DATA SHEET
Product specification
Supersedes data of 1997 Jul 11
1998 May 27
DISCRETE SEMICONDUCTORS
BGY916
UHF amplifier module
handbook, halfpage
M3D167
1998 May 27
2
Philips Semiconductors
Product specification
UHF amplifier module
BGY916
FEATURES
26 V nominal supply voltage
16 W output power into a load of 50
with an RF drive
power of 25 mW.
APPLICATIONS
Base station transmitting equipment operating in the
920 to 960 MHz frequency range.
DESCRIPTION
The BGY916 is a three-stage UHF amplifier module in a
SOT365A package. It consists of one NPN silicon planar
transistor die and two silicon MOS-FET dies mounted on a
metallized ceramic AlN substrate, together with matching
and bias circuitry.
PINNING - SOT365A
PIN
DESCRIPTION
1
RF input
2
V
S1
3
V
S2
4
RF output
flange
ground
Fig.1 Simplified outline.
handbook, halfpage
MSA447
2
1
3
4
QUICK REFERENCE DATA
RF performance at T
mb
= 25
C.
MODE OF OPERATION
f
(MHz)
V
S1
; V
S2
(V)
P
L
(W)
G
p
(dB)
(%)
Z
S
; Z
L
(
)
CW
920 to 960
26
16
28
35
50
1998 May 27
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY916
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
mb
= 25
C; V
S1
= V
S2
= 26 V; P
L
= 16 W; Z
S
= Z
L
= 50
unless otherwise specified.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
S1
DC supply voltage
-
28
V
V
S2
DC supply voltage
-
28
V
P
D
input drive power
-
80
mW
P
L
load power
-
25
W
T
stg
storage temperature
-
30
+100
C
T
mb
operating mounting base temperature
-
10
+90
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f
frequency
920
-
960
MHz
I
S1
supply current
-
50
-
mA
I
S2
supply current
P
D
<
-
60 dBm
-
150
-
mA
P
L
load power
16
19
-
W
G
p
power gain
28
30
32
dB
G
p
gain ripple
40 dB dynamic range at
f = 920 to 960 MHz
-
1
4
dB
efficiency
35
40
-
%
H
2
second harmonic
-
-
47
-
35
dBc
H
3
third harmonic
-
-
55
-
45
dBc
VSWR
in
input VSWR
-
1 : 1.5
2 : 1
isolation
V
S1
= 0
-
-
-
40
dBm
stability
VSWR
3 : 1 through all phases;
V
S2
= 24 to 28 V
-
-
-
60
dBc
reverse intermodulation
P
carrier
= 16 W; P
interference
= 16
W;
f
i
= f
c
600 kHz
-
-
68
-
65
dBc
F
noise figure
-
5
8
dBc
B
AM bandwidth
2
-
-
MHz
ruggedness
VSWR
5 : 1 through all phases
no degradation
1998 May 27
4
Philips Semiconductors
Product specification
UHF amplifier module
BGY916
Fig.2
Load power as a function of frequency;
typical values.
V
S1
= V
S2
= 26 V; Z
S
= Z
L
= 50
; T
mb
= 25
C.
handbook, halfpage
0
10
20
30
40
50
900
920
940
960
f (MHz)
MBG286
980
PL
(dBm)
PD (dBm)
+
15
+
12
+
9
+
6
+
3
0
Fig.3
Power gain and efficiency as functions of
frequency; typical values.
V
S1
= V
S2
= 26 V; P
L
= 16 W; Z
S
= Z
L
= 50
; T
mb
= 25
C.
handbook, halfpage
0
10
20
30
40
50
0
10
20
30
40
50
900
920
940
960
f (MHz)
MBG287
980
Gp
(dB)
Gp
(%)
Fig.4
Harmonics as a function of frequency;
typical values.
V
S1
= V
S2
= 26 V; P
L
= 16 W; Z
S
= Z
L
= 50
; T
mb
= 25
C.
handbook, halfpage
70
60
50
40
30
20
900
920
940
960
f (MHz)
H
2
H
3
MBG285
H , H
(dBc)
2
3
980
Fig.5
Load power as a function of supply
voltage; typical values.
f = 940 MHz; V
S2
= 26 V; Z
S
= Z
L
= 50
; T
mb
= 25
C.
handbook, halfpage
0
10
20
VS1 (V)
30
50
PL
(dBm)
30
-
10
-
30
10
MGD185
1998 May 27
5
Philips Semiconductors
Product specification
UHF amplifier module
BGY916
Fig.6 Test circuit.
handbook, halfpage
Z1
C3
C1
1
pin
numbers
2
3
4
Vs1
RF
input
L1
R1
C4
C2
MGL161
Vs2
L2
R2
Z2
RF
output
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