DATA SHEET
Preliminary specification
Supersedes data of 1998 Nov 10
1999 May 18
DISCRETE SEMICONDUCTORS
BC846F; BC847F; BC848F series
NPN general purpose transistors
M3D425
1999 May 18
2
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846F; BC847F; BC848F series
FEATURES
Power dissipation comparable to SOT23
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification, especially
in portable equipment.
DESCRIPTION
NPN transistor encapsulated in an ultra small SC-89
(SOT490) plastic SMD package.
PNP complements: BC856F, BC857F and BC858F series.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC846AF
1A
BC847CF
1G
BC846BF
1B
BC848AF
1J
BC847AF
1E
BC848BF
1K
BC847BF
1F
BC848CF
1L
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SC-89; SOT490) and
symbol.
handbook, halfpage
MAM410
1
2
3
1
2
Top view
3
1999 May 18
3
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846F; BC847F; BC848F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC846AF; BC846BF
-
80
V
BC847AF; BC847BF; BC847CF
-
50
V
BC848AF; BC848BF; BC848CF
-
30
V
V
CEO
collector-emitter voltage
open base
BC846AF; BC846BF
-
65
V
BC847AF; BC847BF; BC847CF
-
45
V
BC848AF; BC848BF; BC848CF
-
30
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
I
BM
peak base current
-
100
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 May 18
4
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846F; BC847F; BC848F series
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air; note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
-
15
nA
I
E
= 0; V
CB
= 30 V; T
j
= 150
C
-
5
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
100
nA
h
FE
DC current gain
I
C
= 2 mA; V
CE
= 5 V
BC846AF; BC847AF; BC848AF
110
220
BC846BF; BC847BF; BC848BF
200
450
BC847CF; BC848CF
420
800
V
CEsat
collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
200
mV
I
C
= 100 mA; I
B
= 5 mA; note 1
-
400
mV
V
BE
base-emitter voltage
I
C
= 2 mA; V
CE
= 5 V
580
700
mV
I
C
= 10 mA; V
CE
= 5 V
-
770
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
1.5
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
100
-
MHz
F
noise figure
I
C
= 200
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
-
10
dB
1999 May 18
5
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846F; BC847F; BC848F series
PACKAGE OUTLINE
UNIT
b
p
c
D
E
e
1
H
E
L
p
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
IEC
JEDEC
EIAJ
mm
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
0.5
e
1.0
1.7
1.5
0.1
0.1
DIMENSIONS (mm are the original dimensions)
0.5
0.3
SOT490
SC-89
bp
D
e1
e
A
Lp
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
0.8
0.6
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT490
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