Document Outline
- FEATURES
- PINNING
- APPLICATIONS
- DESCRIPTION
- MARKING
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
Supersedes data of 2001 Sep 10
2001 Nov 07
DISCRETE SEMICONDUCTORS
BC857BV
PNP general purpose double
transistor
M3D744
2001 Nov 07
2
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BV
FEATURES
300 mW total power dissipation
Very small 1.6 mm
1.2 mm
0.55 mm ultra thin
package
Excellent coplanarity due to straight leads
Improved thermal behaviour due to flat leads
Reduces number of components as replacement of two
SC-75/SC-89 packaged BISS transistors
Reduces required board space
Reduces pick and place costs.
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP double transistor in a SOT666 plastic package.
NPN complement: BC847BV.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BC857BV
3F
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
MAM450
1
3
2
TR1
TR2
6
4
5
1
2
3
4
6
5
Top view
Fig.1 Simplified outline (SOT666) and symbol.
2001 Nov 07
3
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
V
CBO
collector-base voltage
open emitter
-
-
50
V
V
CEO
collector-emitter voltage
open base
-
-
45
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
Per device
P
tot
total power dissipation
T
amb
25
C; note 1
-
300
mW
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
notes 1 and 2
416
K/W
2001 Nov 07
4
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BV
CHARACTERISTICS
T
amb
= 25
C; unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
I
CBO
collector-base cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
-
15
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 150
C
-
-
-
5
A
I
EBO
emitter-base cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
-
100
nA
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
5 V
200
-
450
V
BE
base-emitter voltage
I
C
=
-
2 mA; V
CE
=
-
5 V
-
600
-
655
-
750
mV
V
CEsat
collector-emitter saturation voltage I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
-
100
mV
I
C
=
-
100 mA; I
B
=
-
5. mA; note 1
-
-
-
400
mV
V
BEsat
base-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
755
-
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
-
2.2
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
=
-
500 mV;
f = 1 MHz
-
10
-
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V;
f = 100 MHz
100
-
-
MHz
2001 Nov 07
5
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BV
Graphical information BC857BV
handbook, halfpage
0
1000
200
400
600
800
MHB975
-
10
-
2
-
10
-
1
1
10
IC (mA)
hFE
10
2
10
3
(1)
(2)
(3)
Fig.2 DC current gain; typical values.
V
CE
=
-
5 V.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
-
0
-
1200
-
1000
-
400
-
200
-
800
-
600
MHB976
-
10
-
2
-
10
-
1
-
1
-
10
VBE
(mV)
IC (mA)
-
10
2
-
10
3
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
V
CE
=
-
5 V.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 150
C.
handbook, halfpage
-
10
4
-
10
3
-
10
2
-
10
MHB977
-
10
-
1
-
1
-
10
VCEsat
(mV)
IC (mA)
-
10
2
-
10
3
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
0
-
1200
-
1000
-
400
-
200
-
800
-
600
MHB978
-
10
-
1
-
1
-
10
VBEsat
(mV)
IC (mA)
-
10
2
-
10
3
(1)
(2)
(3)
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
20.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 150
C.
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