1.
Product profile
1.1 General description
Combination of an NPN transistor with low V
CEsat
and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package. PNP complement: PMEM4020APD.
1.2 Features
s
600 mW total power dissipation
s
High current capability up to 2 A
s
Reduces printed-circuit board area required
s
Reduces pick and place costs
s
Small plastic SMD package
s
Transistor
x
Low collector-emitter saturation voltage.
s
Diode
x
Ultra high-speed switching
x
Very low forward voltage
x
Guard ring protected.
1.3 Applications
s
DC-to-DC converters
s
Inductive load drivers
s
General purpose load drivers
s
Reverse polarity protection circuits
s
MOSFET drivers.
1.4 Quick reference data
PMEM4020AND
NPN transistor/Schottky rectifier module
Rev. 01 -- 4 October 2004
Product data sheet
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
NPN transistor
V
CEO
collector-emitter voltage
open base
-
-
40
V
I
C
collector current (DC)
continuous;
T
s
55
C
[1]
-
-
2
A
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Product data sheet
Rev. 01 -- 4 October 2004
2 of 13
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
[1]
Soldering point of collector or cathode tab.
2.
Pinning information
3.
Ordering information
4.
Marking
5.
Limiting values
Schottky barrier rectifier
V
R
continuous reverse voltage
-
-
40
V
I
F
continuous forward current
-
-
1
A
Table 1:
Quick reference data
...continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 2:
Discrete pinning
Pin
Description
Simplified outline
Symbol
1
emitter
2
not connected
3
cathode
4
anode
5
base
6
collector
SOT457
1
3
2
4
5
6
sym041
3
6
1
4
5
Table 3:
Ordering information
Type number
Package
Name
Description
Version
PMEM4020AND
SC-74
plastic surface mounted package; 6 leads
SOT457
Table 4:
Marking
Type number
Marking code
PMEM4020AND
D2
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
NPN transistor
V
CBO
collector-base voltage
open emitter
-
40
V
V
CEO
collector-emitter voltage
open base
-
40
V
V
EBO
emitter-base voltage
open collector
-
5
V
9397 750 13708
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Product data sheet
Rev. 01 -- 4 October 2004
3 of 13
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
[1]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2]
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm
2
mounting pad for both
collector and cathode.
[3]
Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
[4]
Soldering point of collector or cathode tab.
I
C
collector current (DC)
continuous
[1]
-
0.95
A
continuous
[2]
-
1.30
A
continuous
[3]
-
1.65
A
continuous;
T
s
55
C
[4]
-
2
A
I
CM
peak collector current
-
3
A
I
BM
peak base current
-
1
A
P
tot
total power dissipation
T
amb
25
C
[1]
-
295
mW
T
amb
25
C
[2]
-
400
mW
T
amb
25
C
[3]
-
500
mW
T
s
55
C
[4]
-
1000
mW
T
j
junction temperature
-
150
C
Schottky barrier rectifier
V
R
continuous reverse voltage
-
40
V
I
F
continuous forward voltage
-
1
A
I
FRM
repetitive peak forward
current
t
p
1ms;
0.5
-
3.5
A
I
FSM
non-repetitive peak forward
current
t = 8 ms; square
wave
-
10
A
P
tot
total power dissipation
T
amb
25
C
[1]
-
295
mW
T
amb
25
C
[2]
-
400
mW
T
amb
25
C
[3]
-
500
mW
T
s
55
C
[4]
-
1000
mW
T
j
junction temperature
[2]
-
150
C
Combined device
P
tot
total power dissipation
T
amb
25
C
[2]
-
600
mW
T
stg
storage temperature
-
65
+150
C
T
amb
ambient temperature
[2]
-
65
+150
C
Table 5:
Limiting values
...continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
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Product data sheet
Rev. 01 -- 4 October 2004
4 of 13
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
6.
Thermal characteristics
[1]
For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
[2]
Soldering point of collector or cathode tab.
[3]
Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
[4]
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm
2
mounting pad for both
collector and cathode tab.
[5]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
Table 6:
Thermal characteristics
[1]
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Single device
R
th(j-s)
thermal resistance from
junction to soldering point
in free air
[2]
-
-
95
K/W
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[3]
-
-
250
K/W
[4]
-
-
315
K/W
[5]
-
-
425
K/W
Combined device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[3]
-
-
208
K/W
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Product data sheet
Rev. 01 -- 4 October 2004
5 of 13
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
7.
Characteristics
[1]
Pulse test: t
p
300
s;
0.02.
