SVD101
Ordering number : EN5766
X Band VCO, PLO
Hyperabrupt Junction Type GaAs Varactor Diode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
Specifications
Absolute Maximum Ratings
at Ta=25C
Parameter
Symbol
Conditions
Ratings
Unit
Peak Reverse Voltage
V
rm
30
V
Average Rectified Current
I
fm
30
mA
Allowable Power Dissipation
P
D
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
Mounting Temperature
Tm
230/10s
C
Electrical Characteristics
at Ta=25C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Forward Voltage
V
F
I
F
=10mA
1.4
V
Reverse Voltage
V
R
I
R
=10A
27
V
Reverse Current
I
R
V
R
=25V
100
nA
Interterminal Capacitance
C
t0V
V
R
=0V, f=1MHz
1.0
1.3
pF
Capacitance Ratio
C
j0V
/ C
j25V
V
R
=0V, 25V, f=1MHz
5
8
90597GI (KOTO) No.5766-1/2
Package Dimensions
unit: mm
1274
[SVD101]
1 : Cathode
2 : Anode
Features
High Q.
High capacitance ratio.
SVD101
No.5766-2/2
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property lose.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of September, 1997. Specifications and information herein are
subject to change without notice.
1
10
0.1
1.0
10.0
Vbi=1.0V
Cj -- Vr + Vbi
50
25
0
25
50
75
100
6
4
2
0
2
4
6
Cj -- Ta
Vr=1V
10V
10V
5V
3V
3V
5V
10V
1V
f=1MHz
Junction Capacitance, Cj pF
Capacitance Ratio,
Cj %
Reverse Voltage, Vr + Diffusion potential, Vbi V
Ambient Temperature, Ta C
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