47
SQD300AA100
TRANSISTOR MODULE
UL;E76102 M
Thermal Impedance
(junction to case)
Maximum Ratings
Tj
25
Electrical Characteristics
Tj
25
Symbol
Item
Conditions
Ratings
SQD300AA100
Unit
V
CBO
Collector-Base Voltage
1000
V
V
CEX
Collector-Emitter Voltage
V
BE
2V
1000
V
Emitter-Base Voltage
V
V
EBO
7
I
C
Collector Current
300
A
I
C
Reverse Collector Current
300
A
I
B
Base Current
16
A
P
T
Total power dissipation
T
C
25
2000
W
T
j
Junction Temperature
40
150
Tstg
Storage Temperature
40
125
V
ISO
Isolation Voltage
A.C.1minute
2500
V
Mounting
Torque
Mounting M6
Terminal M6
Recommended Value 2.5
3.9
25
40
4.7
48
Recommended Value 2.5
3.9
25
40
4.7
48
Terminal M4
Recommended Value 1.0
1.4
10
14
1.5
15
N m
(
f B)
Mass
Typical Value
520
g
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max.
2.0
800
1000
75
100
2.5
3.5
3.0
15.0
3.0
1.8
0.063
0.3
Unit
I
CBO
Collector Cut-off Current
V
CB
1000V
mA
I
EBO
Emitter Cut-off Current
V
EB
7V
mA
V
CEX SUS
h
FE
Collector Emitter Sustaning Voltage
Ic
60A
I
B2
12A
Ic
300A
V
CE
2.8V
V
DC Current Gain
Ic
300A
V
CE
5V
V
CE sat
Collector-Emitter Saturation Voltage
Ic
300A
I
B
6A
V
V
BE sat
Base-Emitter Saturation Voltage
Ic
300A
I
B
6A
V
s
V
/W
ton
On Time
Storage Time
Fall Time
ts
tf
Vcc
600V
Ic
300A
I
B1
6A
I
B2
6A
Ic
300A
Transistor part
Diode part
V
ECO
Rth j-c
Switching
Time
Collector-Emitter Reverse Voltage
SQD300AA100 is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
I
C
300A, V
CEX
1000V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
Applications
Moter Control
VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
49
SQD300AA120
TRANSISTOR MODULE
UL;E76102 M
Thermal Impedance
(junction to case)
Maximum Ratings
Tj
25
Electrical Characteristics
Tj
25
Symbol
Item
Conditions
Ratings
SQD300AA120
Unit
V
CBO
Collector-Base Voltage
1200
V
V
CEX
Collector-Emitter Voltage
V
BE
2V
1200
V
Emitter-Base Voltage
V
V
EBO
10
I
C
Collector Current
300
A
I
C
Reverse Collector Current
300
A
I
B
Base Current
16
A
P
T
Total power dissipation
T
C
25
2000
W
T
j
Junction Temperature
40
150
Tstg
Storage Temperature
40
125
V
ISO
Isolation Voltage
A.C.1minute
2500
V
Mounting
Torque
M6
Terminal M6
Recommended Value 2.5
3.9
25
40
4.7
48
Recommended Value 2.5
3.9
25
40
4.7
48
Terminal M4
Recommended Value 1.0
1.4
10
14
1.5
15
N m
(
f B)
Mass
Typical Value
470
g
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max.
4.0
1200
1200
75
3.0
3.5
3.0
15.0
3.0
1.8
0.063
0.3
Unit
I
CBO
Collector Cut-off Current
V
CB
1200V
mA
I
EBO
Emitter Cut-off Current
V
EB
10V
mA
V
CEX SUS
h
FE
Collector Emitter Sustaning Voltage
Ic
60A
I
B2
12A
Ic
300A
V
CE
5V
V
DC Current Gain
V
CE sat
Collector-Emitter Saturation Voltage
Ic
300A
I
B
6A
V
V
BE sat
Base-Emitter Saturation Voltage
Ic
300A
I
B
6A
V
s
V
/W
ton
On Time
Storage Time
Fall Time
Transistor part
Dioe part
ts
tf
Vcc
600V
Ic
300A
I
B1
6A
I
B2
6A
Ic
300A
V
ECO
Rth j-c
Switching
Time
Collector-Emitter Reverse Voltage
SQD300AA120 is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
I
C
300A, V
CEX
1200V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
Applications
Moter Control
VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
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