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Электронный компонент: BLF2022-30

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DATA SHEET
Product specification
Supersedes data of 2002 Dec 19
2003 Feb 24
DISCRETE SEMICONDUCTORS
BLF2022-30
UHF power LDMOS transistor
M3D750
2003 Feb 24
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
FEATURES
Typical W-CDMA performance at a supply voltage of
28 V and I
DQ
of 240 mA:
Output power = 3.5 W (AV)
Gain = 12.9 dB
Efficiency = 16.5%
ACPR =
-
45 dBc at 3.84 MHz
d
im
=
-
42 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
DESCRIPTION
30 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
PINNING - SOT608A
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to flange
Top view
2
1
3
MBL290
Fig.1 Simplified outline (SOT608A).
QUICK REFERENCE DATA
Typical RF performance at T
h
= 25
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
p
(dB)
D
(%)
d
im
(dBc)
ACLR
5
(dBc)
2-tone, class-AB
f
1
= 2170; f
2
= 2170.1
28
240
30 (PEP)
12.6
34.3
-
29.5
-
two-carrier W-CDMA test
model 1, 64 channels
f
1
= 2155; f
2
= 2165
28
270
3.5 (AV)
12.9
16.5
-
42
-
45
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 24
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Notes
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
C; R
th j-c
= 1.85 K/W; unless otherwise specified.
Ruggedness in class-AB operation
The BLF2022-30 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
DS
= 28 V; I
DQ
= 240 mA; P
L
= 30 W; f = 2170 MHz.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
65
V
V
GS
gate-source voltage
-
15
V
I
D
DC drain current
-
4.5
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
200
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to heatsink T
h
= 25
C; note 1
1.85
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 0.7 mA
65
-
-
V
V
GSth
gate-source threshold voltage
V
DS
= 10 V; I
D
= 70 mA
4.5
-
5.5
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 28 V
-
-
5
A
I
DSX
on-state drain current
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
9
-
-
A
I
GSS
gate leakage current
V
GS
=
15 V; V
DS
= 0
-
-
11
nA
g
fs
forward transconductance
V
DS
= 10 V; I
D
= 2.5 A
-
2
-
S
R
DSon
drain-source on-state resistance
V
GS
= V
GSth
+ 9 V; I
D
= 2.5 A
-
0.3
-
C
rs
feedback capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
1.7
-
pF
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
p
(dB)
D
(%)
d
im
(dBc)
2-tone, class-AB
f
1
= 2170; f
2
= 2170.1
28
240
30 (PEP)
>11
>30
-
25
2003 Feb 24
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
handbook, halfpage
Gp
(dB)
Gp
D
(%)
D
15
10
5
0
60
20
0
40
MLD935
0
20
10
30
40
50
PL (PEP) (W)
Fig.2
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
V
DS
= 28 V; I
DQ
= 240 mA; T
h
25
C;
f
1
= 2170 MHz; f
2
= 2170.1 MHz.
handbook, halfpage
dim
(dBc)
d3
d5
d7
0
20
10
30
40
50
PL (PEP) (W)
0
-
20
-
60
-
80
-
40
MLD936
V
DS
= 28 V; I
DQ
= 240 mA; T
h
25
C;
f
1
= 2170 MHz; f
2
= 2170.1 MHz.
Fig.3
Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
Gp
(dB)
D
(%)
15
10
5
0
60
20
0
40
MLD937
0
20
10
30
40
50
PL (PEP) (W)
(1)
(3)
(2)
(4)
(6)
(5)
Gp
D
Fig.4
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
V
DS
= 28 V; T
h
25
C;
f
1
= 2170 MHz; f
2
= 2170.1 MHz.
(1) I
DQ
= 290 mA.
(2) I
DQ
= 240 mA.
(3) I
DQ
= 190 mA.
(4) I
DQ
= 190 mA.
(5) I
DQ
= 240 mA.
(6) I
DQ
= 290 mA.
handbook, halfpage
dim
(dBc)
0
20
10
30
40
50
PL (PEP) (W)
0
-
20
-
60
-
80
-
40
MLD938
(2)
(3)
(1)
V
DS
= 28 V; T
h
25
C;
f
1
= 2170 MHz; f
2
= 2170.1 MHz.
Fig.5
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
(1) I
DQ
= 190 mA.
(2) I
DQ
= 240 mA.
(3) I
DQ
= 290 mA.
2003 Feb 24
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
handbook, halfpage
Gp
(dB)
Gp
D
(%)
D
15
10
5
0
30
10
0
20
MLD940
0
4
2
6
8
10
PL (AV) (W)
Fig.6
Power gain and drain efficiency as functions
of average load power; typical values.
Two-carrier W-CDMA performance.
V
DS
= 28 V; I
DQ
= 270 mA; T
h
25
C; f
1
= 2170 MHz.
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
handbook, halfpage
dim
(dBc)
ACLR
(dBc)
0
4
2
6
8
10
0
-
20
-
60
-
40
0
-
20
-
60
-
40
MLD941
ACLR
dim
PL (AV) (W)
Fig.7
Intermodulation distortion and adjacent
channel leakage ratio (ACLR) as functions
of average load power; typical values.
Two-carrier W-CDMA performance.
V
DS
= 28 V; I
DQ
= 270 mA; T
h
25
C; f
1
= 2155 MHz;
f
1
= 2165 MHz;.
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.