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Электронный компонент: BFG67/X

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DATA SHEET
Product specification
Supersedes data of September 1995
1998 Oct 02
DISCRETE SEMICONDUCTORS
BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
MARKING
TYPE NUMBER
CODE
BFG67 (Fig.1)
V3
BFG67/X (Fig.1)
V12
BFG67/XR (Fig.2)
V26
PINNING
PIN
DESCRIPTION
BFG67
BFG67/X
BFG67/XR
1
collector
collector
collector
2
base
emitter
emitter
3
emitter
base
base
4
emitter
emitter
emitter
Fig.1
Simplified outline
SOT143B.
handbook, 2 columns
Top view
MSB014
1
2
3
4
Fig.2
Simplified outline
SOT143R.
handbook, 2 columns
Top view
MSB035
1
2
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CEO
collector-emitter voltage
open base
-
10
V
I
C
collector current (DC)
-
50
mA
P
tot
total power dissipation
T
s
65
C
-
300
mW
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 8 V; f = 1 MHz
0.5
-
pF
f
T
transition frequency
I
C
= 15 mA; V
CE
= 8 V; f = 500 MHz
8
-
GHz
G
UM
maximum unilateral power
gain
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
17
-
dB
F
noise figure
s
=
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
1.3
-
dB
s
=
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 2 GHz
2.2
-
dB
1998 Oct 02
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
10
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
collector current (DC)
-
50
mA
P
tot
total power dissipation
T
s
65
C; see Fig.3; note 1
-
380
mW
T
stg
storage temperature range
-
65
150
C
T
j
junction temperature
-
175
C
Fig.3 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
MBC984 - 1
150
P
tot
(mW)
T
s
(
o
C)
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
note 1
290
K/W
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector leakage current
V
CB
= 5 V; I
E
= 0
-
-
50
nA
h
FE
DC current gain
I
C
= 15 mA; V
CE
= 5 V
60
100
-
f
T
transition frequency
I
C
= 15 mA; V
CE
= 8 V; f = 500 MHz
-
8
-
GHz
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
-
0.7
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
1.3
-
pF
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 8 V; f = 1 MHz
-
0.5
-
pF
G
UM
maximum unilateral power
gain; note 1
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
-
17
-
dB
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 2 GHz
-
10
-
dB
F
noise figure
s
=
opt
; I
C
= 5 mA; V
CE
= 8 V
T
amb
= 25
C; f = 1 GHz
-
1.3
-
dB
s
=
opt
; I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
-
1.7
-
dB
I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 2 GHz; Z
S
= 60
-
2.5
-
dB
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 2 GHz; Z
S
= 60
-
3
-
dB
G
UM
10
S
21
2
1
S
11
2
(
)
1
S
22
2
(
)
-------------------------------------------------------------- dB.
log
=
1998 Oct 02
5
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
Fig.4
DC current gain as a function of collector
current.
V
CE
= 5 V.
handbook, halfpage
0
120
80
40
0
20
40
MBB301
60
I (mA)
C
FE
h
Fig.5
Feedback capacitance as a function of
collector-base voltage.
I
C
= i
c
= 0; f = 1 MHz.
handbook, halfpage
0
0.8
0.6
0.4
0.2
4
MBB302
8
12
16
Cre
(pF)
VCB (V)
0
Fig.6
Transition frequency as a function of
collector current.
V
CE
= 8 V; T
amb
= 25
; f = 2 GHz.
handbook, halfpage
0
10
20
40
8
6
2
0
4
MBB303
30
I (mA)
C
(GHz)
T
f
10
Fig.7 Gain as a function of collector current.
V
CE
= 8 V; f = 1 GHz.
G
UM
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
handbook, halfpage
gain
(dB)
IC (mA)
0
20
15
10
0
10
20
40
MBB304
30
25
5
MSG
G UM
max
G
1998 Oct 02
6
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
Fig.8 Gain as a function of frequency.
V
CE
= 8 V; I
C
= 5 mA.
G
UM
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
handbook, halfpage
50
0
10
MBB305
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G UM
MSG
G max
Fig.9 Gain as a function of frequency.
V
CE
= 8 V; I
C
= 15 mA.
G
UM
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
handbook, halfpage
50
0
10
MBB306
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G UM
MSG
G max
Fig.10 Gain as a function of frequency.
V
CE
= 8 V; I
C
= 30 mA.
G
UM
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
handbook, halfpage
50
0
10
MBB307
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G UM
MSG
G max
Fig.11 Minimum noise figure as a function of
collector current.
