60
Characteristic curves (N-channel)
R
1
R
2
2
4
3
OUT
1
8
6
7
OUT
2
9
11
10
OUT
3
5
12
V
M
1
(T
a
=25
C)
Symbol
Ratings
Unit
V
M
60
V
I
O
6 (PW
100ms)
A
I
OP
10 (PW
1ms)
A
V
GSS
10
V
I
B
0.5
A
5 (T
a
=25
C)
35 (T
c
=25
C)
j-a
25
C/W
j-c
3.57
C/W
V
ISO
1000 (Between fin and lead pin, AC)
V
rms
T
j
150
C
T
stg
40 to +150
C
P
T
W
SLA5022
(T
a
=25
C)
Symbol
Unit
Conditions
V
(BR)DSS
60
V
I
D
=250
A, V
GS
=0V
I
GSS
500
nA
V
GS
=
10V
I
DSS
250
A
V
DS
=60V, V
GS
=0V
V
TH
1.0
2.0
V
V
DS
=10V, I
D
=250
A
Re(yfs)
3.1
4.6
S
V
DS
=10V, I
D
=4A
0.17
0.22
V
GS
=10V, I
D
=4A
0.25
0.30
V
GS
=4V, I
D
=4A
C
iss
400
pF
V
DS
=25V, f=1.0MHz,
C
oss
160
pF
V
GS
=0V
t
on
80
ns
I
D
=4A, V
DD
=30V,
t
off
50
ns
V
GS
=5V
V
SD
1.1
1.5
V
I
SD
=4A, V
GS
=0V
t
rr
150
ns
I
F
=
100mA
Specification
min
typ
max
R
DS(ON)
R
1
: 3k
typ R
2
: 80
typ
0
2
10
10
8
4
0
V
GS
=3V
4V
3.5V
4
6
8
10V
6
2
V
DS
(V)
I
D
(A)
6
0
8
10
(V
DS
=10V)
25
C
125
C
0
1
2
3
4
I
D
(A)
V
GS
(V)
T
C
=40
C
5
4
2
V
GS
=10V
0
0
1
7
10
0.1
0.2
0.3
I
D
(A)
R
DS (ON)
(
)
2
3
4
5
6
8
9
4V
0.3
0.05
0.5
1
1
5
10
V
DS
=10V
25
C
125
C
I
D
(A)
Re (yfs) (S)
5
10
0.5
T
C
=40
C
0.1
40
0
0
50
100
150
0.1
0.2
0.3
0.4
R
DS (ON)
(
)
T
C
(
C)
V
GS
=10V
4V
(I
D
=2.5A)
0
10
20
30
40
50
10
100
1000
Ciss
Coss
Crss
V
DS
(V)
Capacitance (pF)
500
50
V
GS
=0V
f=1MHz
0
0
1.0
1.5
6
8
10
VGS=0V
4V
I
DR
(A)
V
SD
(V)
0.5
10V
4
2
0.5
0.1
1
5
10
50
100
1
5
10
20
(T
C
=25
C)
I
D
(pulse) max
1ms
100
s
10
ms
(1shot)
R
DS (ON)
LIMITED
I
D
(A)
V
DS
(V)
0.5
PNP Darlington + N-channel MOSFET
3-phase motor drive
Absolute maximum ratings
Electrical characteristics (Sink : N channel MOSFET)
W
s
Equivalent circuit diagram
External dimensions
A
SLA
V
DS
-I
D
Characteristics (Typical)
V
GS
-I
D
Temperature Characteristics (Typical)
I
DS
-R
DS(ON)
Characteristics (Typical)
I
D
-Re
(yfs)
Temperature Characteristics (Typical)
T
C
-R
DS(ON)
Characteristics (Typical)
V
DS
-Cpacitance Characteristics (Typical)
V
SD
-I
DR
Characteristics (Typical)
Safe Operating Area (SOA)
61
Characteristic curves (PNP)
SLA5022
(T
a
=25
C)
Symbol
Unit
Conditions
I
CBO
10
A
V
CB
=60V
I
EBO
1
5
mA
V
EB
=6V
V
CEO
60
V
I
C
=25mA
h
FE
2000
5000
12000
V
CE
=4V, I
C
=4A
V
CE
(sat)
1.5
V
V
BE
(sat)
2.0
V
V
FEC
2.0
V
I
FEC
=4A
t
rr
1.0
s
I
F
=
0.5A
t
on
1.0
s
V
CC
25V,
t
stg
1.4
s
I
C
=4A,
t
f
0.6
s
I
B1
=I
B2
=10mA
f
T
120
MHz
V
CE
=12V, I
E
=1A
C
ob
150
pF
V
CB
=10V, f=1MHz
Specification
min
typ
max
Electrical characteristics (Source: PNP transistor)
I
C
=4A, I
B
=10mA
12
10
8
6
4
2
0
0
2
4
6
I
B
=10mA
1mA
0.5mA
2mA
3mA
5mA
I
C
(A)
V
CE
(V)
20000
10000
5000
1000
500
200
0.1
0.5
1
5
10
typ
(V
CE
=4V)
h
FE
I
C
(A)
20000
10000
5000
1000
500
200
0.1
0.5
1
5
T
a
=125
C
75
C
25
C
30
C
10
(V
CE
=4V)
h
FE
I
C
(A)
3
0.1
0.5
2
1
0
1
5
10
125
C
75
C
25
C
20
(I
C
/ I
B
=1000)
V
CE
(sat) (V)
I
C
(A)
T
a
=30
C
3
0.3 0.5
2
1
0
1
5
10
50
100 200
I
C
=2A
I
C
=4A
I
C
=8A
V
CE
(sat) (V)
I
B
(mA)
0
1
2
3
75
C
25
C
30
C
T
a
=125
C
12
10
8
6
4
2
0
(V
CE
=4V)
I
C
(A)
V
BE
(V)
20
10
5
1
0.5
1
5
10
50 100
500 1000
PW (mS)
ch-c
(
C / W)
5
V
CE
(V)
100
50
10
3
20
I
C
(A)
5
1
0.5
0.1
Single Pulse
Without Heatsink
T
a
=25
C
10ms
1ms
100
s
10
25
30
35
40
20
15
10
5
0
0
50
100
150
T
a
(
C)
P
T
(W)
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
Without Heatsink
I
C
-V
CE
Characteristics (Typical)
h
FE
-I
C
Characteristics (Typical)
h
FE
-I
C
Temperature Characteristics (Typical)
V
CE
(sat)-I
C
Temperature Characteristics (Typical)
V
CE
(sat)-I
B
Characteristics (Typical)
I
C
-V
BE
Temperature Characteristics (Typical)
j-a
-PW Characteristics
Safe Operating Area (SOA)
P
T
-T
a
Characteristics
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