DATA SHEET
Product specification
November 1992
DISCRETE SEMICONDUCTORS
BLF521
UHF power MOS transistor
November 1992
2
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
FEATURES
High power gain
Easy power control
Gold metallization
Good thermal stability
Withstands full load mismatch
Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT172D studless envelope,
with a ceramic cap. All leads are
isolated from the mounting base.
PINNING - SOT172D
PIN
DESCRIPTION
1
source
2
gate
3
drain
4
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
ook, halfpage
2
1
4
3
MSB007
Top view
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at T
amb
= 25
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
D
(%)
CW, class-B
500
12.5
2
>
10
>
50
November 1992
3
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Mounted on printed circuit board, see Fig.12.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
40
V
V
GS
gate-source voltage
-
20
V
I
D
DC drain current
-
1
A
P
tot
total power dissipation
up to T
mb
= 25
C
-
10
W
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
200
C
SYMBOL
PARAMETER
THERMAL
RESISTANCE
R
th j-mb
thermal resistance from junction to mounting base
17.5 K/W
R
th j-a
thermal resistance from junction to ambient (note 1)
75 K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by R
DS(on)
.
(2) T
mb
= 25
C.
handbook, halfpage
0.1
1
1
10
100
5
(1)
ID
(A)
VDS (V)
MRA989
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0
40
80
160
16
12
4
0
8
120
MDA486
(1)
(2)
Ptot
(W)
Tmb (
C)
November 1992
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 3 mA
40
-
-
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 12.5 V
-
-
10
A
I
GSS
gate-source leakage current
V
GS
= 20 V; V
DS
= 0
-
-
1
A
V
GS(th)
gate-source threshold voltage
I
D
= 3 mA; V
DS
= 10 V
2
-
4.5
V
g
fs
forward transconductance
I
D
= 0.3 A; V
DS
= 10 V
80
135
-
mS
R
DS(on)
drain-source on-state resistance
I
D
= 0.3 A; V
GS
= 15 V
-
3.5
4
I
DSX
on-state drain current
V
GS
= 15 V; V
DS
= 10 V
-
1.3
-
A
C
is
input capacitance
V
GS
= 0; V
DS
= 12.5 V; f = 1 MHz
-
5.3
-
pF
C
os
output capacitance
V
GS
= 0; V
DS
= 12.5 V; f = 1 MHz
-
7.8
-
pF
C
rs
feedback capacitance
V
GS
= 0; V
DS
= 12.5 V; f = 1 MHz
-
1.8
-
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
V
DS
= 10 V.
handbook, halfpage
15
-
5
5
10
0
MDA485
1
ID (A)
T.C
(mV/K)
10
10
2
10
3
Fig.5
Drain current as a function of gate-source
voltage, typical values.
V
DS
= 10 V
;
T
j
= 25
C.
handbook, halfpage
0
4
20
1600
1200
400
0
800
8
12
16
MDA484
ID
(mA)
VGS (V)
November 1992
5
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values.
I
D
= 0.3 A; V
GS
= 15 V.
handbook, halfpage
0
40
80
RDSon
(
)
Tj (
C)
160
5
0
4
120
3
2
1
MDA483
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
30
20
10
0
4
Cos
Cis
VDS (V)
C
(pF)
8
16
12
MDA482
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
4
8
Crs
(pF)
VDS (V)
16
5
0
4
12
3
2
1
MDA481
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