V
CE
= 8 V.
handbook, halfpage
4
2
1
0
100
MBB308
10
1
3
F
(dB)
I (mA)
C
f = 2 GHz
1 GHz
900 MHz
500 MHz
1998 Oct 02
7
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
Fig.12 Minimum noise figure as a function of
frequency.
V
CE
= 8 V.
handbook, halfpage
4
2
1
0
MBB309
3
F
(dB)
f (MHz)
10
4
10
3
10
2
5 mA
I = 30 mA
C
15 mA
BFG67/X
Noise Parameters
f
(MHz)
V
CE
(V)
I
C
(mA)
500
8
5
F
min
(dB)
Gamma (opt)
R
n
/50
(mag)
(ang)
0.95
0.455
33.8
0.288
Fig.13 Noise circle figure.
Z
O
= 50
.
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+
j
-
j
MBB317
stability
circle
unstable region
Fmin=0.95 dB
OPT
1
0.2
10
5
2
0.5
1.5 dB
2 dB
3 dB
1998 Oct 02
8
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
BFG67/X
Noise Parameters
f
(MHz)
V
CE
(V)
I
C
(mA)
1000
8
5
F
min
(dB)
Gamma (opt)
R
n
/50
(mag)
(ang)
1.3
0.375
65.9
0.304
Fig.14 Noise circle figure.
Z
O
= 50
.
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+
j
-
j
MBB316
Fmin
2 dB
stability
circle
unstable
region
=1.3 dB
OPT
0.2
1
10
5
2
0.5
3 dB
4 dB
BFG67/X
Noise Parameters
Average Gain Parameters
f
(MHz)
V
CE
(V)
I
C
(mA)
2000
8
5
F
min
(dB)
Gamma (opt)
R
n
/50
(mag)
(ang)
2.2
0.391
136.5
0.184
G
MAX
(dB)
Gamma (max)
(mag)
(ang)
12
0.839
-
170
Fig.15 Noise circle figure.
Z
O
= 50
.
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
j
MBB315
10
1
5
2
0.2
0.5
3 dB
4 dB
5 dB
OPT
Fmin
=
2.2 dB
Gmax
10 dB
9 dB
8 dB
=
12dB
11 dB
1998 Oct 02
9
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
Fig.16 Common emitter input reflection coefficient (S
11
).
V
CE
= 8 V; I
C
= 15 mA; Z
O
= 50
.
handbook, full pagewidth
MBB314
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+
j
-
j
3 GHz
1
0.2
10
5
2
0.5
40 MHz
handbook, full pagewidth
MBB313
+
-
0
30
60
90
120
150
180
150
120
90
60
30
40
20
3 GHz
40 MHz
50
30
10
Fig.17 Common emitter forward transmission coefficient (S
21
).
V
CE
= 8 V; I
C
= mA; Z
O
= 50
.
1998 Oct 02
10
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
Fig.18 Common emitter reverse transmission coefficient (S
12
).
V
CE
= 8 V; I
C
= 15 mA.
handbook, full pagewidth
handbook, full pagewidth
MBB312
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+
j
-
j
1
0.2
10
5
2
0.5
3 GHz
40 MHz
Fig.19 Common emitter output reflection coefficient (S
22
).
handbook, full pagewidth
MBB311
+
-
0
30
60
90
120
150
180
150
120
90
60
30
3 GHz
0.4
0.2
40 MHz
0.5
0.3
0.1
V
CE
= 8 V; I
C
= 15 mA.
1998 Oct 02
11
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
PACKAGE OUTLINES
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HE
y
w
v
Q
2.5
2.1
0.45
0.15
0.55
0.45
e
1.9
e1
1.7
Lp
0.1
0.1
0.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B
97-02-28
0
1
2 mm
scale
Plastic surface mounted package; 4 leads
SOT143B
D
HE
E
A
B
v
M
A
X
A
A1
Lp
Q
detail X
c
y
w
M
e1
e
B
2
1
3
4
b1
bp
1998 Oct 02
12
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HE
y
w
v
Q
2.5
2.1
0.55
0.25
0.45
0.25
e
1.9
e1
1.7
Lp
0.1
0.1
0.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143R
97-03-10
0
1
2 mm
scale
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
HE
E
A
B
v
M
A
X
A
A1
Lp
Q
detail X
c
y
w
M
e1
e
B
1
2
4
3
b1
bp
1998 Oct 02
13
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1998 Oct 02
14
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
NOTES
1998 Oct 02
15
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
NOTES
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1998
SCA60
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Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Printed in The Netherlands
125104/00/04/pp16
Date of release: 1998 Oct 02
Document order number:
9397 750 04349