1
Mega Power DualTM
IGBTMOD
1400 Amperes/1200 Volts
CM1400DU-24NF
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
1
Description:
Powerex IGBTMODTM Modules
are designed for use in switching
two IGBT applications. Each
module consists of a half-bridge
configuration, with each transistor
having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
High Power UPS
Large Motor Drives
Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM1400DU-24NF is
a 1200V (V
CES
), 1400 Ampere
Dual IGBTMOD Power Module.
Current Rating
V
CES
Type
Amperes
Volts (x 50)
CM
1400
24
Dimensions
Inches
Millimeters
J
1.50
0.01
38.0
0.25
K
0.16
4.0
L
1.36 +0.04/-0.02 34.6 +1.0/-0.5
M
0.075
0.08
1.9
0.2
P
0.26
6.5
R
M6 Metric
M6
U
0.62
15.7
V
0.71
18.0
A
D
P
(8 PLACES)
L
TC MEASURED POINTS
(THE SIDE OF CU BASEPLATE)
L
M
H
H
H
H
H
H
K
G
U
H
H
E
F
F
C2E1
E2
C1
G2
E2
G1
E2
C
C2E1
C
G
E
E
G
C1
E1
C2
LABEL
V
S
T
B
U
C
J
J
G
G
R (9 PLACES)
Dimensions
Inches
Millimeters
A
5.91
150.0
B
5.10
129.5
C
1.67
0.01
42.5
0.25
D
5.41
0.01
137.5
0.25
E
6.54
166.0
F
2.91
0.01
74.0
0.25
G
1.65
42.0
H
0.55
14.0
Housing Type (J.S.T. MFG. CO. LTD)
S = VHR-2N
T = VHR-5N
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CM1400DU-24NF
Mega Power DualTM IGBTMOD
1400 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM1400DU-24NF
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
C
= 25
C)
I
C
1400
Amperes
Peak Collector Current (T
j
150
C)
I
CM
2800*
Amperes
Emitter Current (T
C
= 25
C)**
I
E
1400
Amperes
Peak Emitter Current**
I
EM
2800*
Amperes
Maximum Collector Dissipation (T
j
< 150
C) (T
C'
= 25
C)
P
C
8920
Watts
Mounting Torque, M6 Mounting Screws
40
in-lb
Mounting Torque, M6 Main Terminal Screw
40
in-lb
Weight (Typical)
1400
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Volts
Static Electrical Characteristics,
T
j
= 25 C
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 140mA, V
CE
= 10V
6
7
8
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 1400A, V
GE
= 15V, T
j
= 25
C
1.9
2.5
Volts
(Without Lead Resistance)
(Chip)
I
C
= 1400A, V
GE
= 15V, T
j
= 125
C
2.1
Volts
Module Lead Resistance
R
(lead)
I
C
= 1400A, Terminal-chip
0.143
m
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 1400A, V
GE
= 15V
7200
nC
Emitter-Collector Voltage**
V
EC
I
E
= 1400A, V
GE
= 0V
3.4
Volts
Dynamic Electrical Characteristics,
T
j
= 25 C
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
220
nF
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V
25
nF
Reverse Transfer Capacitance
C
res
4.7
nF
Inductive
Turn-on Delay Time
t
d(on)
V
CC
= 600V,
400
ns
Load
Rise Time
t
r
I
C
= 1400A, I
E
= 1400A,
300
ns
Switch
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V,
1000
ns
Times
Fall Time
t
f
R
G
= 1.0 ,
300
ns
Diode Reverse Recovery Time**
t
rr
Inductive Load
800
ns
Diode Reverse Recovery Charge**
Q
rr
Switching Operation
100
C
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
3
CM1400DU-24NF
Mega Power DualTM IGBTMOD
1400 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Thermal and Mechanical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c')
Q
Per IGBT 1/2 Module,
0.014
C/W
T
C
Reference Point Under Chip
Thermal Resistance, Junction to Case
R
th(j-c')
D
Per FWDi 1/2 Module, T
C
Reference
0.023
C/W
T
C
Reference Point Under Chip
Contact Thermal Resistance
R
th(c-f)
Per 1/2 Module, Thermal Grease Applied
0.016
C/W
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
10
0
10
2
10
3
10
2
10
1
10
0
10
1
0.5
1.5
1.0 3.0
3.5
2.0
2.5
4.0
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
10
4
EMITTER CURRENT, I
E
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25
C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
3
4
0
400
1200
2
1
0
2800
1600
2400
2000
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
T
j
= 25
C
T
j
= 125
C
V
GE
= 0V
C
ies
C
oes
C
res
I
C
= 560A
I
C
= 2800A
I
C
= 1400A
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
1
2
3
4
5
6
7
8
9 10
V
GE
= 20V
10
11
12
15
13
9
8
T
j
= 25
o
C
COLLECTOR CURRENT, I
C
, (AMPERES)
2000
400
0
1200
1600
800
2400
2800
2000
400
0
1200
1600
800
2400
2800
600
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
8
12
16
20
V
CE
= 10V
T
j
= 25
C
T
j
= 125
C
4
10
-1
4
CM1400DU-24NF
Mega Power DualTM IGBTMOD
1400 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(
j-c)
10
1
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, VGE
20
0
16
12
8
4
0
COLLECTOR CURRENT, I
C
, (AMPERES)
10
4
10
2
10
3
10
3
10
2
10
1
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
2000
4000
10000
8000
6000
V
CC
= 600V
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
=
15V
R
G
= 1.0
T
j
= 125
C
Inductive Load
t
f
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
2
10
3
10
2
10
1
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
t
rr
I
rr
V
CC
= 600V
V
GE
=
15V
R
G
= 1.0
T
j
= 25
C
Inductive Load
V
CC
= 400V
I
C
= 1400A
10
4
10
4
EMITTER CURRENT, I
E
, (AMPERES)
SWITCHING LOSS, E
rr
, (mJ/PULSE)
SWITCHING LOSS VS. EMITTER CURRENT
(TYPICAL)
10
2
10
3
10
4
10
1
10
2
10
3
V
CC
= 600V
V
GE
= 15V
T
j
= 125
C
R
G
= 1.0
Inductive Load
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING LOSS, E
SW(on)
, E
SW(off)
, (mJ/PULSE)
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
10
2
10
3
10
4
10
0
10
2
10
1
10
3
V
CC
= 600V
V
GE
= 15V
T
j
= 125
C
R
G
= 1.0
E
SW(on)
E
SW(off)
Inductive Load
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
= R
th
(NORMALIZED VALUE)
Per Unit Base
R
th(j-c)
= 0.014
C/W (IGBT)
R
th(j-c)
= 0.023
C/W (FWDi)
Single Pulse
T
C
= 25
C
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