PC3H71
X
NIP Series
PC3Q71
X
NIP Series
PC3H71
X
NIP Series/PC3Q71
X
NIP Series
s
Rank Table
s
Absolute Maximum Ratings
s
Outline Dimensions
(Unit : mm)
Low Input Current Type
Photocoupler
1. Programmable controllers
2. Facsimiles
3. Telephones
s
Features
s
Applications
1. Low input current type(I
F
=
0.5mA)
2. High resistance to noise due to high common rejection
voltage (CMR:MIN. 10kV/
s)
3. Mini-flat package
4. Isolation voltage (Viso:2.5kVrms)
5. Recognized by UL, file No. E64380
Model No.
Rank mark
Ic (mA)
Conditions
PC3Q710NIP
PC3Q711NIP
A or no mark
A
0.5 to 3.0
1.0 to 2.5
I
F
=
0.5mA
V
CE
=
5V
T
a
=
25
C
*1 Pulse width<=100
s, Duty ratio
=
0.001
*2 40 to 60%RH, AC for 1 minute, f
=
60Hz
*3 For 10s
Parameter
Symbol
Rating
Unit
Forward current
Peak forward current
I
F
I
FM
10
200
mA
mA
mA
Reverse voltage
Input
Output
V
R
6
V
V
Power dissipation
Collector-emitter voltage
P
15
Collector power dissipation
Collector current
Total power dissipation
150
70
50
mW
mW
mW
P
tot
I
C
P
C
V
CEO
V
Emitter-collector voltage
6
V
ECO
V
iso
kV
rms
170
Operating temperature
T
opr
-
40 to
+
125
-
30 to
+
100
C
C
Storage temperature
Isolation voltage
T
stg
*2
*3
*1
Soldering temperature
T
sol
260
2.5
C
(Ta
=
25
C)
PC3Q71xNIP Series
0.4
0.1
H 7 1
P C 3 Q 7 1
0
.
4
0
.
1
4.4
0.2
0
.
2
0
.
0
5
5.3
0.3
0.5
+
0.4
-
0.2
7.0
+
0.2
-
0.7
Anode mark
0
.
1
0
.
1
2
.
0
0
.
2
Epoxy resin
Internal connection
diagram
1
.
2
7
0
.
2
5
2
.
6
0
.
3
1
2
3
4
Anode
Anode
Cathode
Emitter
Collector
0
.
2
0
.
0
5
5.3
0.3
C0.4
(Input side)
0.5
+
0.4
-
0.2
7.0
+
0.2
-
0.7
Epoxy resin
6
10.3
0.3
1.27
0.25
4
.
4
0
.
2
Primary side mark
8
1
9
16
16
14
12
15
13
10
11
9
1
3
5
2
4
7
6
8
7
5
3
1
6
4
2
13
11
9
14
12
10
8
15
16
Anode
Anode
Cathode
Emitter
Collector
PC3H71xNIP Series
1
2
4
3
Internal connection
diagram
1
4
3
2
2
.
6
0
.
2
0
.
1
0
.
1
0.2mm or more
Soldering area
Model No.
Rank mark
Ic (mA)
Conditions
PC3H710NIP
PC3H711NIP
PC3H712NIP
PC3H715NIP
A, B or no mark
A
A or B
B
0.5 to 3.5
0.7 to 1.75
0.7 to 2.5
1.0 to 2.5
I
F
=
0.5mA
V
CE
=
5V
T
a
=
25
C
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet
Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
PC3H71
X
NIP Series/PC3Q71
X
NIP Series
s
Electro-optical Characteristics
Fig.1 Test Circuit for Common Mode Rejection Voltage
Fig.2 Forward Current vs. Ambient
Temperature
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Forward voltage
Reverse current
Collector
current
Isolation resistance
Floating capacitance
Response time
Common mode rejection voltage
Terminal capacitance
Collector dark current
Emitter-collector breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Rise time
PC3H71
X
NIP Series
PC3Q71
X
NIP Series
Fall time
V
F
I
R
C
t
I
CEO
BV
CEO
BV
ECO
R
ISO
C
f
I
C
V
CE (sat)
tr
tf
CMR
Conditions
I
F
=
10mA
I
F
=
0.5mA, V
CE
=
5V
I
F
=
10mA, I
C
=
1mA
V
=
0, f
=
1kHz
V
CE
=
50V, I
F
=
0
I
C
=0.1mA, I
F
=0
I
E
=10
A, I
F
=0
DC500V 40 to 60%RH
V
=
0, f
=
1MHz
V
CE
=
2V, I
C
=
2mA, R
L
=
100
Ta
=
25
C, R
L
=
470
,
V
CM
=
1.5kV (peak),
I
F
=
0mA, V
CC
=
9V, Vnp
=
100mV
1.4
V
V
R
=
4V
-
-
-
-
-
-
70
6
0.5
5
10
10
1
10
11
30
1.2
-
-
3.0
3.5
250
-
0.6
1.0
-
4
18
-
3
18
100
-
10
-
-
10
V
-
-
-
V
V
-
0.2
-
A
s
s
kV/
s
mA
pF
pF
nA
(Ta
=
25
C)
I
n
p
u
t
O
u
t
p
u
t
T
r
a
n
s
f
e
r
c
h
a
r
a
c
t
e
r
i
s
t
i
c
s
*1 Refer to Fig.1.
