DATA SHEET
Product specification
Supersedes data of 1997 Mar 27
1999 Apr 15
DISCRETE SEMICONDUCTORS
BC556; BC557
PNP general purpose transistors
book, halfpage
M3D186
1999 Apr 15
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BC546 and BC547.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM281
3
2
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC556
-
-
80
V
BC557
-
-
50
V
V
CEO
collector-emitter voltage
open base
BC556
-
-
65
V
BC557
-
-
45
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C
-
500
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 15
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. V
BEsat
decreases by about
-
1.7 mV/K with increasing temperature.
2. V
BE
decreases by about
-
2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
1
-
15
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 150
C
-
-
-
4
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
-
100
nA
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
5 V;
see Figs 2, 3 and 4
BC556
125
-
475
BC557
125
-
800
BC556A
125
-
250
BC556B; BC557B
220
-
475
BC557C
420
-
800
V
CEsat
collector-emitter saturation
voltage
I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
60
-
300
mV
I
C
=
-
100 mA; I
B
=
-
5 mA
-
-
180
-
650
mV
V
BEsat
base-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
0.5 mA; note 1
-
-
750
-
mV
I
C
=
-
100 mA; I
B
=
-
5 mA; note 1
-
-
930
-
mV
V
BE
base-emitter voltage
I
C
=
-
2 mA; V
CE
=
-
5 V; note 2
-
600
-
650
-
750
mV
I
C
=
-
10 mA; V
CE
=
-
5 V; note 2
-
-
-
820
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
3
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
=
-
0.5 V; f = 1 MHz
-
10
-
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V; f = 100 MHz 100
-
-
MHz
F
noise figure
I
C
=
-
200
A; V
CE
=
-
5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
-
2
10
dB
1999 Apr 15
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
300
100
200
MBH726
-
10
-
1
hFE
-
1
IC (mA)
-
10
-
10
3
-
10
2
VCE =
-
5 V
BC556A.
Fig.3 DC current gain; typical values.
handbook, full pagewidth
0
300
200
100
400
MBH727
-
10
-
2
-
10
-
1
hFE
-
1
IC (mA)
-
10
-
10
3
-
10
2
VCE =
-
5 V
BC556B; BC557B.
1999 Apr 15
5
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557
Fig.4 DC current gain; typical values.
handbook, full pagewidth
0
300
200
100
600
500
400
MBH728
-
10
-
2
-
10
-
1
hFE
-
1
IC (mA)
-
10
-
10
3
-
10
2
VCE =
-
5 V
BC557C.
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