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Электронный компонент: BUW11AF

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DATA SHEET
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14
DISCRETE SEMICONDUCTORS
BUW11F; BUW11AF
Silicon diffused power transistors
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT199 package.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
mb
mounting base;
electrically isolated
ook, halfpage
1
2
3
MSB012
Front view
Fig.1 Simplified outline (SOT199) and symbol.
handbook, halfpage
3
2
1
MBB008
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUW11F
850
V
BUW11AF
1000
V
V
CEO
collector-emitter voltage
open base
BUW11F
400
V
BUW11AF
450
V
V
CEsat
collector-emitter saturation voltage
1.5
V
I
Csat
collector saturation current
BUW11F
3
A
BUW11AF
2.5
A
I
C
collector current (DC)
see Figs 2 and 4
5
A
I
CM
collector current (peak value)
t
p
< 20 ms; see Fig.2
10
A
P
tot
total power dissipation
T
h
25
C; see Fig.3
32
W
t
f
fall time
resistive load; see Figs 8 and 9
0.8
s
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
THERMAL CHARACTERISTICS
Notes
1. Mounted without heatsink compound and 30
5 N force on centre of package.
2. Mounted with heatsink compound and 30
5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Mounted without heatsink compound and 30
5 N force on centre of package.
2. Mounted with heatsink compound and 30
5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to external heatsink note 1
3.95
K/W
note 2
3.05
K/W
R
th j-a
thermal resistance from junction to ambient
35
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUW11F
-
850
V
BUW11AF
-
1000
V
V
CEO
collector-emitter voltage
open base
BUW11F
-
400
V
BUW11AF
-
450
V
I
Csat
collector saturation current
BUW11F
-
3
A
BUW11AF
-
2.5
A
I
C
collector current (DC)
see Figs 2 and 4
-
5
A
I
CM
collector current (peak value)
t
p
< 20 ms; see Fig.2
-
10
A
I
B
base current (DC)
-
2
A
I
BM
base current (peak value)
t
p
< 20 ms
-
4
A
P
tot
total power dissipation
T
h
25
C; see Fig.3; note 1
-
32
W
T
h
25
C; see Fig.3; note 2
-
41
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
V
isolM
isolation voltage from all terminals to external heatsink (peak value)
-
1500
V
C
isol
isolation capacitance from collector to external heatsink
-
21
pF
1997 Aug 14
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage
I
C
= 100 mA; I
Boff
= 0; L = 25 mH;
see Figs 5 and 6
BUW11F
400
-
-
V
BUW11AF
450
-
-
V
V
CEsat
collector-emitter saturation voltage
BUW11F
I
C
= 3 A; I
B
= 600 mA
-
-
1.5
V
BUW11AF
I
C
= 2.5 A; I
B
= 500 mA
-
-
1.5
V
V
BEsat
base-emitter saturation voltage
BUW11F
I
C
= 3 A; I
B
= 600 mA
-
-
1.4
V
BUW11AF
I
C
= 2.5 A; I
B
= 500 mA
-
-
1.4
V
I
Csat
collector saturation current
V
CE
= 1.5 V
BUW11F
-
-
3
A
BUW11AF
-
-
2.5
A
I
CES
collector-emitter cut-off current
V
CE
= V
CESMmax
; V
BE
= 0; note 1
-
-
1
mA
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
C; note 1
-
-
2
mA
I
EBO
emitter-base cut-off current
V
EB
= 9 V; I
C
= 0
-
-
10
mA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 5 mA; see Fig.7
10
18
35
V
CE
= 5 V; I
C
= 0.5 A; see Fig.7
10
20
35
Switching times resistive load (Figs 8 and 9)
t
on
turn-on time
BUW11F
I
Con
= 3 A; I
Bon
=
-
I
Boff
= 600 mA
-
-
1
s
BUW11AF
I
Con
= 2.5 A; I
Bon
=
-
I
Boff
= 500 mA
-
-
1
s
t
s
storage time
BUW11F
I
Con
= 3 A; I
Bon
=
-
I
Boff
= 600 mA
-
-
4
s
BUW11AF
I
Con
= 2.5 A; I
Bon
=
-
I
Boff
= 500 mA
-
-
4
s
t
f
fall time
BUW11F
I
Con
= 3 A; I
Bon
=
-
I
Boff
= 600 mA
-
-
0.8
s
BUW11AF
I
Con
= 2.5 A; I
Bon
=
-
I
Boff
= 500 mA
-
-
0.8
s
Switching times inductive load (Figs 10 and 11)
t
s
storage time
BUW11F
I
Con
= 3 A; I
B
= 600 mA;
V
CL
= 250 V; T
c
= 100
C
-
2
2.5
s
BUW11AF
I
Con
= 2.5 A; I
B
= 500 mA;
V
CL
= 300 V; T
c
= 100
C
-
2
2.5
s
t
f
fall time
BUW11F
I
Con
= 3 A; I
B
= 600 mA;
V
CL
= 250 V; T
c
= 100
C
-
200
300
ns
BUW11AF
I
Con
= 2.5 A; I
B
= 500 mA;
V
CL
= 300 V; T
c
= 100
C
-
200
300
ns
1997 Aug 14
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
Fig.2 Forward bias SOAR.
Mounted without heatsink compound and 30
5 N force on centre of package.
T
mb
< 25
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
handbook, full pagewidth
MGB930
1
10
1
10
2
10
3
10
4
I
VCE (V)
10
10
-
1
10
2
10
-
2
10
-
4
10
-
3
IC
(A)
ICM max
IC max
BUW11F
BUW11AF
II