PROFET Target Data Sheet BTS555
Semiconductor Group Page 1 of 16
1998-Jan-14
Smart Highside High Current Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Overtemperature protection
Overvoltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads
1)
Low ohmic inverse current operation
Reverse battery protection
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of
V
bb
protection
2)
Electrostatic discharge (ESD) protection
Application
Power switch with current sense diagnostic
feedback for 12
V and 24
V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS
chip on chip technology. Fully protected by embedded protection
functions.
IN
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
Overvoltage
protection
+ Vbb
PROFET
OUT
3 & Tab
1, 5
Load GND
Load
Output
Voltage
detection
R
IS
IS
4
I
IS
I
L
V
IS
I
IN
Logic GND
Voltage
sensor
Voltage
source
Current
Sense
Logic
ESD
Temperature
sensor
R
bb
V
IN
1
)
With additional external diode.
2)
Additional external diode required for energized inductive loads (see page 9).
Product Summary
Overvoltage protection
V
bb(AZ)
63
V
Output clamp
V
ON(CL)
42
V
Operating voltage
V
bb(on)
5.0
...
34
V
On-state resistance
R
ON
2.9
m
Load current (ISO)
I
L(ISO)
132
A
Short circuit current limitation
I
L(SCp)
400
A
Current sense ratio
I
L :
I
IS
25 000
TO-218AB/5
5
1
Straight leads
Target Data Sheet BTS555
Semiconductor Group
Page 2
1998-Jan-14
Pin
Symbol
Function
1
OUT
O
Output to the load. The pins
1 and 5 must be shorted with each other
especially in high current applications!
3)
2
IN
I
Input, activates the power switch in case of short to ground
3
Vbb
+
Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the V
bb
connection
instead of this pin
4)
.
4
IS
S
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 7)
5
OUT
O
Output to the load. The pins
1 and 5 must be shorted with each other
especially in high current applications!
3)
Maximum Ratings at
T
j
= 25 C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4)
V
bb
42
V
Supply voltage for full short circuit protection,
resistive load or L < tbd H
T
j,start
=-40 ...+150C:
V
bb
34
V
Load current (short circuit current, see page 5)
I
L
self-limited
A
Load dump protection
V
LoadDump
=
U
A
+
V
s
,
U
A
=
13.5
V
R
I
5
)
=
2
,
R
L
=
0.1
,
t
d
=
200
ms,
IN,
IS
= open or grounded
V
Load dump
6
)
80
V
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC), T
C
25 C
P
tot
310
W
Inductive load switch-off energy dissipation, single pulse
V
bb
=
12V,
T
j,start
=
150C,
T
C
=
150C const.,
I
L
=
tbd (>=20)
A, Z
L
=
tbd
mH, 0
,
see diagrams on
page 10
E
AS
tbd
J
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
V
ESD
2.0
kV
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 8
I
IN
I
IS
+15
, -250
+15
, -250
mA
3)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current
capability and decrease the current sense accuracy
4)
Otherwise add up to 0.5 m
(depending on used length of the pin) to the R
ON
if the pin is used instead of
the tab.
5)
R
I
= internal resistance of the load dump test pulse generator.
