DATA SHEET
Product specification
Supersedes data of 1997 Apr 22
1999 Apr 23
DISCRETE SEMICONDUCTORS
BSP50; BSP51; BSP52
NPN Darlington transistors
handbook, halfpage
M3D087
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN Darlington transistors
BSP50; BSP51; BSP52
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V)
Integrated diode and resistor.
APPLICATIONS
Industrial high gain amplification.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complements: BSP60, BSP61 and BSP62.
PINNING
PIN
DESCRIPTION
1
base
2,4
collector
3
emitter
Fig.1 Simplified outline (SOT223) and symbol.
4
1
2
3
MAM265
Top view
1
2, 4
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
"Thermal considerations for the SOT223 in the General Part of associated
Handbook".
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BSP50
-
60
V
BSP51
-
80
V
BSP52
-
90
V
V
CES
collector-emitter voltage
V
BE
= 0
BSP50
-
45
V
BSP51
-
60
V
BSP52
-
80
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
1
A
I
CM
peak collector current
-
2
A
I
B
base current (DC)
-
100
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
1.25
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 23
3
Philips Semiconductors
Product specification
NPN Darlington transistors
BSP50; BSP51; BSP52
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
"Thermal considerations for the SOT223 in the General Part of associated
Handbook".
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
96
K/W
R
th j-s
thermal resistance from junction to solder point
17
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
collector cut-off current
BSP50
V
BE
= 0; V
CE
= 45 V
-
-
50
nA
BSP51
V
BE
= 0; V
CE
= 60 V
-
-
50
nA
BSP52
V
BE
= 0; V
CE
= 80 V
-
-
50
nA
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 4 V
-
-
50
nA
h
FE
DC current gain
V
CE
= 10 V; note 1; see Fig.2
I
C
= 150 mA
1000
-
-
I
C
= 500 mA
2000
-
-
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 0.5 mA
-
-
1.3
V
I
C
= 500 mA; I
B
= 0.5 mA;
T
j
= 150
C
-
-
1.3
V
V
BEsat
base-emitter saturation
voltage
I
C
= 500 mA; I
B
= 0.5 mA
-
-
1.9
V
f
T
transition frequency
I
C
= 500 mA; V
CE
= 5 V; f = 100 MHz
-
200
-
MHz
Switching times (between 10% and 90% levels); see Fig.3
t
on
turn-on time
I
Con
= 500 mA; I
Bon
= 0.5 mA;
I
Boff
=
-
0.5 mA
-
500
-
ns
t
off
turn-off time
-
1300
-
ns
1999 Apr 23
4
Philips Semiconductors
Product specification
NPN Darlington transistors
BSP50; BSP51; BSP52
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
5000
1000
2000
3000
4000
MGD838
10
-
1
1
IC (mA)
hFE
10
10
2
10
3
V
CE
= 10 V.
Fig.3 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB
(probe)
450
(probe)
450
oscilloscope
oscilloscope
VBB
Vi
VCC
V
i
= 10 V; T = 200
s; t
p
= 6
s; t
r
= t
f
3 ns.
R1 = 56
; R2 = 10 k
; R
B
= 10 k
; R
C
= 18
.
V
BB
=
-
1.8 V; V
CC
= 10.7 V.
Oscilloscope: input impedance Z
i
= 50
.
1999 Apr 23
5
Philips Semiconductors
Product specification
NPN Darlington transistors
BSP50; BSP51; BSP52
PACKAGE OUTLINE
UNIT
A
1
b
p
c
D
E
e
1
H
E
L
p
Q
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1
0.1
0.2
DIMENSIONS (mm are the original dimensions)
SOT223
96-11-11
97-02-28
w
M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
A
B
B
c
y
0
2
4 mm
scale
A
X
1
3
2
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
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