Type
Ordering Code Tape and Reel
Information
Pin Configuration
Marking
Package
1
2
3
4
BSP 280 Q67000-S279
E6327: 1000 pcs/reel
G
C
E
C
BSP 280
SOT-223
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous collector current
Soldering point,
T
S
= 25 C
T
S
= 80 C
I
C
2.5
1.5
A
Continuous collector current ambient,
T
A
= 80 C
I
C
0.5
Pulsed collector current
Soldering point,
T
S
= 80 C
I
C puls
3.0
Collector-emitter voltage
V
CE
1000
V
Gate-emitter voltage
V
GE
20
Power dissipation
Soldering point,
T
S
= 80 C
Ambient
T
A
= 25 C
P
tot
10
1.8
W
Operating and storage temperature range
T
j
,
T
stg
40 ... + 150
C
Thermal resistance
1)
chip-ambient
chip-soldering point
R
thJA
R
thJS
70
6
K/W
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
40/150/56
IGBT = Insulated Gate Bipolar Transistor
1)
Transistor on epoxy pcb 40 mm
40 mm
1.5 mm with 6 cm
2
copper area for drain connection.
IGBT Transistor
BSP 280
Preliminary Data
q
V
CE
1000 V
q
I
C
2.5 A
q
N channel
q
MOS input (voltage-controlled)
q
High switch speed
q
Very low tail current
q
Latch-up free
q
Suitable freewheeling diode BAX 280
BSP 280
Electrical Characteristics
at
T
j
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Collector-emitter breakdown voltage
V
GE
= 0,
I
C
= 0.1 mA
V
(BR)CES
1000
V
Gate threshold voltage
V
GE
=
V
CE
,
I
C
= 0.1 mA
V
GE(th)
4.5
5.5
6.5
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 0.5 A
T
j
= 25 C
T
j
= 125 C
T
j
= 150 C
V
CE(sat)
1.8
2.1
2.2
3.0
V
GE
= 15 V,
I
C
= 1.5 A
T
j
= 25 C
T
j
= 125 C
T
j
= 150 C
2.8
3.8
4.0
3.3
4.3
4.5
Zero gate voltage collector current
V
CE
= 1000 V,
V
GE
= 0
T
j
= 25 C
T
j
= 125 C
I
CES
1
25
100
A
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0
I
GES
0.1
100
nA
Dynamic Characteristics
Forward transconductance
V
CE
= 20 V,
I
C
= 1.5 A
g
fs
0.6
S
Input capacitance
V
CE
= 0,
V
GE
= 25 V,
f
= 1 MHz
C
i
iss
225
pF
Output capacitance
V
CE
= 0,
V
GE
= 25 V,
f
= 1 MHz
C
oss
25
Reverse transfer capacitance
V
CE
= 0,
V
GE
= 25 V,
f
= 1 MHz
C
rss
13
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
R
G(on)
= 25
,
I
C
= 1.5 A
t
d(on)
20
ns
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
R
G(on)
= 25
,
I
C
= 1.5 A
t
r
15
BSP 280
Package Outline
Turn-on losses
V
CC
= 600 V,
V
GE
= 15 V,
R
G(off)
= 25
,
I
C
= 1.5 A
E
on
0.3
mWs
Turn-off delay time
V
CC
= 600 V,
V
GE
= 15 V,
R
G(off)
= 25
,
I
C
= 1.5 A
t
d(off)
120
ns
Fall time
V
CC
= 600 V,
V
GE
= 15 V,
R
G(off)
= 25
,
I
C
= 1.5 A
t
f
20
Total turn-off losses
V
CC
= 600 V,
V
GE
= 15 V,
R
G(off)
= 25
,
I
C
= 1.5 A
E
off
0.2
mWs
Electrical Characteristics (cont'd)
at
T
j
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
SOT-223
Dimensions in mm
BSP 280
Characteristics
at
T
j
= 25 C, unless otherwise specified.
Typ. output characteristics
I
C
=
f
(
V
CE
)
parameter:
t
p
= 80
s
Typ. capacitances
C
=
f
(
V
CE
)
parameter:
V
GE
= 0 V,
f
= 1 MHz
Typ. transfer characteristics
I
C
=
f
(
V
GE
)
parameter:
t
p
= 80
s,
V
CE
= 20 V
Typ. saturation characteristics
V
CE(sat)
=
f
(
V
GE
); parameter:
T
j
= 25 C
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