1.
Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
[1]
ACPR
400
at 30 kHz resolution bandwidth.
[2]
ACPR
600
at 30 kHz resolution bandwidth.
1.2 Features
s
Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an I
Dq
of 650 mA:
x
Load power = 48 W (AV)
x
Gain = 13.8 dB (typ)
x
Efficiency = 38.5 % (typ)
x
ACPR
400
=
-
61 dBc (typ)
x
ACPR
600
=
-
74 dBc (typ)
x
EVM
rms
= 2.1 % (typ)
s
Easy power control
s
Excellent ruggedness
s
High efficiency
s
Excellent thermal stability
s
Designed for broadband operation (1800 MHz to 2000 MHz)
BLF4G20-110B;
BLF4G20S-110B
UHF power LDMOS transistor
Rev. 01 -- 23 January 2006
Product data sheet
Table 1:
Typical performance
f = 1930 MHz to 1990 MHz; T
case
= 25
C; in a class-AB production test circuit.
Mode of operation
V
DS
(V)
P
L
(W)
G
p
(dB)
(typ)
D
(%)
(typ)
ACPR
400
(dBc)
(typ)
ACPR
600
(dBc)
(typ)
EVM
rms
(%)
(typ)
CW
28
100
13.4
49
-
-
-
GSM EDGE
28
48 (AV)
13.8
38.5
-
61
[1]
-
74
[2]
2.1
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
9397 750 14611
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
2 of 14
Philips Semiconductors
BLF4G20-110B; BLF4G20S-110B
UHF power LDMOS transistor
s
Internally matched for ease of use
1.3 Applications
s
RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 1800 MHz to 2000 MHz frequency range.
2.
Pinning information
[1]
Connected to flange
3.
Ordering information
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
BLF4G20-110B (SOT502A)
1
drain
2
gate
3
source
[1]
BLF4G20S-110B (SOT502B)
1
drain
2
gate
3
source
[1]
3
2
1
1
3
2
sym039
3
2
1
1
3
2
sym039
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BLF4G20-110B
-
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
SOT502A
BLF4G20S-110B
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
9397 750 14611
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
3 of 14
Philips Semiconductors
BLF4G20-110B; BLF4G20S-110B
UHF power LDMOS transistor
4.
Limiting values
5.
Thermal characteristics
6.
Characteristics
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
V
DS
drain-source voltage
-
65
V
V
GS
gate-source voltage
-
0.5
+15
V
I
D
drain current
-
12
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
200
C
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-case)
thermal resistance from
junction to case
T
case
= 80
C
P
L
= 40 W
-
0.76
0.85
K/W
P
L
= 100 W
-
0.65
0.74
K/W
Table 6:
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
V
(BR)DSS
drain-source breakdown
voltage
V
GS
= 0 V; I
D
= 0.9 mA
65
-
-
V
V
GS(th)
gate-source threshold
voltage
V
DS
= 10 V; I
D
= 180 mA
2.5
3.1
3.5
V
V
GSq
gate-source quiescent
voltage
V
DS
= 28 V; I
D
= 900 mA
2.7
3.2
3.7
V
I
DSS
drain leakage current
V
GS
= 0 V; V
DS
= 28 V
-
-
3
A
I
DSX
drain cut-off current
V
GS
= V
GS(th)
+ 6 V; V
DS
= 10 V
27
30
-
A
I
GSS
gate leakage current
V
GS
= 15 V; V
DS
= 0 V
-
-
300
nA
g
fs
transfer conductance
V
DS
= 10 V; I
D
= 10 A
-
9.0
-
S
R
DS(on)
drain-source on-state
resistance
V
GS
= V
GS(th)
+ 6 V; I
D
= 6 A
-
90
-
m
C
rs
feedback capacitance
V
GS
= 0 V; V
DS
= 28 V; f = 1 MHz
-
2.5
-
pF
9397 750 14611
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
4 of 14
Philips Semiconductors
BLF4G20-110B; BLF4G20S-110B
UHF power LDMOS transistor
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF4G20(S)-110B is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 650 mA; P
L
= 110 W (CW); f = 1990 MHz.
Table 7:
Application information
Mode of operation: Two-tone (200 kHz tone spacing); f = 1930 MHz and 1990 MHz.
V
DS
= 28 V; I
Dq
= 700 mA; T
case
= 25
C; unless otherwise specified; in a class-AB production test
circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
G
p
power gain
P
L(AV)
= 100 W
12
13.5
-
dB
IRL
input return loss
P
L(AV)
= 100 W
-
-
10
-
6.5
dB
D
drain efficiency
P
L(AV)
= 100 W
36
38.5
-
%
IMD3
third order intermodulation
distortion
P
L(AV)
= 100 W
-
-
29
-
26
dBc
IMD5
fifth order intermodulation
distortion
P
L(AV)
= 100 W
-
-
39.5
-
36.5 dBc
IMD7
seventh order intermodulation
distortion
P
L(AV)
= 100 W
-
-
53.5
-
50.5 dBc
9397 750 14611
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
5 of 14
Philips Semiconductors
BLF4G20-110B; BLF4G20S-110B
UHF power LDMOS transistor
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
C;
f = 1990 MHz
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
C;
f = 1990 MHz
Fig 1.
One-tone CW power gain and drain efficiency
as functions of load power; typical values
Fig 2.
Two-tone CW power gain and drain efficiency
as functions of average load power; typical
values
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
C;
f = 1990 MHz
V
DS
= 28 V; T
case
= 25
C; f = 1990 MHz
(1) I
Dq
= 550 mA
(2) I
Dq
= 650 mA
(3) I
Dq
= 750 mA
(4) I
Dq
= 850 mA
Fig 3.
Intermodulation distortion as a function of
average load power; typical values
Fig 4.
Third order intermodulation distortion as a
function of average load power; typical values
P
L
(W)
0
160
120
40
80
001aac387
11
20
40
60
0
13
15
G
p
(dB)
G
p
D
(%)
D
9
P
L(AV)
(W)
0
100
80
40
60
20
001aac388
12
13
11
14
15
G
p
(dB)
10
G
p
D
0
D
(%)
50
40
30
20
10
P
L(AV)
(W)
0
100
80
40
60
20
001aac389
-
40
-
60
-
20
0
IMD
(dBc)
IMD3
IMD5
IMD7
-
80
P
L(AV)
(W)
0
100
80
40
60
20
001aac390
-40
-60
-20
0
IMD3
(dBc)
-80
1
2
3
4
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