BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor
1.
Product profile
1.1 General description
120 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
[1]
ACPR
400
at 30 kHz resolution bandwidth
[2]
ACPR
600
at 30 kHz resolution bandwidth
1.2 Features
s
Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V
and an I
Dq
of 850 mA:
x
Load power = 48 W (AV)
x
Gain = 19 dB (typ)
x
Efficiency = 40 % (typ)
x
ACPR
400
=
-
61 dBc (typ)
x
ACPR
600
=
-
72 dBc (typ)
x
EVM
rms
= 1.5 % (typ)
s
Easy power control
s
Excellent ruggedness
s
High efficiency
s
Excellent thermal stability
s
Designed for broadband operation (800 MHz to 1000 MHz)
s
Internally matched for ease of use
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
Rev. 01 -- 10 January 2006
Product data sheet
Table 1:
Typical performance
RF performance at T
h
= 25
C in a common base class-AB test circuit.
Mode of
operation
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
(typ)
D
(%)
ACPR
400
(dBc)
(typ)
ACPR
600
(dBc)
(typ)
EVM
rms
(%)
IMD3
(dBc)
(typ)
CW
861 to 961 28
120
19
57
-
-
-
-
GSM EDGE 861 to 961 28
48 (AV)
19
40
-
61
[1]
-
72
[2]
1.5
-
2-tone
861 to 961 28
120 (PEP) 19
46
-
-
-
-
31
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
9397 750 14549
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
2 of 14
Philips Semiconductors
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
1.3 Applications
s
RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 800 MHz to 1000 MHz frequency range.
2.
Pinning information
[1]
Connected to flange
3.
Ordering information
4.
Limiting values
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
BLF4G10-120 (SOT502A)
1
drain
2
gate
3
source
[1]
BLF4G10S-120 (SOT502B)
1
drain
2
gate
3
source
[1]
3
2
1
1
3
2
sym039
3
2
1
1
3
2
sym039
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BLF4G10-120
-
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
SOT502A
BLF4G10S-120
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage
-
65
V
V
GS
gate-source voltage
-
0.5
+15
V
I
D
drain current
-
12
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
200
C
9397 750 14549
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
3 of 14
Philips Semiconductors
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
5.
Thermal characteristics
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF4G10-120 and BLF4G10S-120 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 850 mA; P
L
= 120 W (CW); f = 960 MHz.
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-case)
thermal resistance from
junction to case
T
case
= 80
C
P
L
= 60 W
-
0.76
0.85
K/W
P
L
= 120 W
-
0.65
0.74
K/W
Table 6:
Characteristics
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 0.9 mA
65
-
-
V
V
GS(th)
gate-source threshold voltage
V
DS
= 10 V; I
D
= 180 mA
2.5
3.1
3.5
V
V
GSq
gate-source quiescent voltage
V
DS
= 28 V; I
D
= 900 mA
2.7
3.2
3.7
V
I
DSS
drain leakage current
V
GS
= 0 V; V
DS
= 28 V
-
-
3
A
I
DSX
drain cut-off current
V
GS
= V
GS(th)
+ 6 V;
V
DS
= 10 V
27
30
-
A
I
GSS
gate leakage current
V
GS
= 15 V; V
DS
= 0 V
-
-
300
nA
g
fs
forward transconductance
V
DS
= 10 V; I
D
= 10 A
-
9.0
-
S
R
DS(on)
drain-source on-state resistance V
GS
= V
GS(th)
+ 6 V;
I
D
= 6 A
-
0.09
-
C
rs
feedback capacitance
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
-
2.5
-
pF
Table 7:
Application information
Mode of operation: 2-tone (100 kHz tone spacing); f = 960 MHz.
V
DS
= 28 V; I
Dq
= 850 mA; T
case
= 25
C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
G
p
power gain
P
L(PEP)
= 120 W
18
19
-
dB
IRL
input return loss
P
L(PEP)
= 120 W
-
-
8
-
5
dB
D
drain efficiency
P
L(PEP)
= 120 W
44
46
-
%
IMD3
third order intermodulation
distortion
P
L(PEP)
= 120 W
-
-
31
-
27
dBc
9397 750 14549
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
4 of 14
Philips Semiconductors
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
V
DS
= 28 V; I
Dq
= 850 mA; T
case
= 25
C;
f = 960 MHz
V
DS
= 28 V; I
Dq
= 850 mA; T
case
= 25
C;
f = 960 MHz
Fig 1.
One-tone CW power gain and drain efficiency
as functions of load power; typical values
Fig 2.
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
V
DS
= 28 V; I
Dq
= 850 mA; T
case
= 25
C;
f = 960 MHz
V
DS
= 28 V; T
case
= 25
C; f = 960 MHz
(1) I
Dq
= 650 mA
(2) I
Dq
= 750 mA
(3) I
Dq
= 850 mA
(4) I
Dq
= 950 mA
Fig 3.
Intermodulation distortion as a function of peak
envelope load power; typical values
Fig 4.
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
P
L
(W)
0
200
150
50
100
001aac400
18.5
40
17.5
19.5
20.5
G
p
(dB)
16.5
G
p
D
(%)
D
20
0
60
80
P
L(PEP)
(W)
0
300
200
100
001aac401
18
19
20
60
G
p
(dB)
17
40
20
0
G
p
D
(%)
D
001aac402
P
L(PEP)
(W)
0
300
200
100
-
40
-
60
-
20
0
IMD3
IMD5
IMD7
IMD
(dBc)
-
80
001aac403
P
L(PEP)
(W)
0
300
200
100
-
40
-
60
-
20
0
IMD3
(dBc)
-
80
2
1
4
3
9397 750 14549
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
5 of 14
Philips Semiconductors
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
V
DS
= 28 V; I
Dq
= 850 mA; T
case
= 25
C;
f = 960 MHz
V
DS
= 28 V; I
Dq
= 850 mA; T
case
= 25
C;
f = 960 MHz
Fig 5.
GSM EDGE power gain and drain efficiency as
functions of average load power; typical values
Fig 6.
GSM EDGE ACPR at 400 kHz and at 600 kHz as
functions of average load power; typical values
V
DS
= 28 V; I
Dq
= 850 mA; T
case
= 25
C;
f = 960 MHz
V
DS
= 28 V; I
Dq
= 850 mA; T
case
= 25
C;
f = 960 MHz
Fig 7.
GSM EDGE rms EVM as a function of average
load power; typical values
Fig 8.
GSM EDGE ACPR at 400 kHz and rms EVM as
functions of drain efficiency; typical values
P
L(AV)
(W)
0
80
60
20
40
001aac404
18
19
40
20
G
p
(dB)
D
(%)
17
60
20
0
G
p
D
P
L(AV)
(W)
0
80
60
20
40
001aac405
-
75
-
65
-
55
ACPR
(dBc)
-
85
ACPR
400
ACPR
600
P
L(AV)
(W)
0
80
60
20
40
001aac406
2
1
3
4
EVM
rms
(%)
0
001aac407
D
(%)
0
60
40
20
-
61
-
63
-
59
3
-
57
ACPR
(dBc)
EVM
(%)
-
65
4
2
1
0
ACPR
400
EVM
rms
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