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Электронный компонент: PPC5001T

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DATA SHEET
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Mar 03
DISCRETE SEMICONDUCTORS
PPC5001T
NPN microwave power transistor
1997 Mar 03
2
Philips Semiconductors
Product specification
NPN microwave power transistor
PPC5001T
FEATURES
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Interdigitated structure provides high emitter efficiency
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
APPLICATIONS
Intended for use in common-collector oscillator circuits in
military and professional applications up to 5 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT447A metal ceramic flange package.
PINNING - SOT447A
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline and symbol.
Marking code: 395
handbook, halfpage
e
c
b
MAM331
Side view
3
2
1
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
C in an oscillator circuit up to 5 GHz; typical values.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
C
(mA)
P
L
(mW)
Class A (CW)
5
20
200
450
1997 Mar 03
3
Philips Semiconductors
Product specification
NPN microwave power transistor
PPC5001T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. At 0.1 mm from the case.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
40
V
V
CER
collector-emitter voltage
R
BE
= 70
-
35
V
V
CEO
collector-emitter voltage
open emitter
-
16
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
C
collector current (DC)
-
0.25
A
P
tot
total power dissipation
T
amb
75
C
-
4
W
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
T
sld
soldering temperature
t
10 s; note 1
-
235
C
Fig.2
Power dissipation derating as a function of
mounting-base temperature.
handbook,
0
50
100
200
5
0
4
150
3
2
1
MGD975
Ptot max
(W)
Tmb (
C)
1997 Mar 03
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PPC5001T
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
mb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
thermal resistance from junction to mounting base
T
j
= 75
C
24
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 24 V; I
E
= 0
-
-
100
A
I
EBO
emitter cut-off current
V
EB
= 1.5 V; I
C
= 0
-
-
200
nA
V
(BR)CBO
collector-base breakdown voltage
I
C
= 500
A; I
E
= 0
40
-
-
V
V
(BR)CER
collector-emitter breakdown voltage
I
C
= 2.5 mA; R
BE
= 70
35
-
-
V
C
cb
collector-base capacitance
V
CB
= 18 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
-
1.4
-
pF
C
ce
collector-emitter capacitance
V
CE
= 18 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
-
0.9
-
pF
C
eb
emitter-base capacitance
V
CB
= 10 V; V
EB
= 1 V;
I
C
= I
E
= 0; f = 1 MHz
-
5.5
-
pF
1997 Mar 03
5
Philips Semiconductors
Product specification
NPN microwave power transistor
PPC5001T
Fig.3 Emitter reflection coefficient.
V
CE
= 20 V; I
C
= 200 mA; Z
o
= 50
.
handbook, full pagewidth
MGL033
0.2
0.5
1
2
5
0.2
0.5
1
2
5
0
0.2
0.5
1
2
5
10
+
j
-
j
8 GHz
7
6
5
10
10
Fig.4 Base reflection coefficient
V
CE
= 20 V; I
C
= 200 mA; Z
o
= 50
.
handbook, full pagewidth
MGL034
0.2
0.5
1
2
5
0.2
0.5
1
2
5
0
0.2
0.5
1
2
5
10
+
j
-
j
5
6
7
8 GHz
10
10