*1
V
CM
V
cp
V
np
V
O
(dV/d
t
)
1)
R
L
V
np
V
CC
V
CM
V
CM :
High wave
pulse
R
L
=
470
V
CC
=
9V
1) V
cp
: Voltage which is generated by displacement current in floating
capacitance between primary and secondary side.
(V
cp
Nearly
=
dV/d
t
C
f
R
L
)
F
o
r
w
a
r
d
c
u
r
r
e
n
t
I
F
(
m
A
)
Ambient temperature T
a
(
C)
0
10
5
-
30
0
25
50
75
100
125
Fig.3 Diode Power Dissipation vs. Ambient
Temperature
D
i
o
d
e
p
o
w
e
r
d
i
s
s
i
p
a
t
i
o
n
P
(
m
W
)
Ambient temperature T
a
(
C)
0
15
10
5
-
30
0
25
50
75
100
125
PC3H71
X
NIP Series/PC3Q71
X
NIP Series
Fig.6 Peak Forward Current vs. Duty Ratio
Fig.7 Forward Current vs. Forward Voltage
P
e
a
k
f
o
r
w
a
r
d
c
u
r
r
e
n
t
I
F
M
(
m
A
)
Duty ratio
10
1000
100
10
-
2
10
-
3
10
-
1
2
2
2
5
5
5
5
1
2000
200
20
500
50
Pulse width
<=
100
s
T
a
=
25
C
F
o
r
w
a
r
d
c
u
r
r
e
n
t
I
F
(
m
A
)
0.1
1
10
100
0
0.5
1.0
1.5
2.0
Forward voltage V
F
(V)
T
a
=
25
C
T
a
=
75
C
T
a
=
100
C
T
a
=
50
C
T
a
=
0
C
T
a
=-
25
C
Fig.8 Current Transfer Ratio vs. Forward
Current
Fig.9 Current Transfer Ratio vs. Forward
Current
C
u
r
r
e
n
t
t
r
a
n
s
f
e
r
r
a
t
i
o
C
T
R
(
%
)
Forward current I
F
(mA)
0.1
1
10
0
800
700
600
500
400
300
200
100
V
CE
=
5V
T
a
=
25
C
PC3H71xNIP Series
C
u
r
r
e
n
t
t
r
a
n
s
f
e
r
r
a
t
i
o
C
T
R
(
%
)
Forward current I
F
(mA)
0.1
1
10
0
600
500
400
300
200
100
V
CE
=
5V
T
a
=
25
C
PC3Q71xNIP Series
Fig.5 Total Power Dissipation vs. Ambient
Temperature
Fig.4 Collector Power Dissipation vs.
Ambient Temperature
T
o
t
a
l
p
o
w
e
r
d
i
s
s
i
p
a
t
i
o
n
P
t
o
t
(
m
W
)
Ambient temperature T
a
(
C)
0
200
150
170
100
50
-
30
0
25
50
75
100
125
C
o
l
l
e
c
t
o
r
p
o
w
e
r
d
i
s
s
i
p
a
t
i
o
n
P
C
(
m
W
)
Ambient temperature T
a
(
C)
0
200
150
100
50
-
30
0
25
50
75
100
125
PC3H71
X
NIP Series/PC3Q71
X
NIP Series
Fig.14 Collector - emitter Saturation Voltage
vs. Ambient Temperature
C
o
l
l
e
c
t
o
r
-
e
m
i
t
t
e
r
s
a
t
u
r
a
t
i
o
n
v
o
l
t
a
g
e
V
C
E
(
s
a
t
)
(
V
)
Ambient temperature T
a
(
C)
0
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
I
F
=
10mA
I
C
=
1mA
-
30
100
90
80
70
60
50
40
30
20
10
0
-
10
-
20
Fig.15 Collector Dark Current vs. Ambient
Temperature
Fig.10 Collector Current vs. Collector-emitter
Voltage
Fig.11 Collector Current vs. Collector-emitter
Voltage
Ambient temperature T
a
(
C)
-
30
100
90
80
70
60
50
40
30
20
10
0
-
10
-
20
V
CE
=
50V
10
-
11
10
-
5
10
-
6
10
-
7
10
-
8
10
-
9
10
-
10
C
o
l
l
e
c
t
o
r
d
a
r
k
c
u
r
r
e
n
t
I
C
E
O
(
A
)
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
I
C
(
m
A
)
Collector-emitter voltage V
CE
(V)
0
40
0
2
4
6
8
10
T
a
=
25
C
30
20
10
P
C
(MAX.)
