b
e
1
L
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
0.50
0.46
0.55
0.47
0.03
0.62
0.55
0.65
DIMENSIONS (mm are the original dimensions)
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
0.30
0.22
SOD882
03-04-16
03-04-17
D
E
1.02
0.95
L
E
(2)
2
1
b
A1
A
D
L
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
SOD882
0
0.5
1 mm
scale
e1