Prelim.6/99
2N3019
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
NPN SILICON TRANSISTOR
FEATURES
NPN High Voltage Planar Transistor
Hermetic TO39 Package
Full Screening Options Available
V
CBO
Collector
Base Voltage
V
CEO
Collector
Emitter Voltage
V
EBO
Emitter
Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation @ T
A
= 25C
P
D
Derate above 25C
P
D
Total Device Dissipation @ T
C
= 25C
P
D
Derate above 25C
T
j
Max Junction Temperature
T
stg
Storage Temperature
R
jc
Thermal Resistance Junction to Case
R
ja
Thermal Resistance Junction to Ambient
140V
80V
7V
1A
0.8W
4.6mW / C
5W
28.6mW / C
200C
55 to 200C
16.5C / W
89.5C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO39 PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
Pin 1 = Emitter
Underside View
Pin 2 = Base
Pin 3 = Collector
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
Prelim.6/99
2N3019
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
I
C
= 30mA
I
B
= 0
I
C
= 100
m
A
I
E
= 0
I
E
= 100
m
A
I
C
= 0
V
CB
= 90V
I
E
= 0
V
CB
= 90V
I
E
= 0
T
amb
= 150C
V
BE
= 5V
I
C
= 0
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 150mA
I
B
= 15mA
I
C
= 0.1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
I
C
= 150mA
V
CE
= 10V
I
C
= 500mA
V
CE
= 10V
I
C
= 1A
V
CE
= 10V
I
C
= 150mA
V
CE
= 0.5V
V
(BR)CEO
Collector Emitter Breakdown Voltage
V
(BR)CBO*
Collector Base Breakdown Voltage
V
(BR)EBO*
Emitter Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)
Collector Emitter Saturation Voltage
V
BE(sat)
Base Emitter Saturation Voltage
h
FE*
DC Current Gain
T
C
= 55C
80
140
7
0.01
10
0.010
0.20
0.50
1.1
50
90
100
300
50
15
40
V
V
V
m
A
m
A
V
V
--
f
T
Transition Frequency
C
obo
Output Capacitance
C
ibo
Input Capacitance
h
fe
Small Signal Current Gain
rb'C
c
Collector Base Time Constant
NF
Noise Figure
I
C
= 50mA
V
CE
= 10V
f = 20MHz
V
CB
= 10V
I
E
= 0
f = 1.0MHz
V
BE
= 0.5V
I
C
= 0
f = 1.0MHz
I
C
= 1mA
V
CE
= 5V
f = 1kHz
I
E
= 10mA
V
CB
= 10V
f = 79.8MHz
I
C
= 100
m
A
V
CE
= 10V
f = 1kHz
R
S
= 1K
W
100
400
12
60
80
400
15
400
4
MHz
pF
pF
--
ps
db
t* Pulse test tp = 300
m
s ,
d
1%
DYNAMIC CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
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