Table 7:
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
NPN transistor
I
CBO
collector-base cut-off
current
V
CB
= 40 V; I
E
= 0 A
-
-
100
nA
V
CB
= 40 V; I
E
= 0 A;
T
j
= 150
C
-
-
50
A
I
CEO
collector-emitter
cut-off current
V
CE
= 30 V; I
B
= 0 A
-
-
100
nA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A
-
-
100
nA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 1 mA
300
-
-
V
CE
= 5 V; I
C
= 500 mA
300
-
900
V
CE
= 5 V; I
C
= 1 A
200
-
-
V
CE
= 5 V; I
C
= 2 A
[1]
75
-
-
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
= 1 mA
-
-
75
mV
I
C
= 500 mA; I
B
= 50 mA
-
-
100
mV
I
C
= 1 A; I
B
= 100 mA
-
-
190
mV
I
C
= 2 A; I
B
= 200 mA
-
-
400
mV
R
CEsat
equivalent
on-resistance
I
C
= 1 A; I
B
= 100 mA
[1]
-
150
190
m
V
BEsat
base-emitter
saturation voltage
I
C
= 1 A; I
B
= 100 mA
[1]
-
-
1.2
V
V
BEon
base-emitter turn-on
voltage
V
CE
= 5 V; I
C
= 1 A
[1]
-
-
1.1
V
f
T
transition frequency
V
CE
= 10 V; I
C
= 50 mA;
f = 100 MHz
150
-
-
MHz
C
c
collector capacitance
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
-
-
10
pF
Schottky barrier rectifier
V
F
continuous forward
voltage
see
Figure 1
I
F
= 0.1 mA
[1]
-
95
130
mV
I
F
= 1 mA
[1]
-
155
210
mV
I
F
= 10 mA
[1]
-
220
270
mV
I
F
= 100 mA
[1]
-
295
350
mV
I
F
= 1000 mA
[1]
-
540
640
mV
I
R
reverse current
see
Figure 2
V
R
= 10 V
[1]
-
7
20
A
V
R
= 40 V
[1]
-
30
100
A
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz;
see
Figure 3
-
43
48
pF
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Product data sheet
Rev. 01 -- 4 October 2004
6 of 13
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
Schottky barrier rectifier.
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
Schottky barrier rectifier.
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
Fig 1.
Forward current as a function of forward
voltage; typical values.
Fig 2.
Reverse current as a function of reverse
voltage; typical values.
Schottky barrier rectifier;
T
amb
= 25
C; f = 1 MHz.
NPN transistor; V
CE
= 5 V.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values.
Fig 4.
DC current gain as a function of collector
current; typical values.
0.6
0.4
0.2
0
10
3
10
2
10
1
10
-
1
mdb669
I
F
(mA)
V
F
(V)
(1)
(2)
(3)
0
20
10
30
40
V
R
(V)
mdb670
10
5
10
4
10
3
10
2
10
1
I
R
(
A)
(1)
(2)
(3)
0
5
10
20
100
0
80
15
60
40
20
mdb671
V
R
(V)
C
d
(pF)
0
1000
200
400
600
800
mhc077
10
-
1
1
10
h
FE
I
C
(mA)
10
2
10
3
10
4
(1)
(2)
(3)
9397 750 13708
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Product data sheet
Rev. 01 -- 4 October 2004
7 of 13
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
NPN transistor; V
CE
= 5 V.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 150
C.
NPN transistor; I
C
/I
B
= 10.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
Fig 5.
Base-emitter voltage as a function of collector
current; typical values.
Fig 6.
Collector-emitter saturation voltage as a
function of collector current; typical values.
NPN transistor; I
C
/I
B
= 10.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
NPN transistor; V
CE
= 10 V.
Fig 7.
Equivalent on-resistance as a function of
collector current; typical values.
Fig 8.
Transition frequency as a function of collector
current.
10
1
10
-
1
mhc078
10
-
1
1
10
V
BE
(V)
I
C
(mA)
10
3
10
2
10
4
(1)
(2)
(3)
10
3
10
2
10
1
mhc079
1
10
V
CEsat
(mV)
I
C
(mA)
10
2
10
3
10
4
(1)
(2)
(3)
10
1
10
-
1
10
2
mhc080
10
-
1
1
10
R
CEsat
(
)
I
C
(mA)
10
3
10
2
10
4
(1)
(2)
(3)
0
1000
400
0
100
200
300
200
400
f
T
(MHz)
600
800
I
C
(mA)
mhc081
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Product data sheet
Rev. 01 -- 4 October 2004
8 of 13
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
8.
Application information
Fig 9.
DC-to-DC converter.
Fig 10. Inductive load driver (relays, motors and
buzzers) with free-wheeling diode.
mle231
R
load
CONTROLLER
V
OUT
V
IN
mdb577
V
CC
IN
9397 750 13708
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 4 October 2004
9 of 13
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
9.
Package outline
Fig 11. Package outline SOT457 (SC-74).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT457
SC-74
w
B
M
bp
D
e
pin 1
index
A
A1
Lp
Q
detail X
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
c
X
1
3
2
4
5
6
Plastic surface mounted package; 6 leads
SOT457
UNIT
A1
bp
c
D
E
HE
Lp
Q
y
w
v
mm
0.1
0.013
0.40
0.25
3.1
2.7
0.26
0.10
1.7
1.3
e
0.95
3.0
2.5
0.2
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
0.33
0.23
A
1.1
0.9
97-02-28
01-05-04
9397 750 13708
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Product data sheet
Rev. 01 -- 4 October 2004
10 of 13
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
10. Packing information
[1]
For further information and the availability of packing methods, see
Section 15
.
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package
Description
Packing quantity
3000
10000
PMEM4020AND
SOT457
4 mm pitch, 8 mm tape and reel; T1
-115
-135
4 mm pitch, 8 mm tape and reel; T2
-125
-165
9397 750 13708
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Product data sheet
Rev. 01 -- 4 October 2004
11 of 13
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
11. Revision history
Table 9:
Revision history
Document ID
Release date
Data sheet status
Change notice
Order number
Supersedes
PMEM4020AND_1
20041004
Product data sheet
-
9397 750 13708
-
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
9397 750 13708
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Product data sheet
Rev. 01 -- 4 October 2004
12 of 13
12. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status `Production'),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level
Data sheet status
[1]
Product status
[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 4 October 2004
Document order number: 9397 750 13708
Published in The Netherlands
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
16. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8
Application information. . . . . . . . . . . . . . . . . . . 8
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10
Packing information. . . . . . . . . . . . . . . . . . . . . 10
11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
15
Contact information . . . . . . . . . . . . . . . . . . . . 12
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