1.
Product profile
1.1 General description
PNP low V
CEsat
transistor in a SOT54 (SC-43/TO-92) plastic package.
1.2 Features
s
SOT54 package
s
Low collector-emitter saturation voltage V
CEsat
s
High collector current capability I
C
and I
CM
s
High efficiency leading to less heat generation.
1.3 Applications
s
Major application segments:
x
Automotive 42 V power
x
Telecom infrastructure
x
Industrial.
s
Peripheral driver:
x
Driver in low supply voltage applications (e.g. lamps and LEDs)
x
Inductive load driver (e.g. relays, buzzers and motors).
s
DC-to-DC converter.
1.4 Quick reference data
PBSS9110S
100 V, 1 A PNP low V
CEsat
(BISS) transistor
Rev. 01 -- 7 June 2004
Product data sheet
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
CEO
collector-emitter voltage
-
-
-
100
V
I
C
collector current (DC)
-
-
-
1
A
I
CM
peak collector current
-
-
-
3
A
R
CEsat
equivalent on-resistance
-
-
320
m
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Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 7 June 2004
2 of 12
Philips Semiconductors
PBSS9110S
100 V, 1 A PNP low V
CEsat
(BISS) transistor
2.
Pinning information
3.
Ordering information
4.
Marking
[1]
Made in China.
Table 2:
Discrete pinning
Pin
Description
Simplified outline
Symbol
1
base
2
collector
3
emitter
1
3
2
sym029
2
3
1
Table 3:
Ordering information
Type number
Package
Name
Description
Version
PBSS9110S
-
plastic single-ended leaded (through hole) package; 3 leads
SOT54
Table 4:
Marking
Type number
Marking code
PBSS9110S
S9110S
[1]
9397 750 12843
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 7 June 2004
3 of 12
Philips Semiconductors
PBSS9110S
100 V, 1 A PNP low V
CEsat
(BISS) transistor
5.
Limiting values
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
CBO
collector-base voltage
open emitter
-
-
120
V
V
CEO
collector-emitter voltage
open base
-
-
100
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
CM
peak collector current
T
j(max)
-
-
3
A
I
C
collector current (DC)
-
-
1
A
I
B
base current (DC)
-
-
0.3
A
P
tot
total power dissipation
T
amb
25
C
[1]
-
830
mW
T
j
junction temperature
-
150
C
T
amb
operating ambient
temperature
-
65
+150
C
T
stg
storage temperature
-
65
+150
C
(1) 1 cm
2
collector mounting pad.
(2) Standard footprint.
Fig 1.
Power derating curves.
T
amb
(
C)
0
160
120
40
80
001aaa816
400
600
200
800
1000
P
tot
(mW)
0
(1)
(2)
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Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 7 June 2004
4 of 12
Philips Semiconductors
PBSS9110S
100 V, 1 A PNP low V
CEsat
(BISS) transistor
6.
Thermal characteristics
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
R
th(j-a)
thermal resistance from junction to ambient in free air
[1]
150
K/W
Mounted on FR4 PCB; standard footprint.
(1)
= 1.
(2)
= 0.75.
(3)
= 0.5.
(4)
= 0.33.
(5)
= 0.2.
(6)
= 0.1.
(7)
= 0.05.
(8)
= 0.02.
(9)
= 0.01.
(10)
= 0.
Fig 2.
Transient thermal impedance as a function of pulse time; typical values.
001aaa817
10
1
10
2
10
3
Z
th
(K/W)
10
-
1
10
-
5
10
10
-
2
10
-
4
10
2
10
-
1
t
p
(s)
10
-
3
10
3
1
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
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Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 7 June 2004
5 of 12
Philips Semiconductors
PBSS9110S
100 V, 1 A PNP low V
CEsat
(BISS) transistor
7.
Characteristics
[1]
Pulse test: t
p
300
s;
0.02.
Table 7:
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I
CBO
collector-base cut-off
current
V
CB
=
-
80 V; I
E
= 0 A
-
-
-
100
nA
V
CB
=
-
80 V; I
E
= 0 A;
T
j
= 150
C
-
-
-
50
A
I
CES
collector-emitter
cut-off current
V
CE
=
-
80 V; V
BE
= 0 V
-
-
-
100
nA
I
EBO
emitter-base cut-off
current
V
EB
=
-
4 V; I
C
= 0 A
-
-
-
100
nA
h
FE
DC current gain
V
CE
=
-
5 V; I
C
=
-
1 mA
150
-
-
V
CE
=
-
5 V; I
C
=
-
250 mA
150
-
-
V
CE
=
-
5 V; I
C
=
-
0.5 A
[1]
150
-
450
V
CE
=
-
5 V; I
C
=
-
1 A
[1]
125
-
-
V
CEsat
collector-emitter
saturation voltage
I
C
=
-
250 mA; I
B
=
-
25 mA
-
-
-
120
mV
I
C
=
-
500 mA; I
B
=
-
50 mA
-
-
-
180
mV
I
C
=
-
1 A; I
B
=
-
100 mA
-
-
-
320
mV
R
CEsat
equivalent
on-resistance
I
C
=
-
1 A; I
B
=
-
100 mA
[1]
-
170
320
m
V
BEsat
base-emitter
saturation voltage
I
C
=
-
1 A; I
B
=
-
100 mA
-
-
-
1.1
V
V
BEon
base-emitter turn-on
voltage
I
C
=
-
1 A; V
CE
=
-
5 V
-
-
-
1.0
V
f
T
transition frequency
I
C
=
-
50 mA; V
CE
=
-
10 V;
f = 100 MHz
100
-
-
MHz
C
c
collector capacitance
I
E
= I
e
= 0 A; V
CB
=
-
10 V;
f = 1 MHz
-
-
17
pF
Philips Semiconductors
PBSS9110S
100 V, 1 A PNP low V
CEsat
(BISS) transistor
9397 750 12843
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 7 June 2004
6 of 12
V
CE
=
-
10 V.
(1) T
amb
= 100
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
V
CE
=
-
10 V.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 100
C.
