B1
B2
E2
E2
C2E1
B2X
B1X
E1
C1
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA200BA60
TRANSISTOR MODULE
Hi-
UL;E76102
M
Thermal Impedance
(junction to case)
Maximum Ratings
Tj25 unless otherwise specified
Electrical Characteristics
Symbol
Item
Conditions
Ratings
QCA200BA60
Unit
V
CBO
Collector-Base Voltage
600
V
V
CEX
Collector-Emitter Voltage
V
BE
-2V
600
V
Emitter-Base Voltage
V
V
EBO
10
I
C
Collector Current
pw1ms
200
400
A
-I
C
Reverse Collector Current
200
A
I
B
Base Current
12
A
P
T
Total power dissipation
T
C
25
1250
W
T
j
Junction Temperature
-40 to 150
Tstg
Storage Temperature
-40 to 125
V
ISO
Isolation Voltage
A.C.1minute
2500
Mounting
Torque
Mounting
M6
Terminal
M6
Recommended Value 2.5-3.9
25-40
4.7
48
Recommended Value 2.5-3.9
25-40
4.7
48
N
m
(
fB)
Mass
Typical Value
470
g
15
15
33.0max
37.0max
30.0max
14.0
24.0max
25.0
3-M6
L=10max
AMP110
t=0.5
25.0
108max
4-6.5
63.0max
930.5
48
0.5
6.0
7.5
7.5
6.0
B
2
X
C
2
E
1
E
2
C
1
B
2
E
2
E
1
B
1
B
1
X
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max.
2.0
800
750
2.5
3.0
2.0
8.0
2.0
1.8
0.1
0.3
Unit
I
CBO
Collector Cut-off Current
V
CB
V
CBO
mA
I
EBO
Emitter Cut-off Current
V
EB
V
EBO
mA
450
V
CEO
SUS
V
CEX
SUS
Collector Emitter Sustaning
Voltage
Ic
1A
600
Ic
40AI
B2
-8A
V
h
FE
D.C. Current Gain
Ic
200AV
CE
2.5V
V
CE
sat
Collector-Emitter Saturation Voltage
Ic
200AI
B
0.26A
V
V
BE
sat
Base-Emitter Saturation Voltage
Ic
200AI
B
0.26A
V
s
V
/W
ton
On Time
Storage Time
Fall Time
Transistor part
Diode part
ts
tf
Vcc
300VIc200A
I
B1
0.4AI
B2
-4A
Ic
-200A
V
ECO
Rth
j-c
Switching
Time
Collector-Emitter Reverse Voltage
Typ.
200
ns
Vcc
300V, Ic-200A, -di/dt200A/s, V
BE
-5V
trr
Reverse Recovery time
QCA200BA60 is a dual Darlington power transistor module which has series-connected
ULTRA HIGH h
FE
, high speed, high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode (trr
200ns). The mounting base of the module is
electrically isolated from Semiconductor elements for simple heatsink construction,
I
C
200A, V
CEX
600V
Low saturation voltage for higher efficiency.
ULTRA HIGH DC current gain h
FE
. h
FE
750
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control
VVVF, AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
SanRex
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA200BA60
Tj
125
V
CE
5V
V
CE
2.5V
Typical
Tj
25
D.C. Current Gain
Collector Current IcA
DC Current Gain h
FE
-
Typical
Tj25
I
B1
0.4A
I
B2
-4.0A
V
CC
300V
ts
tf
ton
Collector Current Vs Switching Time
Collector Current IcA
Switching Time
t
on ts
t
f
s
100
s
50
s
1m
s
Puls
e W
ide
Tc
25
Non-Repetitive
500
s
Forward Bias Safe Operating Area
Collector-Emitter Voltage V
CE
V
Collector Current Ic
A
I
B2
-3.5A
Tj125
Reverse Bias Safe Operating Area
Collector-Emitter Voltage V
CE
V
Collector Current Ic
A
Collector Current Derating Factor
Case Temperature
Derating Factor
%
IS/B Limited
P
T
Limited
Typical
Tj25
Emitter-Collector Voltage V
ECO
V
Forward Voltage of Free Wheeling Diode
Collector Reverse Current -Ic
A
trr
Qrr
di/dt-200A/s
Typical
V
BE
-5V
Tj25
Reverse Recovery Characteristics
Reverse Collector Current -IcA
10
-
Reverse Recovery Charge Qrr
C
Reverse Recovery Current Irr
A
Reverse Recovery Time
t
rr
C
-
-
-
-
-
max
50msec50sec
200sec50msec
Maximum Transient Thermal Impedance
Characteristics
Time
t
sec
Transient Thermal Impedance
j-c
/
W
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