BUT12AX
Silicon diffused power transistor
Rev. 01 -- 16 June 2004
Product data
M3D308
1.
Product profile
1.1 Description
High voltage, high speed, NPN power transistor in a plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data
2.
Pinning information
s
Isolated package
s
Fast switching.
s
Inverters
s
Switching regulators
s
Motor control systems
s
DC-to-DC converters.
s
V
CESM
1000 V
s
I
C
8 A
s
P
tot
23 W
s
t
f
0.8
s.
Table 1:
Pinning - SOT186A (TO-220F), simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
base (b)
SOT186A (TO-220F)
2
collector (c)
3
emitter (e)
mb
mounting base;
isolated
MBK110
1
mb
2 3
3
2
1
MBB008
Philips Semiconductors
BUT12AX
Silicon diffused power transistor
Product data
Rev. 01 -- 16 June 2004
2 of 12
9397 750 13442
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3.
Ordering information
4.
Limiting values
[1]
Mounted without heatsink compound.
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BUT12AX
TO-220F
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3 leads.
SOT186A
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
CESM
peak collector-emitter voltage
V
BE
= 0 V
-
1000
V
V
CEO
collector-emitter voltage
base open circuit
-
450
V
I
C
collector current
Figure 2
and
3
-
8
A
I
Csat
collector saturation current
-
5
A
I
CM
peak collector current
Figure 3
-
20
A
I
B
base current (DC)
-
4
A
I
BM
peak base current
-
6
A
P
tot
total power dissipation
T
h
= 25
C;
Figure 1
[1]
-
23
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
+150
C
Philips Semiconductors
BUT12AX
Silicon diffused power transistor
Product data
Rev. 01 -- 16 June 2004
3 of 12
9397 750 13442
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
V
BE
=
-
1 V to
-
5 V; T
h
= 100
C.
Fig 1.
Normalized total power dissipation as a
function of heatsink temperature.
Fig 2.
Reverse bias safe operating area; continuous
collector current as a function of
collector-emitter voltage.
T
h
= 25
C
1 - Region of permissible DC operation.
2 - Permissible extension for repetitive operation.
Fig 3.
Forward bias safe operating area; continuous and peak collector currents as a function of
collector-emitter voltage.
03aa13
0
40
80
120
0
50
100
150
200
T
h
(
C)
P
der
(%)
10
0
400
IC
(A)
1200
VCE (V)
0
003aaa454
800
2
4
6
8
P
der
P
tot
P
tot 25 C
(
)
-----------------------
100%
=
1
10
1
10
2
10
3
VCE (V)
10
10
-
1
10
2
10
-
2
IC
(A)
ICM
IC
003aaa455
2
1
Philips Semiconductors
BUT12AX
Silicon diffused power transistor
Product data
Rev. 01 -- 16 June 2004
4 of 12
9397 750 13442
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5.
Thermal characteristics
[1]
External heatsink connected to mounting base.
6.
Characteristics
[1]
Measured with a half-sinewave voltage.
[2]
turn-off storage time
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-h)
thermal resistance from junction to heatsink
Mounted without heatsink
compound
[1]
-
-
5.5
K/W
Mounted with heatsink
compound
[1]
-
-
3.9
K/W
R
th(j-a)
thermal resistance from junction to ambient
-
55
-
K/W
Table 5:
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
CEOsus
collector-emitter sustaining voltage
I
C
= 100 mA; I
Boff
= 0 A; L = 25 mH;
Figure 9
and
10
400
-
-
V
V
CEsat
collector-emitter saturation voltage
I
C
= 5 A; I
B
= 1 A;
Figure 5
-
-
1.5
V
V
BEsat
base-emitter saturation voltage
I
C
= 5 A; I
B
= 1 A;
Figure 4
-
-
1.5
V
I
CES
collector-emitter cut-off current
V
CE
= V
CESM
; V
BE
= 0 V
T
j
= 25
C
[1]
-
-
1
mA
T
j
= 125
C
[1]
-
-
3
mA
h
FE
DC current gain
V
CE
= 5 V;
Figure 8
I
C
= 10 mA
10
18
35
I
C
= 1 A
10
20
35
Dynamic characteristics
t
on
turn-on time
I
Con
= 5 A; I
Bon
= I
Boff
= 1 A;
resistive load;
Figure 11
and
12
-
-
1
s
t
s
carrier storage time
I
Con
= 5 A; I
Bon
= I
Boff
= 1 A;
resistive load;
Figure 11
and
12
[2]
-
-
4
s
I
Con
= 5 A; I
Bon
= 1 A;
V
CL
= 250 V; T
mb
= 100
C;
inductive load;
Figure 13
and
14
-
1.9
2.5
s
t
f
fall time
I
Con
= 5 A; I
Bon
= I
Boff
= 1 A;
resistive load;
Figure 11
and
12
-
-
0.8
s
I
Con
= 5 A; I
Bon
= 1 A; V
CL
= 300 V;
T
mb
= 100
C; inductive load;
Figure 13
and
14
-
200
300
ns
Philips Semiconductors
BUT12AX
Silicon diffused power transistor
Product data
Rev. 01 -- 16 June 2004
5 of 12
9397 750 13442
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
C and 100
C
T
j
= 25
C and 100
C
Fig 4.
Base-emitter saturation voltage as a function of
collector current; typical values.
Fig 5.
Collector-emitter saturation voltage as a
function of collector current; typical values.
T
j
= 25
C
Fig 6.
Base-emitter voltage as a function of base
current; typical values.
Fig 7.
Collector-emitter saturation voltage as a
function base current; typical and maximum
values.
0
2.0
10
-
1
10
2
1
IC (A)
VBEsat
(V)
10
0.5
1.5
1.0
003aaa456
Tj = 25 C
Tj = 100 C
0
2.0
10
-
1
10
2
1
IC (A)
VCEsat
(V)
10
0.5
1.5
1.0
Tj = 25 C
Tj = 100 C
003aaa457
3
IB (A)
1.4
0.8
0
VBE
(V)
1.2
1.0
2
1
003aaa458
IC = 8 A
6 A
3 A
10
-1
10
-1
1
10
1
VCEsat
(V)
IB (A)
10
IC = 3 A
6 A
8 A
typ
max
003aaa459
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