1.
Product profile
1.1 General description
NPN resistor-equipped transistor. PNP complement: PDTA144VT.
1.2 Features
1.3 Applications
1.4 Quick reference data
2.
Pinning information
PDTC144VT
NPN resistor-equipped transistor; R1 = 47 k
, R2 = 10 k
Rev. 01 -- 5 March 2004
Objective data sheet
s
Built-in bias resistors
s
Reduces component count
s
Simplifies circuit design
s
Reduces pick and place costs.
s
General purpose switching and
amplification
s
Circuit driver.
s
Inverter and interface circuits
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
CEO
collector-emitter voltage
-
-
50
V
I
O
output current (DC)
-
-
100
mA
R1
bias resistor
-
47
-
k
R2
bias resistor
-
10
-
k
Table 2:
Discrete pinning
Pin
Description
Simplified outline
Symbol
1
base
2
emitter
3
collector
Top view
1
2
3
sym007
3
2
1
R1
R2
9397 750 12556
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 5 March 2004
2 of 7
Philips Semiconductors
PDTC144VT
NPN resistor-equipped transistor; R1 = 47 k
, R2 = 10 k
3.
Ordering information
4.
Marking
[1]
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
5.
Limiting values
[1]
Refer to standard mounting conditions.
6.
Thermal characteristics
[1]
Refer to standard mounting conditions.
Table 3:
Ordering information
Type number
Package
Name
Description
Version
PDTC144VT
-
plastic surface mounted package; 3 leads
SOT23
Table 4:
Marking
Type number
Marking code
PDTC144VT
*AA
[1]
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
CBO
collector-base voltage
open emitter
-
50
V
V
CEO
collector-emitter voltage
open base
-
50
V
V
EBO
emitter-base voltage
open collector
-
15
V
V
I
input voltage
positive
-
+40
V
negative
-
-
15
V
I
O
output current (DC)
-
100
mA
I
CM
peak collector current
-
100
mA
P
tot
total power dissipation
T
amb
25
C
[1]
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient
temperature
-
65
+150
C
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
[1]
500
K/W
9397 750 12556
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 5 March 2004
3 of 7
Philips Semiconductors
PDTC144VT
NPN resistor-equipped transistor; R1 = 47 k
, R2 = 10 k
7.
Characteristics
Table 7:
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I
CBO
collector-base cut-off
current
V
CB
= 50 V; I
E
= 0 A
-
-
100
nA
I
CEO
collector-emitter
cut-off current
V
CE
= 30 V; I
B
= 0 A
-
-
1
A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
C
-
-
50
A
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A
-
-
150
A
h
FE
DC current gain
V
CE
= 5 V; I
C
= 5 mA
40
-
-
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
-
150
mV
V
i(off)
input-off voltage
I
C
= 100
A; V
CE
= 5 V
-
<tbd>
1
V
V
i(on)
input-on voltage
I
C
= 2 mA; V
CE
= 300 mV
6
<tbd>
-
V
R1
input resistor
33
47
61
k
R2
/
R1
resistor ratio
0.17
0.21
0.26
C
c
collector capacitance
V
CB
= 10 V; I
E
= I
e
= 0 A;
f = 1 MHz
-
-
<tbd>
pF
9397 750 12556
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 5 March 2004
4 of 7
Philips Semiconductors
PDTC144VT
NPN resistor-equipped transistor; R1 = 47 k
, R2 = 10 k
8.
Package outline
Fig 1.
Package outline.
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
9397 750 12556
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 5 March 2004
5 of 7
Philips Semiconductors
PDTC144VT
NPN resistor-equipped transistor; R1 = 47 k
, R2 = 10 k
9.
Revision history
Table 8:
Revision history
Document ID
Release date
Data sheet status
Change notice
Order number
Supersedes
PDTC144VT_1
20040305
Objective data
-
9397 750 12556
-
Philips Semiconductors
PDTC144VT
NPN resistor-equipped transistor; R1 = 47 k
, R2 = 10 k
9397 750 12556
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 5 March 2004
6 of 7
10. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status `Production'),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level
Data sheet status
[1]
Product status
[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 5 March 2004
Document order number: 9397 750 12556
Published in The Netherlands
Philips Semiconductors
PDTC144VT
NPN resistor-equipped transistor; R1 = 47 k
, R2 = 10 k
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
7
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4
9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 5
10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 6
11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
13
Contact information . . . . . . . . . . . . . . . . . . . . . 6
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