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Электронный компонент: GP1S29

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GP1S29
*1 For 5 seconds
s
Absolute Maximum Ratings
(Ta = 25C )
s
Features
s
Outline Dimensions
( Unit : mm)
1. Ultra-compact type
Internal connection diagram
3.0
4.0
2.54
g
(C0.3)
0.9
3.2
(1.15)
2.5
( 1.0
)
3.6
(0.8)
4.0
Slit width
(C0.8)
5.1
2.54
g
Rest of gate
(2)
Center of
light path
4
-
0.15
4
-
0.4
3
4
2
1
1 Anode
2 Cathode
3 Emitter
4 Collector
1
2
3
4
1mm or more
s
Applications
1. Cameras
2. Floppy disk drives
receive external disturbing
light because the back face of
GP1S29
detector element is not covered
2. Thin detection portion
Parameter
Symbol
Rating
Unit
Input
Forward current
50
mA
Reverse voltage
6
V
75
mW
Output
Collector-emitter voltage
35
V
Emitter-collector voltage
6
V
Collector current
20
mA
75
mW
100
mW
Operating temperature
- 25 to + 85
C
- 40 to + 100
C
260
C
*1
Soldering temperature
I
F
V
R
P
V
CEO
V
ECO
I
C
P
C
P
tot
T
opr
T
stg
T
sol
( Thickness of detection portion: 3.2mm )
Note ) Please use carefully not to
with case.
Subminiature Photointerrupter
Collector power dissipation
Storage temperature
Total power dissipation
Soldering area
*
Tolerance
:
0.2mm
*
Burr's dimensions
:
0.15MAX.
*
Rest of gate
:
0.3MAX.
*
( )
:
Reference dimensions
*
The dimensions indicated by
g
refer
to those measured from the lead base.
Power dissipation
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
4.0
MIN.
s
Electro-optical Characteristics
( Ta = 25C)
GP1S29
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input
Forward voltage
V
F
I
F
= 20mA
-
1.2
1.4
V
Reverse current
I
R
V
R
= 3V
-
-
10
A
Output
Collector dark current
I
CEO
V
CE
= 20V
-
-
A
Transfer-
charac-
teristics
I
F
-
A
Collector-emitter saturation voltage
I
F
C
-
-
0.4
V
Response time
Rise time
V
CE
L
= 1k
I
C
= 100
A
-
50
150
s
Fall time
-
50
150
s
- 7
- 25
0
25
50
75
100
0
10
20
30
40
50
60
- 25
0
25
50
75
100
0
20
40
60
Power dissipation P
(
mW
)
80
85
100
120
0
2
0
0.2
1.0
0.4
10
4
6
8
85
0.6
0.8
1.2
1.8
0
0.5
1
1.5
2
1
2
10
20
100
200
2.5
3
5
50
500
25C
0C
- 25C
50C
3.5
P
tot
P, P
c
Ambient temperature T
a
(C)
Fig. 1 Forward Current vs. Ambient
Temperature
Forward current I
F
(
mA
)
Ambient temperature T
a
(C)
Fig. 4 Collector Current vs. Forward Current
Collector current I
C
(
mA
)
Forward current I
F
( mA )
Fig. 3 Forward Current vs. Forward Voltage
T
a
= 75C
Forward current I
F
(
mA
)
Forward voltage V
F
(V)
Fig. 2 Power Dissipation vs.
Ambient Temperature
V
CE
= 5V
T
a
= 25C
1.4
1.6
V
CE
( sat )
t
r
t
f
= 5V, R
= 3mA, I = 30
A
40
240
1 x 10
= 1.5mA, V
CE
= 5V
Collector Current
Ic
10
9
8
7
6
5
4
3
2
1
0
0
100
75
50
25
0
0.30
0.25
0.20
0.15
0.10
0.05
0
100
75
50
25
0
0
Collector-emitter saturation voltage
5
2
5
2
5
2
5
2
100
75
50
25
0
500
200
100
50
20
10
5
2
1
5
100
50
10
5
20
1
0.5
2
0.2
0.1
Response time
(
s
)
0.3
0.05
1
2
3
4
5
6
7
8
9
10
1.5mA
10mA
20mA
30mA
40mA
0.02
0.04
0.06
0.08
0.10
0.12
10
%
Test Circuit for Response Time
Output
Input
90
%
Input
Output
Collector current I
C
(
mA
)
Ambient temperature T
a
(C)
Fig. 5 Collector Current vs. Collector-
emitter Voltage
T
a
= 75C
P
C(MAX.)
I
F
= 50mA
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
( V)
Fig. 8 Collector Dark Current vs. Ambient
Temperature
V
CE
= 20V
Collector dark current I
CEO
(
A
)
Ambient temperature T
a
(C)
10
- 6
10
- 7
10
- 8
10
- 9
10
- 10
Fig. 7 Collector-emitter Saturation Voltage
vs. Ambient Temperature
V
CE
( sat
)
(V
)
Ambient temperature T
a
(C)
L
( k
)
t
f
t
r
t
d
t
s
V
CC
R
D
t
d
t
r
t
s
t
f
Fig. 6 Collector Current vs.
Ambient Temperature
GP1S29
I
C
= 100
A
V
CE
= 5V
T
a
= 25C
I
F
= 10mA
I
C
= 50
A
I
F
= 1.5mA
V
CE
= 5V
R
L
- 25
- 25
Fig. 9 Response Time vs. Load Resistance
Load resistance R
0
1
0
Relative collector current
(
%
)
Shield distance L ( mm )
- 2
2
100
( Detector center )
Detector
Shield
L
0
+
-
-
+
0
L
Shield
Detector
(
Detector center
)
Shield distance L ( mm )
Relative collector current
(
%
)
- 1
50
3
50
- 1
100
- 2
0
0
3
2
1
Fig.11 Relative Collector Current vs.
Shield Distance ( 2 )
V
CE
= 5V
I
T
a
= 25C
Fig.10 Relative Collector Current vs.
Shield Distance ( 1 )
I
F
= 1.5mA
V
CE
= 5V
T
a
= 25C
GPIS29
F
= 1.5mA
q
Please refer to the chapter " Precautions for Use ".