Prelim. 4/00
MCA104
Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
ABSOLUTE MAXIMUM RATINGS
V
CBO
Collector - Base Voltage
V
CEO
Collector - Emitter Voltage
V
EBO
Emitter - Base Voltage
I
C
Collector Current (per device)
P
D
Power Dissipation (per device)
s
j-a
Thermal Resistance (junction to ambient)
T
j
,T
stg
Storage, Junction Temperature
75V
40V
6
600mA
350mW
-60V
- 60V
-5
600mA
350mW
DESCRIPTION
The MCA104 is a ceramic surface mount transistor array
designed for high reliability applications.
It contains 2 NPN Bipolar Transistors and 2 PNP Bipolar
Transistors.
MECHANICAL DATA
Dimensions in mm (inches)
8 . 8 9 ( 0 . 3 5 0 )
1 . 2 7 ( 0 . 0 5 0 )
t y p .
7.
24
(
0.
285)
0.
65
(
0.
025)
ty
p
.
2 . 5 4
( 0 . 1 0 0 )
1 . 1 4 ( 0 . 0 4 5 )
t y p
0 . 2 3
( 0 . 0 0 9 )
R a d .
1 8 p l c s
0 . 3 0
( 0 . 0 1 2 )
R a d .
4 p l c s
1 . 1 4 0 . 1 5
( 0 . 0 4 5 0 . 0 0 6 )
1 . 4 0
( 0 . 0 5 5 )
N o m .
#
!
"
#
$
%
&
'
!
"
$
%
&
FEATURES
Ceramic Surface Mount Package.
Screening Options Available
NPN DEVICES
V
CBO
= 75V
V
CBO
= 400V
I
C
= 600mA
PNP DEVICES
V
CBO
= 60V
V
CEO
= 60V
I
C
=
600
mA
NPN
2 = E1
3 = B1
4 = C1
PNP
6 = C2
7 = B2
8 = E2
PNP
11 = E3
12 = B3
13 = C3
NPN
15 = C4
16 = B4
17 = E4
NPN Channel PNP Channel
350C
-55 to +200C
MULTI-CHIP ARRAY
TWO NPN AND TWO PNP
HIGH SPEED, MEDIUM POWER
SWITCHING TRANSISTORS IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
1,5,9,10,14,18 NO CONNECTION
Pinout:
I
C
= 20mA
V
CE
= 20V
f =100MHz
V
CB
= 10V
I
E
= 0
f = 1.0MHz
V
BE
= 0.5V
I
C
= 0
f = 1.0MHz
I
C
= 1mA
V
CE
= 10V
f = 1kHz
I
C
= 10mA
V
CE
= 10V
f = 1kHz
Prelim. 4/00
MCA104
Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
I
C
= 0
I
B
= 0
V
CE
= 60V
I
E
= 0
V
CB
= 60V
T
C
= 125C
I
C
= 0
V
EB
= 3V (off)
V
CE
= 60V
V
EB
= 3V (off)
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
C
= 50mA
I
C
= 0.1mA
V
CE
= 10V
I
C
= 1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
I
C
= 150mA
V
CE
= 10V
I
C
= 150mA
V
CE
= 1V
I
C
= 500mA
V
CE
= 10V
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
NPN DEVICES
V
CEO(sus)*
Collector Emitter Sustaining Voltage
V
(BR)CBO*
Collector Base Breakdown Voltage
V
(BR)EBO*
Emitter Base Breakdown Voltage
I
CEX*
Collector Cut-off Current (I
C
= 0)
I
CBO*
Collector Base Cut-off Current
I
EBO*
Emitter Cut-off Current (I
C
= 0)
I
BL*
Base Current
V
CE(sat)*
Collector Emitter Saturation Voltage
V
BE(sat)*
Base Emitter Saturation Voltage
h
FE*
DC Current Gain
T
A
= 55C
40
75
6
10
10
10
10
20
0.3
1
0.6
1.2
2
35
50
75
35
100
300
50
40
V
V
V
nA
nA
m
A
nA
nA
V
V
--
f
T
Transition Frequency
C
ob
Output Capacitance
C
ib
Input Capacitance
hfe
Small Signal Current Gain
300
8
30
50
300
75
375
MHz
pF
pF
10
25
225
60
ns
ns
ns
ns
V
CC
= 30V
V
BE
= 0.5V (off)
I
C1
= 150mA
I
B1
= 15mA
V
CC
= 30V
I
C
= 150mA
I
B1
= I
B2
= 15mA
fT is defined as the frequency at which hFE extrapolates to unity.
* Pulse test t
p
= 300
m
s ,
d
2%
DYNAMIC CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
NPN DEVICES
SWITCHING CHARACTERISTICS (RESISTIVE LOAD)
(Tcase = 25C unless otherwise stated)
Prelim. 4/00
MCA104
Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
CC
= 30V
I
C
= 150mA
I
B1
= 15mA
V
CC
= 6V
I
C
= 150mA
I
B1
= I
B2
= 15mA
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
PNP DEVICES
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
I
C
= 0
V
CE
= 30V
V
BE
= 0.5V
I
E
= 0
V
CB
= 50V
T
C
= 125C
V
CE
= 30V
V
BE
= 0.5V
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 0.1mA
V
CE
= 10V
I
C
= 1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
I
C
= 150mA
V
CE
= 10V
I
C
= 500mA
V
CE
= 10V
V
CEO(sus)*
Collector Emitter Sustaining Voltage
V
(BR)CBO*
Collector Base Breakdown Voltage
V
(BR)EBO*
Emitter Base Breakdown Voltage
I
CEX*
Collector Cut-off Current
I
CBO*
Collector Base Cut-off Current
I
BEO
Base Cut-off Current
V
CE(sat)*
Collector Emitter Saturation Voltage
V
BE(sat)*
Base Emitter Saturation Voltage
h
FE*
DC Current Gain
60
60
5
50
0.01
10
50
0.4
1.6
1.3
2.6
75
100
100
100
300
50
V
V
V
nA
m
A
nA
V
V
--
f
T
Transition Frequency
C
ob
Output Capacitance
C
ib
Input Capacitance
I
C
= 50mA
V
CE
= 20V
f = 100MHz
V
CB
= 10V
I
E
= 0
f = 1.0MHz
V
BE
= 2V
I
C
= 0
f = 1.0MHz
200
8
30
MHz
pF
pF
t
on
Turn-on Time
t
d
Delay Time
t
r
Rise Time
t
off
Turn-off Time
t
s
Storage Time
t
f
Fall Time
26
45
6.0
10
20
40
70
100
50
80
20
30
ns
ns
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
* Pulse test t
p
= 300
m
s ,
d
2%
DYNAMIC CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
PNP DEVICES
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