1.
Product profile
1.1 General description
120 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
[1]
ACPR
400
at 30 kHz resolution bandwidth
[2]
ACPR
600
at 30 kHz resolution bandwidth
1.2 Features
s
Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply
voltage of 28 V and an I
Dq
of 650 mA
x
Load power = 48 W (AV)
x
Gain = 19 dB (typ)
x
Efficiency = 40 % (typ)
x
ACPR
400
=
-
61 dBc (typ)
x
ACPR
600
=
-
72 dBc (typ)
x
EVM
rms
= 1.5 % (typ)
s
Easy power control
s
Excellent ruggedness
s
High efficiency
s
Excellent thermal stability
s
Designed for broadband operation (800 MHz to 1000 MHz)
s
Internally matched for ease of use
BLF4G10LS-120
UHF power LDMOS transistor
Rev. 01 -- 10 January 2006
Product data sheet
Table 1:
Typical performance
f = 920 MHz to 960 MHz; T
h
= 25
C; in a class-AB production test circuit; typical values.
Mode of operation
V
DS
(V)
P
L
(W)
G
p
(dB)
D
(%)
ACPR
400
(dBc)
ACPR
600
(dBc)
EVM
(%)
IMD3
(dBc)
CW
28
120
19
57
-
-
-
-
GSM EDGE
28
48 (AV)
19
40
-
61
[1]
-
72
[2]
1.5
-
2-tone
28
120 (PEP)
19
46
-
-
-
-
31
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
9397 750 14547
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
2 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
1.3 Applications
s
RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 868 MHz to 961 MHz frequency range.
2.
Pinning information
[1]
Connected to flange
3.
Ordering information
4.
Limiting values
5.
Thermal characteristics
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
1
drain
2
gate
3
source
[1]
3
2
1
1
3
2
sym039
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BLF4G10LS-120 -
earless flanged LDMOST ceramic package; 2 leads
SOT502B
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage
-
65
V
V
GS
gate-source voltage
-
0.5
+15
V
I
D
drain current
-
12
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
200
C
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-case)
thermal resistance from
junction to case
T
case
= 80
C
P
L
= 60 W
-
0.62
0.71
K/W
P
L
= 120 W
-
0.52
0.61
K/W
9397 750 14547
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
3 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF4G10LS-120 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 650 mA; P
L
= 120 W (CW); f = 960 MHz.
Table 6:
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
(BR)DSS
drain-source breakdown
voltage
V
GS
= 0 V; I
D
= 0.9 mA
65
-
-
V
V
GS(th)
gate-source threshold
voltage
V
DS
= 10 V; I
D
= 180 mA
2.5
3.1
3.5
V
V
GSq
gate-source quiescent
voltage
V
DS
= 28 V; I
D
= 900 mA
2.70
3.20
3.70
V
I
DSS
drain leakage current
V
GS
= 0 V; V
DS
= 28 V
-
-
2.5
A
I
DSX
drain cut-off current
V
GS
= V
GS(th)
+ 9 V;
V
DS
= 10 V
27
30
-
A
I
GSS
gate leakage current
V
GS
= 15 V; V
DS
= 0 V
-
-
300
nA
g
fs
forward
transconductance
V
DS
= 10 V; I
D
= 10 A
-
9.0
-
S
R
DS(on)
drain-source on-state
resistance
V
GS
= V
GS(th)
+ 6 V;
I
D
= 6 A
-
90
-
m
C
rs
feedback capacitance
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
-
2.5
-
pF
Table 7:
Application information
Mode of operation: GSM EDGE; f = 920 MHz and 960 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 650 mA; T
case
= 25
C; unless otherwise specified, in a class AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
G
p
power gain
P
L(AV)
= 48 W
17.5 19
-
dB
IRL
input return loss
P
L(AV)
= 48 W
-
-
8.0
-
5.5 dB
D
drain efficiency
P
L(AV)
= 48 W
35.8 40
-
%
ACPR
400
adjacent channel power ratio (400 kHz)
P
L(AV)
= 48 W
-
-
61
-
58
dBc
ACPR
600
adjacent channel power ratio (600 kHz)
P
L(AV)
= 48 W
-
-
72
-
68
dBc
EVM
rms
rms EDGE signal distortion error
P
L(AV)
= 48 W
-
1.5
2.5
%
EVM
M
peak EDGE signal distortion error
P
L(AV)
= 48 W
-
5
8.5
%
9397 750 14547
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
4 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
C;
f = 960 MHz
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
C;
f = 960 MHz
Fig 1.
One-tone CW power gain and drain efficiency
as functions of load power; typical values
Fig 2.
Two-tone CW power gain and drain efficiency
as functions of average load power; typical
values
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
C;
f = 960 MHz
V
DS
= 28 V; T
case
= 25
C; f = 960 MHz
(1) I
Dq
= 550 mA
(2) I
Dq
= 650 mA
(3) I
Dq
= 750 mA
(4) I
Dq
= 850 mA
Fig 3.
Intermodulation distortion as a function of
average load power; typical values
Fig 4.
Third order intermodulation distortion as a
function of average load power; typical values
P
L
(W)
0
180
140
80
100
40
20
60
120
160
001aac410
14
16
12
18
20
G
p
(dB)
10
20
30
10
40
50
60
70
D
(%)
0
G
p
D
P
L(AV)
(W)
0
90
70
40
50
20
10
30
60
80
001aac411
14
16
12
18
20
G
p
(dB)
10
20
30
10
40
50
60
D
(%)
0
G
p
D
P
L(AV)
(W)
0
80
60
20
40
001aac412
-
40
-
60
-
20
0
IMD
(dBc)
-
80
IMD3
IMD5
IMD7
P
L(AV)
(W)
0
80
60
20
40
001aac413
-
40
-
60
-
20
0
IMD3
(dBc)
-
80
(3)
(4)
(2)
(1)
9397 750 14547
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
5 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
C;
f = 960 MHz
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
C;
f = 960 MHz
Fig 5.
GSM EDGE power gain and drain efficiency as
functions of average load power; typical values
Fig 6.
GSM EDGE ACPR at 400 kHz and at 600 kHz as
a function of average load power; typical values
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
C;
f = 960 MHz
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
C;
f = 960 MHz
Fig 7.
GSM EDGE rms EVM and peak EVM as
functions of average load power; typical values
Fig 8.
GSM EDGE ACPR at 400 kHz and rms EVM as
functions of drain efficiency; typical values
P
L(AV)
(W)
0
80
60
20
40
001aac414
17
18
16
19
20
15
G
p
D
20
10
40
50
30
D
(%)
0
G
p
(dB)
P
L(AV)
(W)
0
80
60
20
40
001aac415
-
70
-
80
-
60
-
50
ACPR
(dBc)
-
90
ACPR
400
ACPR
600
P
L(AV)
(W)
0
80
60
20
40
001aac416
4
6
2
8
10
EVM
(%)
0
EVM
M
EVM
rms
D
(%)
0
50
40
20
30
10
001aac417
-
64
-
68
-
60
-
56
ACPR
(dBc)
-
72
ACPR
400
EVM
rms
2
1
3
4
3
2
1
EVM
(%)
0
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