109
Silicon NPN Triple Diffused Planar Transistor
Application : Audio Temperature Compensation and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4495
80
50
6
3
1
25(Tc=25C)
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Absolute maximum ratings
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC4495
10
max
10
max
50
min
500
min
0.5
max
40
typ
30
typ
Unit
A
A
V
V
MHz
pF
Conditions
V
CB
=80V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=0.5A
I
C
=1A, I
B
=20mA
V
CE
=12V, I
E
=0.1A
V
CB
=10V,f=1MHz
2SC4495
(Ta=25C)
(Ta=25C)
I
C
V
C E
Characteristics (Typical)
h
F E
I
C
Characteristics (Typical)
h
F E
I
C
Temperature
Characteristics (Typical)
j - a
t
Characteristics
I
C
V
B E
Temperature
Characteristics (Typical)
V
C E
( s a t ) I
B
Characteristics (Typical)
P c T a Derating
0
0
1
2
3
2
1
3
4
5
6
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
30mA
I
B
= 0 . 5 m A
18mA
1 2 m
A
1 m A
2 m A
3 m A
8 m A
5 m A
Safe Operating Area (Single Pulse)
f
T
I
E
Characteristics (Typical)
0
1 . 5
0 . 5
1
100
1
10
1000
B a s e C u r r e n t I
B
( m A )
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
I
C
= 1 A
2 A
3 A
3
1
0 . 1
0 . 5
0 . 0 1
100
500
1000
3000
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= 4 V )
T y p
0.005 0.01
0 . 1
1
0
2 0
4 0
6 0
Cut-off Frequency f
T
(MH
Z
)
( V
C E
= 1 2 V )
E m i t t e r C u r r e n t I
E
( A )
T y p
1 0
5 0
3
5
1 0 0
0 . 0 5
0 . 1
1
0 . 5
1 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
3 0
2 0
1 0
2
0
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
A m b i e n t T e m p e r a t u r e T a ( C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
1 5 0 x 1 5 0 x 2
5 0 x 5 0 x 2
1 0 0 x1 00
x2
0
3
2 . 5
0 . 5
1 . 5
1
2
0
1 . 5
1
0 . 5
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= 4 V )
125C (Case Temp)
25C (Case Temp) 55C (Case Temp)
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
1
7
5
1
1 0
1 0 0
1 0 0 0
2 0 0 0
T i m e t ( m s )
Transient Thermal Resistance
j-a
(C/W)
3
1
0 . 1
0 . 5
0 . 0 1
20
100
50
500
1000
5000
( V
C E
= 4 V )
1 2 5 C
5 5 C
2 5 C
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
20
R
L
(
)
20
I
C
(A)
1
V
BB2
(V)
5
I
B2
(mA)
30
t
on
(
s)
0.45
typ
t
stg
(
s)
1.60
typ
t
f
(
s)
0.85
typ
I
B1
(mA)
15
V
BB1
(V)
10
External Dimensions FM20(TO220F)
3.3
0.2
10.1
0.2
4.0
0.2
16.9
0.3
13.0min
8.4
0.2
0.8
0.2
3.9
0.2
2.54
2.54
1.35
0.15
0.85
+0.2
-0.1
1.35
0.15
2.2
0.2
4.2
0.2
2.8
c0.5
2.4
0.2
0.45
+0.2
-0.1
B
E
C
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
High hFE
L
OW
V
CE
(sat)
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