DATA SHEET
Preliminary specification
1999 Aug 23
DISCRETE SEMICONDUCTORS
BGY212A
UHF amplifier module
book, halfpage
M3D373
1999 Aug 23
2
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
FEATURES
3.5 V nominal supply voltage
2 W output power
Easy output power control by DC voltage.
APPLICATIONS
Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
1710 to 1785 MHz frequency range.
DESCRIPTION
The BGY212A is a three-stage UHF amplifier module in a
SOT482C leadless package with a plastic cover. The
module consists of one NPN silicon planar transistor die
and one bipolar monolithic integrated circuit mounted
together with matching and bias circuit components on a
metallized ceramic substrate.
PINNING - SOT482C
PIN
DESCRIPTION
1
RF input
2
V
C
3
V
S
4
RF output
5
ground
Fig.1 Simplified outline
book, halfpage
MBK201
Bottom view
4
3
2
5
1
QUICK REFERENCE DATA
RF performance at T
mb
= 25
C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF
OPERATION
f
(MHz)
V
S
(V)
V
C
(V)
P
L
(dBm)
G
p
(dB)
(%)
Z
S
, Z
L
(
)
Pulsed;
= 1 : 8
1710 to 1785
3.5
2.2
typ. 33
typ. 33
typ. 40
50
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
DC supply voltage
V
C
< 0.2 V; P
D
= 0 mW
-
7
V
V
C
0.2 V
-
4.1
V
V
C
DC control voltage
-
2.7
V
P
D
input drive power
-
10
dBm
P
L
load power
-
34.1
dBm
T
stg
storage temperature
-40
+100
C
T
mb
operating mounting base temperature
-30
+100
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Aug 23
3
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
CHARACTERISTICS
Z
S
= Z
L
= 50
; P
D
= 0 dBm; V
S
= 3.5 V; V
C
2.2 V; f = 1710 to 1785 MHz; T
mb
= 25
C; = 1 : 8; t
p
= 575
s unles
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
Q
leakage current
V
C
= 0.2 V
-
-
10
A
V
C
= 0.2 V; V
S
= 7 V
-
5
20
mA
I
CM
peak control current
adjust V
C
for P
L
= 32 dBm
-
-
3
mA
P
L
load power
V
C
= 2.2 V; V
S
= 3.5 V
-
33.2
-
dBm
V
C
= 2.2 V; V
S
= 3.2 V
32
32.3
-
dBm
V
C
= 2.2 V; V
S
= 3.2 V; T
mb
= 85
C
31
31.8
-
dBm
G
p
power gain
P
L
= 32 dBm
-
32
-
dB
efficiency
P
L
= 32 dBm
-
40
-
%
H
2
second harmonic
P
L
= 32 dBm
-
-
-35
dBc
H
3
third harmonic
P
L
= 32 dBm
-
-
-40
dBc
VSWR
in
input VSWR
P
L
= 2 to 32 dBm
-
3 : 1
stability
V
S
= 3.2 to 4.1 V; P
D
=
-3 to 3 dBm;
V
C
= 0 to 2.2 V; P
L
33 dBm;
VSWR
8 : 1 through all phases
-
-
-60
dBc
isolation
V
C
= 0.2 V; P
D
= 3 dBm
-
-36
-33
dBm
control bandwidth
tbd
-
-
MHz
P
n
noise power
P
L
= 2 to 32 dBm;
bandwidth = 100 kHz; 20 MHz above
transmission band
-
-73
-71
dBm
AM/AM conversion
P
D
with 3% AM; f = 100 kHz;
P
L
= 2 to 32 dBm
-
5
8
%
AM/PM conversion
P
D
=
-0.5 to 0.5 dBm;
P
L
= 2 to 32 dBm
-
-
tbd
deg/dB
control slope
P
L
=
-8 to +2 dBm
-
tbd
-
dB / V
P
L
= 2 to 32 dBm
-
tbd
-
dB / V
T
X
/ R
X
conversion
P
L
= 32 dBm; f = 1785 MHz
P
L
(1805 MHz) / P
D
(1765 MHz)
-
28
30
dB
t
r
carrier rise time
P
L
= 2 to 32 dBm; time to settle
within
-0.5 dB of final P
L
-
1.5
2
s
t
f
carrier fall time
P
L
= 2 to 32 dBm; time to fall below
- 33 dBm
-
1.5
2
s
ruggedness
V
S
= 4.1 V; adjust V
C
for
P
L
= 33 dBm; VSWR
8 : 1 through
all phases
no degradation
1999 Aug 23
4
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
Fig.2
Load power as a function of control voltage;
typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 0 dBm;
T
mb
= 25
C; = 1 : 8; t
p
= 575
s.
0
1
2
3
1
1.5
2
2.5
V
C
(V)
P
L
(W)
1785MHz
1710MHz
Fig.3
Load power as a function of supply voltage;
typical values.
Z
S
= Z
L
= 50
; V
C
= 2.2 V; P
D
= 0 dBm;
T
mb
= 25
C; = 1 : 8; t
p
= 575
s.
0
1
2
3
4
2
3
4
5
V
S
(V)
P
L
(W)
1710MHz
1785MHz
Fig.4
Efficiency as a function of load power;
typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 0 dBm;
T
mb
= 25
C; = 1 : 8; t
p
= 575
s.
0
10
20
30
40
50
0
0.5
1
1.5
2
2.5
P
L
(W)
(%)
1785MHz
1710MHz
Fig.5
Load power as a function of frequency;
typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 0 dBm; V
C
= 2.2 V;
T
mb
= 25
C; = 1 : 8; t
p
= 575
s.
0
1
2
3
1700
1750
1800
f (MHz)
P
L
(W)
1999 Aug 23
5
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
Fig.6
Input VSWR as a function of load power;
typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 0 dBm;
T
mb
= 25
C; = 1 : 8; t
p
= 575
s
1
2
3
4
0
1
2
3
P
L
(W)
VSWR
IN
1710MHz
1785MHz
Fig.7
Harmonics as a function of
frequency; typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 0 dBm; P
L
= 1.6 W;
T
mb
= 25
C; = 1 : 8; t
p
= 575
s.
-80
-60
-40
-20
0
1700
1750
1800
f (MHz)
H
2
, H
3
(dBc)
H
2
H
3
Z
S
= Z
L
= 50
; P
D
= 0 dBm; V
C
= 2.2 V;
= 1 : 8; t
p
= 575
s.
(1) V
S
= 3.5 V; f = 1710 MHz.
(2) V
S
= 3.5 V; f = 1785 MHz.
(3) V
S
= 3.2 V; f = 1710 MHz.
(4) V
S
= 3.2 V; f = 1785 MHz.
0
1
2
3
0
20
40
60
80
100
T
mb
(C)
P
L
(W)
(1)
(4)
(3)
(2)
Fig.8
Load power as a function of mounting
base temperature; typical values.
Fig.9
Output amplitude modulation as a
function of load power; typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 0 dBm; T
mb
= 25
C;
f = 100 kHz; input amplitude modulation = 3%; = 1 : 8; t
p
= 575
s.
0
4
8
12
16
-20
0
20
40
P
L
(dBm)
output
AM
(%)
1785MHz
1710MHz
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