1.
Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
1.2 Features
s
Internally matched to 50
s
Wide frequency range (3.3 GHz at 3 dB bandwidth)
s
Flat 22 dB gain (
1 dB up to 2.8 GHz)
s
-
8 dBm output power at 1dB compression point
s
Good linearity for low current (IP3
out
= 2 dBm)
s
Low second harmonic,
-
30 dBc at P
D
=
-
40 dBm
s
Unconditionally stable (K
2).
1.3 Applications
s
LNB IF amplifiers
s
Cable systems
s
ISM
s
General purpose.
1.4 Quick reference data
BGA2715
MMIC wideband amplifier
Rev. 02 -- 24 September 2004
Product data sheet
CAUTION
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
S
DC supply voltage
-
5
6
V
I
S
supply current
-
4.3
-
mA
s
21
2
insertion power gain
f = 1 GHz
-
22
-
dB
NF
noise figure
f = 1 GHz
-
2.6
-
dB
P
L(sat)
saturated load power
f = 1 GHz
-
-
4
-
dBm
9397 750 13291
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 24 September 2004
2 of 14
Philips Semiconductors
BGA2715
MMIC wideband amplifier
2.
Pinning information
3.
Ordering information
4.
Marking
5.
Limiting values
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
1
V
S
2, 5
GND2
3
RF_OUT
4
GND1
6
RF_IN
SOT363
1
3
2
4
5
6
sym052
1
3
2, 5
6
4
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BGA2715
-
plastic surface mounted package; 6 leads
SOT363
Table 4:
Marking
Type number
Marking code
BGA2715
B6-
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
S
DC supply voltage
RF input
AC coupled
-
6
V
I
S
supply current
-
8
mA
P
tot
total power dissipation
T
sp
90
C
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
P
D
maximum drive power
-
-
10
dBm
9397 750 13291
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 24 September 2004
3 of 14
Philips Semiconductors
BGA2715
MMIC wideband amplifier
6.
Thermal characteristics
7.
Characteristics
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
R
th(j-sp)
thermal resistance from junction
to solder point
P
tot
= 200 mW;
T
sp
90
C
300
K/W
Table 7:
Characteristics
V
S
= 5 V; I
S
= 4.3 mA; T
j
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
I
S
supply current
3.5
4.3
5.5
mA
s
21
2
insertion power gain
f = 100 MHz
11
13.3
15
dB
f = 1 GHz
20
21.7
23
dB
f = 1.8 GHz
21
23.2
25
dB
f = 2.2 GHz
21
23.3
25
dB
f = 2.6 GHz
20
22.1
24
dB
f = 3 GHz
18
20.1
22
dB
s
11
2
input return losses
f = 1 GHz
10
12
-
dB
f = 2.2 GHz
8
10
-
dB
s
22
2
output return losses
f = 1 GHz
10
12
-
dB
f = 2.2 GHz
7
8.5
-
dB
s
12
2
isolation
f = 1.6 GHz
53
54
-
dB
f = 2.2 GHz
38
39
-
dB
NF
noise figure
f = 1 GHz
-
2.6
2.8
dB
f = 2.2 GHz
-
3.1
3.3
dB
B
bandwidth
at
s
21
2
-
3 dB below flat gain
at 1 GHz
3
3.3
-
GHz
K
stability factor
f = 1 GHz
-
18
-
f = 2.2 GHz
-
2.3
-
P
L(sat)
saturated load power
f = 1 GHz
-
5
-
4.0
-
dBm
f = 2.2 GHz
-
6
-
5.0
-
dBm
P
L(1dB)
load power
at 1 dB gain compression;
f = 1 GHz
-
9
-
8.0
-
dBm
at 1 dB gain compression;
f = 2.2 GHz
-
10
-
8.5
-
dBm
IM2
second order
intermodulation
product
at P
D
=
-
40 dBm, f
0
= 1 GHz
29
30
-
dBc
IP3
in
input, third order
intercept point
f = 1 GHz
-
21
-
19.4
-
dBm
f = 2.2 GHz
-
24
-
22.7
-
dBm
IP3
out
output, third order
intercept point
f = 1 GHz
0
2.3
-
dBm
f = 2.2 GHz
-
1
0.6
-
dBm
9397 750 13291
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 24 September 2004
4 of 14
Philips Semiconductors
BGA2715
MMIC wideband amplifier
8.
Application information
Figure 1
shows a typical application circuit for the BGA2715 MMIC. The device is
internally matched to 50
, and therefore does not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The 22 nF supply decoupling capacitor, C1 should be located as close as possible to the
MMIC.
The printed-circuit board (PCB) top ground plane, connected to pins 2, 4 and 5 must be as
close as possible to the MMIC, and ideally directly beneath it. When using via holes, use
multiple via holes, located as close as possible to the MMIC.
Figure 2
shows the PCB layout, used for the standard demonstration board.
Fig 1.
Typical application circuit.
mgu435
RF_OUT
RF_IN
C1
C2
C3
GND2
GND1
V
S
V
S
RF input
RF output
1
3
2, 5
6
4
9397 750 13291
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 24 September 2004
5 of 14
Philips Semiconductors
BGA2715
MMIC wideband amplifier
8.1 Grounding and output impedance
If the grounding is not optimal, the gain becomes less flat and the 50
output matching
becomes worse. To further increase output matching to 50
, a 12
resistor (R1) can be
placed in series with C3 (see
Figure 3
). This will significantly improve the output
impedance, at the cost of 1 dB gain and 1 dB output power.
Material = FR4, thickness = 0.6 mm,
r
= 4.6.
Fig 2.
PCB layout and demonstration board showing components.
001aab255
OUT
IN
PH
V
+
PHILIPS
OUT
IN
PH
V
+
PHILIPS
C3
C2
C1
DUT
30 mm
30 mm
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