GP1S30
s
Absolute Maximum Ratings
(Ta = 25C )
s Outline Dimensions
(Unit : mm )
s
Features
s
Applications
1. Compact package
2. PWB mouning type
4. Detecting pitch : 0.6mm
Internal connection diagram
4.0
2.54
g
(C0.3)
0.9
2.5
( 1.0
)
4.0
Rest of gate
(2)
Center of
light path
1 Anode
2 Cathode
1
2
3
PT1
PT2
1
2
3
5
4
3 Emitter2
4 Emitter1
5 Collector
5.0
(1.0)
2
-
(0.37)
BB'Section
5
-
0.4
g
1.27
g
1.27
(C0.6)
3.8
1.45
A'
B'
A
B
(0.8)
AA'Section
Slit width of
emitter side
4
5
1mm or more
*
Tolerance
:
0.2mm
*
Burr's dimensions
:
0.15MAX.
*
Rest of gate
:
0.3MAX.
*
( )
:
Reference dimensions
*
The dimensions indicated by
g
refer
to those measured from the lead base.
3. Double-phase phototransistor output type for
detecting of rotation direction and count
1. Mouses
2. Cameras
Prameter
Symbol
Rating
Unit
Input
I
F
50
mA
Reverse voltage
V
R
6
V
Power dissipation
P
75
mW
Output
Collector-emitter voltage
35
V
Emitter-collector Voltage
6
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
75
mW
Total power dissipation
P
tot
100
mW
Operating temperature
T
opr
- 25 to + 85
C
Storage temperature
T
stg
- 40 to + 100
C
*1
Soldering temperature
T
sol
260
C
V
CE1O
V
CE2O
V
E1CO
V
E2CO
GP1S30
Subminiature Photointerrupter
Forward current
Soldering area
5
-
0.15
+
0.2
-
0.1
*1 For MAX. 5 seconds
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
4.0
MIN.
GP1S30
(Ta = 25C )
Parameter
Symbol
Forward voltage
V
F
I
F
= 20mA
Reverse current
I
R
V
R
= 3V
I
CEO
V
CE
= 20V
Collector current
I
C
Collector-emitter saturation voltage
V
CE( sat )
Response time
Rise time
Fall time
Input
Output
Transfer
t
r
t
f
V
CE
= 5V, I
F
= 4mA
I
F
= 8mA, I
C
= 125
A
MIN.
TYP.
MAX.
Unit
-
1.2
1.4
V
-
-
10
A
-
-
100
250
-
A
-
-
0.4
V
-
50
150
-
50
150
charac-
teristics
s
Electro-optical Characteristics
V
CC
= 5V, I
C
= 100
A
s
s
- 25
0
25
50
75
100
0
10
20
30
40
50
60
- 25
0
25
50
75
100
0
20
40
60
Power dissipation P
(
mW
)
80
85
100
120
85
Ambient temperature T
a
(C)
Fig. 1 Forward Current vs. Ambient
Temperature
Forward current I
F
(
mA
)
Ambient temperature T
a
(C)
Fig. 2 Power Dissipation vs.
Ambient Temperature
Collector dark current
0
0.5
1
1.5
2
2.5
3
25C
0C
- 25C
50C
Fig. 3 Forward Current vs. Forward Voltage
Forward current I
F
(
mA
)
Forward voltage V
F
(V)
0
2.0
4.0
6.0
8.0
10.0
F
( mA )
0
10
20
30
40
50
C
(
mA
)
5
2
1
10
20
50
100
200
500
Fig. 4 Collector Current vs. Forward Current
Collector current I
Forward current I
Conditions
1 000
nA
P
tot
T
a
= 75C
V
CE
= 5V
T
a
= 25C
P, P
c
R
L
= 1 000
GP1S30
0
2
4
6
8
10
C
(
mA
)
CE
(V)
0
2
4
6
10
8
a
(C)
C
(
A
)
0
25
50
75 85
Ambient Temperature
- 25
0.15
0.10
a
(C)
0
25
50
75 85
- 25
CE
( sat
)
(
V
)
vs. Ambient Temperature
2
5
2
5
2
5
2
5
25
50
75
100
0
Fig. 8 Collector Dark Current vs.
Ambient Temperature
Collector dark current I
CEO
1
10
100
500
(
s
)
0.5
1
10
50
Fig. 9 Response Time vs.
10
%
Test Circuit for Response Time
Output
Input
90
%
Input
Output
R
D
V
CC
R
L
t
d
t
r
t
s
t
f
Collector current I
Collector current I
Ambient temperature T
Fig. 6 Collector Current vs.
Ambient temperature T
a
( C )
Ambient temperature T
Collector-emitter saturation voltage V
Fig. 7 Collector-emitter Saturation Voltage
Response time
0.11
0.12
0.13
0.14
0.16
0.17
Fig. 5 Collector Current vs.
(
A
)
40mA
30mA
20mA
10mA
4mA
t
r
t
f
t
d
t
s
T
a
= 25C
I
F
= 50mA
600
500
400
300
200
100
I
F
= 8mA
I
C
= 125
A
10
- 10
10
- 9
10
- 8
10
- 7
10
- 6
V
CE
= 20V
V
CE
= 5V
I
C
= 100
A
T
a
= 25C
Collector-emitter Voltage
Collector-emitter voltage V
Load Resistance
Load resistance R
L
( k
)
GP1S30
L= 0
L
90
70
50
30
10
100
80
60
40
20
3
1
2
Fig.10 Relative Collector Current vs.
L
L= 0
20
40
60
80
100
10
30
50
70
90
0.5
1
1.5
2
Moving distance
Fig.11 Relative Collector Current vs.
Relative collector current
(
%
)
Relative collector current
(
%
)
Shield
I
F
= 4mA
V
CE
= 5V
Shield Distance ( 1 )
Shield distance L ( mm )
I
F
= 4mA
V
CE
= 5V
Shield distance L ( mm )
Shield Distance ( 2 )
Shield
q
Please refer to the chapter "Precautions for Use " .
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