98
SLA4313
NPN
PNP
Silicon Epitaxial Planar
Parameter
Symbol
NPN
PNP
Unit
V
CBO
35
-35
V
V
CEO
35
-35
V
V
EBO
6
-6
V
I
C
5
-5
A
I
CP
8 Pw1ms, Du50%
-8 Pw1ms, Du50%
A
I
B
1
-1
A
5 T
a
25
25 T
c
25
V
ISO
1000 Between fin and lead pin, AC
V
rms
T
stg
-40 to 150
Absolute maximum ratings
Weight: Approx. 6g
10
11
12
7
9
8
3
2
1
6
4
5
R
R
Electrical characteristics
Parameter
Symbol
NPN
PNP
10
A max
-10
A max
V
CB
35V
V
CB
-35V
20mA max
-20mA max
V
EB
6V
V
EB
-6V
35V min
-35V min
I
C
25mA
I
C
-25mA
50min
50min
V
CE
4V, I
C
3A
V
CE
-4V, I
C
-3A
0.5V max
-0.5V max
I
C
3A, I
B
100mA
I
C
-3A, I
B
-100mA
1.3V max
-1.3V max
I
C
3A, I
B
100mA
I
C
-3A, I
B
-100mA
1.8V max
1.8V max
I
F
2A
I
F
2A
I
EBO
h
FE
V
BE
(sat)
Equivalent circuit diagram
I
CBO
V
CEO
V
CE
(sat)
V
F
P
T
W
External dimensions
Unit: mm
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Diode Forward Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current
Base Current
Isolation Voltage
Storage Temperature
Total Power Dissipation
1
11P2.54
0.7
27.94
1.0
1.2
0.15
24.4
0.2
9.5 min
16.0
0.2
2.7
1.7
0.1
4.8
0.2
0.85
0.2
-0.1
1.45
0.15
0.55
0.2
-0.1
2.2
0.7
31.5 max
2 3 4 5 6 7 8 9 10 1112
31.0
0.2
3.2
0.15
Ellipse
3.2
0.15
3.8
13.0
0.2
Pin number
T
a
25
T
a
25
R: 600
99
Characteristic Curves
Base-Emitter Saturation Voltage
V
BE
(sat) (V)
V
BE
(sat)-I
C
Temperature Characteristics
(Typical PNP) (I
C
/I
B
10)
-1.5
Collector Current I
C
(A)
-
0.2
-
0.5
-
5
-1.0
-0.5
0
-
1
3
2
1
0
V
CE
(sat)-I
B
Characteristics
(Typical NPN)
V
CE
(sat)-I
C
Temperature Characteristics
(Typical PNP) (I
C
/I
B
10)
-10
Collector Current I
C
(A)
-0.2
-0.5
-1
-5
-0.5
0
Base-Emitter Voltage V
BE
(V)
0
0.5
1.0
1.5
Collector Current I
C
(A)
1
4
3
2
0
I
C
-V
BE
Temperature Characteristics
(Typical NPN) (V
CE
4V)
V
CE
(sat)-I
C
Temperature Characteristics
(Typical NPN) (I
C
/I
B
10)
1000
DC Current Gain h
FE
500
100
50
20
Collector Current I
C
(A)
-0.02 -0.05-0.1
-0.5 -1
-5 -10
1000
h
FE
-I
C
Temperature Characteristics
(Typical NPN) (V
CE
4V)
500
100
50
20
Collector Current I
C
(A)
0.02
0.05
0.1
0.5
1
5
10
h
FE
-I
C
Temperature Characteristics
(Typical PNP) (V
CE
-4V)
Base-Emitter Voltage V
BE
(V)
0
-
0.5
-
1.0
-
1.5
Collector Current I
C
(A)
-
1
-
4
-
3
-
2
0
I
C
-V
BE
Temperature Characteristics
(Typical PNP) (V
CE
-4V)
Base Current I
B
(mA)
3
500
50
5
10
100
V
BE
(sat)-I
C
Temperature Characteristics
(Typical NPN) (I
C
/I
B
10)
1.5
Collector Current I
C
(A)
0.2
0.5
5
10
1.0
0.5
0
1
Ta125
C
75
C
25
C
10
Collector Current I
C
(A)
0.2
0.5
1
5
10
0.5
0
I
C
4A
I
C
2A
-1.5
-
1.0
-0.5
0
V
CE
(sat)-I
B
Characteristics
(Typical PNP)
Base Current I
B
(mA)
-2
-
500
-
50
-5 -
10
-
100
Collector-Emitter Saturation Voltage
V
CE
(sat) (V)
Ta125
C
25
C
Ta125
C
25
C
75C
Ta125
C
25
C
75C
Ta125
C
25
C
Ta25C
125C
75C
Ta25C
125C
75C
75C
Ta125
C
25
C
75C
75C
I
C
-1A
I
C
-2A
Collector-Emitter Saturation Voltage
V
CE
(sat) (V)
Collector-Emitter
Saturation Voltage
V
CE
(sat) (V)
Collector-Emitter
Saturation Voltage
V
CE
(sat) (V)
DC Current Gain h
FE
Base-Emitter Saturation Voltage
V
BE
(sat) (V)
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