Fig 3.
DC current gain as a function of collector
current; typical values.
Fig 4.
Base-emitter voltage as a function of collector
current; typical values.
I
C
/I
B
= 10.
(1) T
amb
= 100
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
T
amb
= 25
C.
(1) I
C
/I
B
= 50.
(2) I
C
/I
B
= 20.
Fig 5.
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig 6.
Collector-emitter saturation voltage as a
function of collector current; typical values.
001aaa376
200
400
600
h
FE
0
I
C
(mA)
-
10
-
1
-
10
4
-
10
3
-
1
-
10
2
-
10
(1)
(2)
(3)
001aaa377
-
0.4
-
0.8
-
1.2
V
BE
(V)
0
I
C
(mA)
-
10
-
1
-
10
4
-
10
3
-
1
-
10
2
-
10
(1)
(2)
(3)
001aaa378
I
C
(mA)
-
10
-
1
-
10
4
-
10
3
-
1
-
10
2
-
10
-
10
-
1
-
1
V
CEsat
(V)
-
10
-
2
(1)
(2)
(3)
001aaa380
I
C
(mA)
-
10
-
1
-
10
4
-
10
3
-
1
-
10
2
-
10
-
10
-
1
-
1
V
CEsat
(V)
-
10
-
2
(1)
(2)
9397 750 12843
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 7 June 2004
7 of 12
Philips Semiconductors
PBSS9110S
100 V, 1 A PNP low V
CEsat
(BISS) transistor
I
C
/I
B
= 10.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 100
C.
I
C
/I
B
= 20.
T
amb
= 25
C.
Fig 7.
Base-emitter saturation voltage as a function of
collector current; typical values.
Fig 8.
Base-emitter saturation voltage as a function of
collector current; typical values.
I
C
/I
B
= 10.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 100
C.
T
amb
= 25
C.
(1) I
C
/I
B
= 50.
(2) I
C
/I
B
= 20.
Fig 9.
Equivalent on-resistance as a function of
collector current; typical values.
Fig 10. Equivalent on-resistance as a function of
collector current; typical values.
001aaa381
I
C
(mA)
-
10
-
1
-
10
4
-
10
3
-
1
-
10
2
-
10
-
1
-
10
V
BEsat
(V)
-
10
-
1
(1)
(2)
(3)
001aaa379
I
C
(mA)
-
10
-
1
-
10
4
-
10
3
-
1
-
10
2
-
10
-
1
-
10
V
BEsat
(V)
-
10
-
1
001aaa382
I
C
(mA)
-
10
-
1
-
10
4
-
10
3
-
1
-
10
2
-
10
1
10
10
2
10
3
RCEsat
(
)
10
-
1
(1)
(2)
(3)
001aaa383
I
C
(mA)
-
10
-
1
-
10
4
-
10
3
-
1
-
10
2
-
10
1
10
10
2
10
3
RCEsat
(
)
10
-
1
(1)
(2)
9397 750 12843
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 7 June 2004
8 of 12
Philips Semiconductors
PBSS9110S
100 V, 1 A PNP low V
CEsat
(BISS) transistor
(1) I
B
=
-
45 mA.
(2) I
B
=
-
40.5 mA.
(3) I
B
=
-
36 mA.
(4) I
B
=
-
31.5 mA.
(5) I
B
=
-
27 mA.
(6) I
B
=
-
22.5 mA.
(7) I
B
=
-
18 mA.
(8) I
B
=
-
13.5 mA.
(9) I
B
=
-
9 mA.
(10) I
B
=
-
4.5 mA.
Fig 11. Collector current as a function of collector-emitter voltage; typical values.
V
CE
(V)
0
-
5
-
4
-
2
-
3
-
1
001aaa384
-
0.8
-
1.2
-
0.4
-
1.6
-
2
I
C
(A)
0
(1)
(2)
(8)
(10)
(9)
(3)
(6) (7)
(4) (5)
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Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 7 June 2004
9 of 12
Philips Semiconductors
PBSS9110S
100 V, 1 A PNP low V
CEsat
(BISS) transistor
8.
Package outline
Fig 12. Package outline.
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
9397 750 12843
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 7 June 2004
10 of 12
Philips Semiconductors
PBSS9110S
100 V, 1 A PNP low V
CEsat
(BISS) transistor
9.
Revision history
Table 8:
Revision history
Document ID
Release date
Data sheet status
Change notice
Order number
Supersedes
PBSS9110S_1
20040607
Product data
-
9397 750 12843
-
Philips Semiconductors
PBSS9110S
100 V, 1 A PNP low V
CEsat
(BISS) transistor
9397 750 12843
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 7 June 2004
11 of 12
10. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status `Production'),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level
Data sheet status
[1]
Product status
[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 7 June 2004
Document order number: 9397 750 12843
Published in The Netherlands
Philips Semiconductors
PBSS9110S
100 V, 1 A PNP low V
CEsat
(BISS) transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13
Contact information . . . . . . . . . . . . . . . . . . . . 11
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