BGF1801-10
GSM1800 EDGE power module
DATA SHEET
Product specification
2003 Dec 15
DISCRETE SEMICONDUCTORS
BGF1801-10
GSM1800 EDGE power module
M3D737
2003 Dec 15
2
Philips Semiconductors
Product specification
GSM1800 EDGE power module
BGF1801-10
FEATURES
Typical GSM EDGE performance at a supply voltage of
26 V:
Output power = 3.5 W
Gain = 26.5 dB
Efficiency = 19%
ACPR <
-
63 dBc at 400 kHz
rms EVM < 1.2%
peak EVM < 3.6%.
Low distortion to CDMA signals
Excellent 2-tone performance
Low die temperature due to copper flange
Integrated temperature compensated bias
50
input/output impedance
Flat gain over frequency band.
APPLICATIONS
Base station RF power amplifiers in the
1805 to 1880 MHz frequency range
GSM, GSM EDGE, multi carrier applications
Macrocell (driver stage) and Microcell (final stage).
DESCRIPTION
10 W LDMOS power amplifier module for base station
amplifier applications in the 1805 to 1880 MHz band.
PINNING - SOT365C
PIN
DESCRIPTION
1
RF input
2
V
S
3
RF output
Flange
ground
2 3
1
Top view
MBL257
Fig.1 Simplified outline.
QUICK REFERENCE DATA
Typical RF performance at T
mb
= 25
C; Z
S
= Z
L
= 50
.
Note
1. ACPR 400 kHz at 30 kHz resolution bandwidth.
ORDERING INFORMATION
MODE OF OPERATION
f
(MHz)
V
S
(V)
P
L
(W)
G
p
(dB)
(%)
ACPR
(dBc)
rms EVM
(%)
CW
1805 to 1880
26
10
25.5
34
-
-
GSM EDGE
1805 to 1880
26
3.5
26.5
19
-
63
(1)
1.2
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BGF1801-10
-
plastic rectangular single-ended flat package; flange mounted;
2 mounting holes; 3 in-line leads
SOT365C
2003 Dec 15
3
Philips Semiconductors
Product specification
GSM1800 EDGE power module
BGF1801-10
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
T
mb
= 25
C; V
S
= 26 V; P
L
= 6 W; f = 1805 to 1880 MHz; Z
S
= Z
L
= 50
;
unless otherwise specified.
Notes
1. G
pi
is small signal in-band gain.
2. As defined by ETSI.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
S
DC supply voltage
-
30
V
P
D
input drive power
-
100
mW
P
L
load power
-
15
W
T
stg
storage temperature
-
30
+100
C
T
mb
operating mounting base temperature
-
20
+85
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DQ
quiescent current (pin 2)
P
D
= 0 mW
220
255
280
mA
P
1dB
load power
at 1 dB gain compression
7
10
-
W
G
p
power gain
24
26.5
29
dB
G
p(freq)
gain flatness over frequency
range
-
0.7
2
dB
G
p(pwr)
gain flatness over power band P
L
= 50 mW up to 5 W
-
1
0
+1
dB
G
OB
out of band gain
small signal, P
D
= 0 dBm;
f < 1805 MHz, f > 1880 MHz
-
-
G
pi max
+ 2
note 1
dB
efficiency
22
25
-
%
VSWR
in
input VSWR
-
1.6 : 1
2.2 : 1
H
2
second harmonic
-
-
58
-
50
dBc
H
3
third harmonic
-
-
59
-
53
dBc
GSM EDGE MODE (P
L
= 3.5 W average)
SR200
spectral regrowth
200 kHz; P
L
= 3.5 W; note 2
-
-
37
-
32
dBc
SR400
400 kHz; P
L
= 3.5 W; note 2
-
-
63
-
60
dBc
EVM
rms
rms EDGE signal distortion
-
1.2
2.5
%
EVM
M
peak EDGE signal distortion
-
3.6
8
%
2003 Dec 15
4
Philips Semiconductors
Product specification
GSM1800 EDGE power module
BGF1801-10
0
P
L(AV)
(W)
27
26
25
24
2
4
8
6
mle335
G
p
(dB)
D
(%)
G
p
D
30
10
20
0
Fig.2
GSM EDGE power gain and efficiency as
functions of load power; typical values.
f = 1843 MHz.
handbook, halfpage
0
PL(AV) (W)
-
61
-
63
-
65
-
67
2
4
8
6
MLE336
ACPR
(dBc)
Fig.3
GSM EDGE ACPR at 400 kHz as a function
of load power; typical values.
f = 1843 MHz.
handbook, halfpage
0
2
PL(AV) W
EVM rms
(%)
4
8
0
2
6
1.5
1
0.5
MLE337
Fig.4
GSM EDGE rms EVM as a function of
average load power; typical values.
f = 1843 MHz.
handbook, halfpage
0
2
PL(AV) (W)
EVM
(%)
4
8
6
2
0
4
6
MLE338
Fig.5
GSM EDGE peak EVM as function of
average load power; typical values.
f = 1843 MHz.
2003 Dec 15
5
Philips Semiconductors
Product specification
GSM1800 EDGE power module
BGF1801-10
handbook, halfpage
0
5
10
15
26.8
26.4
25.6
25.2
26
40
30
10
0
20
MLE339
Gp
(dB)
Gp
PL (W)
D
(%)
D
Fig.6
CW gain power and efficiency as functions
of load power; typical values.
f = 1843 MHz.
handbook, halfpage
0
2
PL(AV) (W)
Gp
(dB)
4
8
27
26.6
25.8
25.4
26.2
6
MLE340
D
(%)
Gp
D
40
30
10
0
20
Fig.7
Two tone gain power and efficiency as
functions of load power; typical values.
f
1
= 1843 MHz; f
2
= 1843.2 MHz.
handbook, halfpage
0
2
d7
PL(AV) (W)
4
8
-
70
-
30
-
20
6
-
40
-
50
-
60
MLE341
dim
(dBc)
d3
d5
Fig.8
Two tone intermodulation distortion as a
function of average load power; typical
values.
f
1
= 1843 MHz; f
2
= 1843.2 MHz.
handbook, halfpage
1.68
f (GHz)
28
24
20
16
1.76
1.84
2
1.92
MLE342
s21
(dB)
s11
(dB)
s11
s21
0
-
20
-
10
-
30
Fig.9 s-parameters as a function of frequency.
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