2SD1757K
Transistors
Rev.A
1/3
Power Transistor (15V, 0.5A)
2SD1757K
Features
1) Low V
CE(sat)
. (Typ.8mV at I
C
/I
B
= 10/1mA)
2) Optimal for muting.
Absolute maximum ratings (Ta=25
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
15
6.5
0.5
0.2
150
-
55 to
+
150
Unit
V
V
V
A
W
C
C
External dimensions (Unit : mm)
ROHM : SMT3
EIAJ : SC-59
(2) Base
(3) Collector
(1) Emitter
Each lead has same dimensions
0.8
0.15
0to0.1
0.3to0.6
1.1
( 2
)
( 1
)
2.8
1.6
0.4
( 3
)
2.9
1.9
0.95
0.95
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
2SD1757K
SMT3
QRS
AA
T146
3000
Denotes h
FE
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
30
15
6.5
-
-
120
-
-
-
-
-
-
-
-
-
0.1
150
15
-
-
-
0.5
0.5
560
0.4
-
-
V
V
V
A
A
-
V
MHz
pF
I
C
=
50
A
I
C
=
1mA
I
E
=
50
A
V
CB
=
20V
V
EB
=
4V
V
CE
/I
C
=
3V/100mA
I
C
/I
B
=
500mA/50mA
V
CE
=
5V , I
E
=-
50mA , f
=
100MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
2SD1757K
Transistors
Rev.A
2/3
Electrical characteristics curves
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Ground emitter propagation characteristics
0.1
1000
200
500
100
20
50
10
2
5
1
0.2
0.5
0.2
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Ta
=
25
C
V
CE
=
6V
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Ground emitter output characteristics
0
400
500
0
2
4
6
8
1
300
200
100
0
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.3 DC current gain vs. collector current ( )
1
10
20
50
100
200
500
1000
2
5
10
20
50 100 200
500 1000
Ta=25
C
V
CE
=
5V
3V
V
CE
=
1V
I
B
=
0
A
Tc
=
25
C
100
A
200
A
300
A
400
A
500
A
600
A
700
A
800
A
900
A
I
B
=1mA
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( )
1
2
5
10
20
50 100 200
500 1000
5
10
20
50
100
200
500
1000
Ta
=
25
C
I
C
/I
B
=
50
20
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector current( )
1
10
20
50
100
200
500
1000
2
5
10
20
50 100 200
500 1000
V
CE
=
5V
-
55
C
25
C
Ta=100
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( )
1
2
5
10
20
50 100 200
500 1000
5
10
20
50
100
200
500
1000
l
C
/l
B
=
10
25
C
-
55
C
Ta
=
100
C
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.9 Gain bandwidth product vs. emitter current
-
1
200
500
20
50
100
10
-
2
-
5
-
10
-
20
-
50
-
100
-
200
-
500
Ta
=
25
C
V
CE
=
5V
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
COLLECTOR CURRENT : I
C
(mA)
Fig.8 Collector-emitter saturation voltage
vs. collector current ( )
(mV)
1
2
5
10
20
50 100 200
500 1000
10
20
50
100
200
500
1000
-
55
C
l
C
/l
B
=
50
25
C
Ta
=
100
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( )
1
2
5
10
20
50 100 200
500 1000
5
10
20
50
100
200
500
(mV)
1000
l
C
/l
B
=
20
25
C
-
55
C
Ta
=
100
C
2SD1757K
Transistors
Rev.A
3/3
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.10 Collector output capacitance
vs. collector-base voltage
0.1
100
200
20
50
10
2
5
0.2
0.5 1.0 2.0
5.0 10
20
50
Ta
=
25
C
f
=
1MHz
I
E
=
0A
EMITTER INPUT CAPACITANCE : Cib
(pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.11 Emitter input capacitance
vs. emitter-base voltage
200
0.1
10
100
20
50
10
5
2
0.2
0.5
1.0
2.0
5.0
Ta
=
25
C
f
=
1MHz
I
C
=
0A
ON RESISTANCE : Ron
(
)
BASE CURRENT : I
B
(
A)
Fig.12 "ON" resistance vs. base current characteristics
10
50 1000
5
1
0.5
100
500
Ta
=
25
C
Fig.13 "ON" resistance measurement circuit
v
0
v
i
f=1kHz
100mVrms
output
input
1k
V
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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