I
F
=
7mA
I
F
=
5mA
I
F
=
3mA
I
F
=
2mA
I
F
=
1mA
PC3H71xNIP Series
I
F
=
0.5mA
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
I
C
(
m
A
)
Collector-emitter voltage V
CE
(V)
0
40
0
2
4
6
8
10
T
a
=
25
C
30
20
10
P
C
(MAX.)
I
F
=
7mA
I
F
=
5mA
I
F
=
3mA
I
F
=
2mA
I
F
=
1mA
PC3Q71xNIP Series
I
F
=
0.5mA
Fig.12 Relative Current Transfer Ratio vs.
Ambient Temperature
Fig.13 Relative Current Transfer Ratio vs.
Ambient Temperature
R
e
l
a
t
i
v
e
c
u
r
r
e
n
t
t
r
a
n
s
f
e
r
r
a
t
i
o
(
%
)
Ambient temperature T
a
(
C)
-
30
100
90
80
70
60
50
40
30
20
10
0
-
10
-
20
V
CE
=
5V
I
F
=
0.5mA
0
150
100
50
PC3H71xNIP Series
R
e
l
a
t
i
v
e
c
u
r
r
e
n
t
t
r
a
n
s
f
e
r
r
a
t
i
o
(
%
)
Ambient temperature T
a
(
C)
-
30
100
90
80
70
60
50
40
30
20
10
0
-
10
-
20
V
CE
=
5V
I
F
=
0.5mA
0
150
100
50
PC3Q71xNIP Series
PC3H71
X
NIP Series/PC3Q71
X
NIP Series
Fig.16 Response Time vs. Load Resistance
R
e
s
p
o
n
s
e
t
i
m
e
(
s
)
0.1
1000
0.1
1
10
Load resistance R
L
(k
)
V
CE
=
2V
I
C
=
2mA
T
a
=
25
C
t
f
t
r
t
d
t
s
100
10
1
Fig.21 Reflow Soldering
25
C
2min
230
C
200
C
180
C
1min
1min
1.5min
30s
Only one time soldering is recommended within the temperature
profile shown below.
Fig.19 Voltage Gain vs Frequency
Fig.20 Collector-emitter Saturation Voltage
vs. Forward Current
C
o
l
l
e
c
t
o
r
-
e
m
i
t
t
e
r
s
a
t
u
r
a
t
i
o
n
v
o
l
t
a
g
e
V
C
E
(
s
a
t
)
(
V
)
Forward current I
F
(mA)
0
5
0
2
4
6
8
10
T
a
=
25
C
4
3
2
1
I
C
=
7mA
I
C
=
5mA
I
C
=
3mA
I
C
=
2mA
I
C
=
1mA
I
C
=
0.5mA
V
o
l
t
a
g
e
g
a
i
n
A
V
(
d
B
)
-
25
5
0.1
1
10
100
1000
Frequency f (kHz)
V
CE
=
2V
I
C
=
2mA
T
a
=
25
C
0
-
5
-
10
-
15
-
20
R
L
=
10k
1k
100
Fig.17 Response Time vs. Load Resistance
(Saturation)
Fig.18 Test Circuit for Response Time
R
e
s
p
o
n
s
e
t
i
m
e
(
s
)
0.1
1000
1
10
100
Load resistance R
L
(k
)
V
CC
=
5V
I
F
=
16mA
T
a
=
25
C
t
f
t
d
t
s
100
10
1
t
r
10%
Input
Output
Input
Output
90%
t
s
t
d
V
CC
R
D
R
L
t
f
t
r
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