Semiconductor Group
1
22/05/1997
BSP 170
SIPMOS
Small-Signal Transistor
P channel
Enhancement mode
Avalanche rated
V
GS(th)
= -2.1...-4.0 V
Pin 1
Pin 2
Pin 3
Pin 4
G
D
S
D
Type
V
DS
I
D
R
DS(on)
Package
Marking
BSP 170
-60 V
-1.7 A
0.35
SOT-223
Type
Ordering Code
Tape and Reel Information
BSP 170
Q67000-S . . .
E6327
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
A
= 25 C
I
D
-1.7
A
DC drain current, pulsed
T
A
= 25 C
I
Dpuls
-6.8
Avalanche energy, single pulse
I
D
= -1.7 A,
V
DD
= -25 V,
R
GS
= 25
L
= 3.23 mH,
T
j
= 25 C
E
AS
8
mJ
Gate source voltage
V
GS
20
V
Power dissipation
T
A
= 25 C
P
tot
1.8
W
Semiconductor Group
2
22/05/1997
BSP 170
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
1)
R
thJA
70
K/W
Thermal resistance, junction-soldering point
1)
R
thJS
10
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= -0.25 mA,
T
j
= 25 C
V
(BR)DSS
-60
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= -1 mA
V
GS(th)
-2.1
-3
-4
Zero gate voltage drain current
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 125 C
I
DSS
-
-
-10
-0.1
-100
-1
A
Gate-source leakage current
V
GS
= -20 V,
V
DS
= 0 V
I
GSS
-
-10
-100
nA
Drain-Source on-state resistance
V
GS
= -10 V,
I
D
= -1.7 A
R
DS(on)
-
0.255
0.35
Semiconductor Group
3
22/05/1997
BSP 170
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= -1.7 A
g
fs
1
1.35
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
C
iss
-
800
1100
pF
Output capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
C
oss
-
250
375
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
C
rss
-
95
145
Turn-on delay time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.3 A
R
G
= 50
t
d(on)
-
25
38
ns
Rise time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.3 A
R
G
= 50
t
r
-
80
120
Turn-off delay time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= 0.3 A
R
G
= 50
t
d(off)
-
130
175
Fall time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.3 A
R
G
= 50
t
f
-
150
200
Semiconductor Group
4
22/05/1997
BSP 170
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
-1.7
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
-6.8
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= -3.4 A
V
SD
-
-0.9
-1.2
V
Reverse recovery time
V
R
= 30 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/s
t
rr
-
80
-
ns
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/s
Q
rr
-
0.23
-
C
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