Document Outline
- FEATURES
- PINNING
- APPLICATIONS
- DESCRIPTION
- MARKING
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
Supersedes data of 2001 Aug 30
2001 Nov 07
DISCRETE SEMICONDUCTORS
BC847BVN
NPN/PNP general purpose
transistor
M3D744
2001 Nov 07
2
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
FEATURES
300 mW total power dissipation
Very small 1.6 mm x 1.2 mm ultra thin package
Excellent coplanarity due to straight leads
Replaces two SC-75/SC-89 packaged transistors on
same PCB area
Reduced required PCB area
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification
Switch mode power supply complementary MOSFET
driver
Complementary driver for audio amplifiers.
DESCRIPTION
NPN/PNP transistor pair in a SOT666 plastic package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BC847BVN
13
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
handbook, halfpage
MAM443
1
3
2
TR1
TR2
6
4
5
1
2
3
4
6
5
Top view
Fig.1
Simplified outline (SOT666) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
collector-base voltage
open emitter
-
50
V
V
CEO
collector-emitter voltage
open base
-
45
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
Per device
P
tot
total power dissipation
T
amb
25
C; note 1
-
300
mW
2001 Nov 07
3
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
notes 1 and 2
416
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off current
V
CB
= 30 V; I
E
= 0
-
-
15
nA
V
CB
= 30 V; I
E
= 0; T
j
= 150
C
-
-
5
A
I
EBO
emitter-base cut-off current
V
EB
= 5 V; I
C
= 0
-
-
100
nA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 2 mA
200
-
450
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
-
100
mV
I
C
= 100 mA; I
B
= 5 mA; note 1
-
-
300
mV
V
BEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
755
-
mV
f
T
transition frequency
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
100
-
-
MHz
NPN transistor
V
BE
base-emitter turn-on voltage
V
CE
= 5 V; I
C
= 2 mA
580
655
700
mV
C
c
collector capacitance
V
CB
= 10 V; I
E
= I
e
= 0; f = 1MHz
-
-
1.5
pF
C
e
emitter capacitance
V
EB
= 500 mV; I
C
= I
c
= 0; f = 1MHz
-
11
-
pF
PNP transistor
V
BE
base-emitter turn-on voltage
V
CE
=
-
5 V; I
C
=
-
2 mA
600
655
750
mV
C
c
collector capacitance
V
CB
=
-
10 V; I
C
= I
c
= 0; f = 1MHz
-
-
2.2
pF
C
e
emitter capacitance
V
EB
=
-
500 mV; I
E
= I
e
= 0; f = 1MHz
-
10
-
pF
2001 Nov 07
4
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
handbook, halfpage
0
400
600
200
MLD703
10
-
1
1
10
IC (mA)
hFE
10
2
10
3
(1)
(3)
(2)
Fig.2
DC current gain as a function of collector
current: typical values.
TR1 (NPN); V
CE
= 5 V.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
200
1200
400
600
800
1000
MLD704
10
-
2
10
-
1
1
IC (mA)
VBE
mV
10
10
2
10
3
(3)
(2)
(1)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
TR1 (NPN); V
CE
= 5 V.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 150
C.
handbook, halfpage
10
4
10
3
10
2
10
MLD705
10
-
1
1
10
IC (mA)
VCEsat
(mV)
10
2
10
3
(2)
(1)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current: typical values.
TR1 (NPN); I
C
/I
B
= 20.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
200
1200
400
600
800
1000
MLD706
1
10
-
1
IC (mA)
VBEsat
(mV)
10
10
2
10
3
(1)
(3)
(2)
Fig.5
Base-emitter saturation voltage as a
function of collector current.
TR1 (NPN); I
C
/I
B
= 20.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 150
C.
2001 Nov 07
5
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
handbook, halfpage
0
1000
200
400
600
800
MLD699
-
10
-
2
-
10
-
1
(1)
-
1
IC (mA)
hFE
-
10
-
10
2
-
10
3
(2)
(3)
Fig.6
DC current gain as a function of collector
current: typical values.
TR2 (PNP); V
CE
=
-
5 V.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
-
200
-
1200
-
400
-
600
-
800
-
1000
MLD700
-
10
-
2
-
10
-
1
(1)
-
1
IC (mA)
VBE
mV
-
10
-
10
2
-
10
3
(3)
(2)
Fig.7
Base-emitter voltage as a function of
collector current; typical values.
TR2 (PNP); V
CE
=
-
5 V.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 150
C.
handbook, halfpage
-
10
4
-
10
3
-
10
2
-
10
MLD701
-
10
-
1
-
1
-
10
IC (mA)
VCEsat
(mV)
-
10
2
-
10
3
(1)
(2)
(3)
Fig.8
Collector-emitter saturation voltage as a
function of collector current: typical values.
TR2 (PNP); I
C
/I
B
= 20.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
-
200
-
1200
-
400
-
600
-
800
-
1000
MLD702
-
1
-
10
-
1
IC (mA)
VBEsat
(mV)
-
10
-
10
2
-
10
3
(1)
(3)
(2)
Fig.9
Base-emitter saturation voltage as a
function of collector current.
TR2 (PNP); I
C
/I
B
= 20.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 150
C.
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