Philips Semiconductors
Product specification
Rectifier diodes
PBYR745 series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R
= 40 V/ 45 V
Reverse surge capability
High thermal cycling performance
I
F(AV)
= 7.5 A
Low thermal resistance
V
F
0.57 V
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Schottky rectifier diodes in a plastic
PIN
DESCRIPTION
envelope. Intended for use as
output rectifiers in low voltage, high
1
cathode
frequency switched mode power
supplies.
2
anode
The PBYR745 series is supplied in
tab
cathode
the conventional leaded SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR7
40
45
V
RRM
Peak repetitive reverse
-
40
45
V
voltage
V
RWM
Working peak reverse
-
40
45
V
voltage
V
R
Continuous reverse voltage
T
mb
114 C
-
40
45
V
I
F(AV)
Average rectified forward
square wave;
= 0.5; T
mb
136 C
-
7.5
A
current
I
FRM
Repetitive peak forward
square wave;
= 0.5; T
mb
136 C
-
15
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current
t = 8.3 ms
-
150
A
sinusoidal; T
j
= 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
-
3
K/W
to mounting base
R
th j-a
Thermal resistance junction
in free air
-
60
-
K/W
to ambient
k
a
1
2
1
tab
2
November 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
PBYR745 series
Schottky barrier
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage
I
F
= 7.5 A; T
j
= 125C
-
0.45
0.57
V
I
F
= 15 A; T
j
= 125C
-
0.65
0.72
V
I
F
= 15 A
-
0.64
0.84
V
I
R
Reverse current
V
R
= V
RWM
-
0.13
1
mA
V
R
= V
RWM
; T
j
= 100C
-
17
22
mA
C
d
Junction capacitance
V
R
= 5 V; f = 1 MHz, T
j
= 25C to 125C
-
270
-
pF
November 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
PBYR745 series
Schottky barrier
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
D.
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current; I
R
= f(V
R
);
parameter T
j
Fig.5. Typical junction capacitance; C
d
= f(V
R
);
f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance; Z
th j-mb
= f(t
p
).
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
8
D = 1.0
0.5
0.2
0.1
PBYR745
Rs = 0.02 Ohms
Vo = 0.42 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) (C)
150
147
144
141
138
135
132
129
126
D =
t
p
t
p
T
T
t
I
0
25
50
100
10
1
0.1
0.01
Reverse current, IR (mA)
Reverse voltage, VR (V)
PBYR745
50 C
75 C
100 C
125 C
Tj = 25 C
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
a = 1.57
1.9
2.2
2.8
4
PBYR745
Rs = 0.02 Ohms
Vo = 0.42 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
150
147
144
141
138
135
132
Tmb(max) / C
129
126
1
10
100
10
1000
100
Cd / pF
VR / V
PBYR745
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
10
20
30
40
50
PBYR745
Forward voltage, VF (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
0.01
0.1
1
10
PBYR745
1us
10us
100us
1ms
10ms
100ms
1s
10s
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
November 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
PBYR745 series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
0,9 max (2x)
13,5
min
5,08
1
2
November 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
PBYR745 series
Schottky barrier
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1998
5
Rev 1.300
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