980922TM2fXHD
Features and applications
Low noise : NF=1.2dB typ (f=2GHz)
High gain : | S21e |
2
=10dB typ (f=2GHz)
High cutoff frequency : fT=13GHz typ
Absolute Maximum Ratings / Ta=25
C
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics / Ta=25
C
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
2SC5373
NPN Epitaxial Planar Silicon Transistor
For UHF to S Band Low-noise Amp / Osillator
TENTATIVE
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
Case Outline
Specifications and information herein aer subject to change without notice.
min typ max unit
A
A
GHz
pF
dB
dB
dB
1.0
10
200
0.6
2.0
90
10
8
unit
VCBO
VCEO
VEBO
I C
PC
Tj
Tstg
9
5
1.5
30
150
150
--55 to +150
V
V
V
mA
mW
C
C
ICBO
IEBO
hFE
fT
Cre
NF
13
0.3
10
8
1.2
VCB=5V , IE=0
VEB=1V , IC=0
VCE=5V , IC=10mA
VCE=5V , IC=10mA
VCB=5V , f =1MHz
VCE=5V , IC=10mA , f=2GHz
VCE=1V , IC=3mA , f=2GHz
VCE=5V , IC=5mA , f=2GHz
| S21e |
2
(1)
| S21e |
2
(2)
MCP(unit:mm)
Marking : RY
0.3
0.65 0.65
2.0
0.425
1.250
2.1
0.425
0.15
0 to 0.1
0.2
0.3
0.6
0.9
1
2
3
1: Base
2: Emitter
3: Collector
PDF 
ZIP