Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
field-effect power transistor in a
plastic full-pack envelope.
BUK446
-800A
-800B
The device is intended for use in
V
DS
Drain-source voltage
800
800
V
Switched Mode Power Supplies
I
D
Drain current (DC)
2.0
1.7
A
(SMPS), motor control, welding,
P
tot
Total power dissipation
30
30
W
DC/DC and AC/DC converters, and
R
DS(ON)
Drain-source on-state
3
4
in general purpose switching
resistance
applications.
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-
800
V
V
DGR
Drain-gate voltage
R
GS
= 20 k
-
800
V
V
GS
Gate-source voltage
-
-
30
V
-800A
-800B
I
D
Drain current (DC)
T
hs
= 25 C
-
2.0
1.7
A
I
D
Drain current (DC)
T
hs
= 100 C
-
1.3
1.1
A
I
DM
Drain current (pulse peak value)
T
hs
= 25 C
-
8
6.8
A
P
tot
Total power dissipation
T
hs
= 25 C
-
30
W
T
stg
Storage temperature
-
- 55
150
C
T
j
Junction Temperature
-
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
4.16
K/W
heatsink
R
th j-a
Thermal resistance junction to
-
55
-
K/W
ambient
1 2 3
case
d
g
s
May 1995
1
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS
= 0 V; I
D
= 0.25 mA
800
-
-
V
voltage
V
GS(TO)
Gate threshold voltage
V
DS
= V
GS
; I
D
= 1 mA
2.1
3.0
4.0
V
I
DSS
Zero gate voltage drain current
V
DS
= 800 V; V
GS
= 0 V; T
j
= 25 C
-
2
20
A
I
DSS
Zero gate voltage drain current
V
DS
= 800 V; V
GS
= 0 V; T
j
=125 C
-
0.1
1.0
mA
I
GSS
Gate source leakage current
V
GS
=
30 V; V
DS
= 0 V
-
10
100
nA
R
DS(ON)
Drain-source on-state
V
GS
= 10 V;
BUK446-800A
-
2.7
3.0
resistance
I
D
= 1.5 A
BUK446-800B
-
3.5
4.0
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS
= 25 V; I
D
= 1.5 A
3.0
4.3
-
S
C
iss
Input capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
1000
1250
pF
C
oss
Output capacitance
-
80
120
pF
C
rss
Feedback capacitance
-
30
50
pF
t
d on
Turn-on delay time
V
DD
= 30 V; I
D
= 2.3 A;
-
10
25
ns
t
r
Turn-on rise time
V
GS
= 10 V; R
GS
= 50
;
-
50
70
ns
t
d off
Turn-off delay time
R
gen
= 50
-
130
150
ns
t
f
Turn-off fall time
-
40
60
ns
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
65% ; clean and dustfree
-
1500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
12
-
pF
heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
-
-
2.0
A
current
I
DRM
Pulsed reverse drain current
-
-
-
8
A
V
SD
Diode forward voltage
I
F
= 2.0 A ; V
GS
= 0 V
-
1.0
1.3
V
t
rr
Reverse recovery time
I
F
= 2.0 A; -dI
F
/dt = 100 A/
s;
-
1800
-
ns
Q
rr
Reverse recovery charge
V
GS
= 0 V; V
R
= 100 V
-
12
-
C
May 1995
2
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
hs
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
hs
); conditions: V
GS
10 V
Fig.3. Safe operating area. T
hs
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C.
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-07
1E-05
1E-03
1E-01
1E+01
t / s
Zth / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
D =
BUKx46-hv
D =
t
p
t
p
T
T
P
t
D
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
4
8
12
16
20
24
28
BUK4y6-800A
VDS / V
8
6
4
2
0
4
4.2
4.4
4.6
4.8
5
6
10
ID / A
VGS / V =
10
1000
VDS / V
100
10
1
0.1
0.01
DC
BUK446-800A,B
100
ID / A
A
tp = 10 us
100 us
1 ms
10 ms
100 ms
B
RDS(ON) = VDS/ID
0
2
4
6
BUK4y6-800A
ID / A
10
8
6
4
2
0
4
4.2
4.4
4.6
4.8
5
10
RDS(ON) / Ohm
VGS / V =
May 1995
3
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
j
= 25 C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 1.5 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
BUK4y6-800A
VGS / V
8
6
4
2
0
ID / A
25
150
Tj / C =
-60
-40
-20
0
20
40
60
80
100
120
140
Tj / C
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
2
4
6
8
BUK4y6-800A
ID / A
7
6
5
4
3
2
1
0
gfs / S
0
1
2
3
4
VGS / V
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-40
-20
0
20
40
60
80
100 120 140
Tj / C
Normalised RDS(ON) = f(Tj)
2
1
0
a
0
20
40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
1000
10000
BUK4y6-800
May 1995
4
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 4 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
0
20
40
QG / nC
VGS / V
12
10
8
6
4
2
0
VDS / V =160
640
BUK4y6-800
0
1
2
BUK4y6-800A
VSDS / V
IF / A
10
5
0
Tj / C = 150
25
May 1995
5
Rev 1.200
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