6)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Target Data Sheet BTS555
Semiconductor Group
Page 3
1998-Jan-14
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance
chip - case
:
R
thJC
7
)
--
--
0.40
K/W
junction - ambient (free air):
R
thJA
--
30
--
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at
T
j
=
-40 ... +150
C,
V
bb
=
12
V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance
(Tab to pins 1,5, see measurement
circuit page 8)
I
L
=
tbd (>=20)
A,
T
j
=
25
C:
V
IN
=
0,
I
L
=
tbd (>=20)
A
,
T
j
=
150
C:
R
ON
--
2.4
4.6
2.9
5.7
m
I
L
=
tbd
A
,
T
j
=
150
C:
tbd
tbd
V
bb
=
tbd V
8
)
,
I
L
=
tbd
A
,
T
j
=
150
C:
R
ON(Static)
--
tbd
tbd
Nominal load current
9
)
(Tab to pins 1,5)
ISO 10483-1/6.7:
V
ON
=
0.5
V,
Tc =
85
C
10
)
I
L(ISO)
111
132
--
A
Maximum load current in resistive range
(Tab to pins 1,5)
V
ON
=
1.8
V,
Tc =
25
C:
see diagram on page 13
V
ON
=
1.8
V,
Tc =
150
C:
I
L(Max)
tbd
tbd
--
--
--
--
A
Turn-on time
11
)
IIN
to 90%
V
OUT
:
Turn-off time
IIN
to 10%
V
OUT
:
R
L
=
1
,
T
j
=-40...+150C
t
on
t
off
130
60
--
--
550
240
s
Slew rate on
11)
(10 to 30%
V
OUT
)
R
L
=
1
d
V/dt
on
--
0.8
--
V/
s
Slew rate off
11)
(70 to 40%
V
OUT
)
R
L
=
1
-d
V/dt
off
--
0.8
--
V/
s
7)
Thermal resistance R
thCH
case to heatsink (about 0.25 K/W with silicone paste) not included!
8
)
Decrease of V
bb
below 10 V causes slowly a dynamic increase of R
ON
to a higher value of R
ON(Static)
. As
long as V
bIN
> V
bIN(u) max
, R
ON
increase is less than 10 % per second for T
J
< 85 C.
9)
Not tested, specified by design.
10)
T
J
is about 105C under these conditions.
11
) See timing diagram on page 14.
Inverse Load Current Operation
On-state resistance
(Pins 1,5 to pin 3)
V
bIN
=
12 V,
I
L
=
-
tbd (>=20)
A
T
j
=
25
C:
see diagram on page 10
T
j
=
150
C:
R
ON(inv)
--
2.4
4.6
2.9
5.7
m
Nominal inverse load current
(Pins 1,5 to Tab)
V
ON
=
-0.5
V,
Tc =
85
C
10
I
L(inv)
111
132
--
A
Drain-source diode voltage
(V
out
> V
bb
)
I
L
=
-
tbd (>=20)
A, I
IN
= 0, T
j
=
+150C
-
V
ON
--
tbd
--
mV
Target Data Sheet BTS555
Parameter and Conditions
Symbol
Values
Unit
at
T
j
=
-40 ... +150
C,
V
bb
=
12
V unless otherwise specified
min
typ
max
Semiconductor Group
Page 4
1998-Jan-14
Operating Parameters
Operating voltage (
V
IN
=
0)
Fehler! Textmarke nicht definiert.,
12
)
V
bb(on)
5.0
--
34
V
Undervoltage shutdown
13
)
V
bIN(u)
--
3.5
4.5
V
Undervoltage start of charge pump
see diagram page
15
V
bIN(ucp)
--
5
6.5
V
Overvoltage protection
14
)
T
j
=-40C:
I
bb
=
15
mA
T
j
=
25...+150C:
V
bIN(Z)
60
62
--
66
--
--
V
Standby current
T
j
=-40...+25C:
I
IN
=
0
T
j
=
150C:
I
bb(off)
--
--
15
25
25
60
A
Protection Functions
Short circuit current limit
(Tab to pins 1,5)
V
ON
=
12
V, time until shutdown max. 300
s
T
c
=-40C:
T
c
=25C:
T
c
=+150C:
I
L(SCp)
--
tbd
tbd
460
400
280
--
tbd
tbd
A
Short circuit shutdown delay after input current
positive slope,
V
ON
>
V
ON(SC)
min. value valid only if input "off-signal" time exceeds 30
s
t
d(SC)
80
--
300
s
Output clamp
15
)
I
L
= 40 mA:
(inductive load switch off)
I
L
= 20 A:
-
V
OUT(CL)
--
--
15
17
--
--
V
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
(e.g. overvoltage)
I
L
= 40 mA
V
ON(CL)
39
42
46
V
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
V
ON(SC)
--
6
--
V
12
) For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit.
13
) V
bIN
= V
bb
-
V
IN
see diagram on page 8. When
V
bIN
increases from less than V
bIN(u)
up to
V
bIN(ucp)
= 5
V
(typ.) the charge pump is not active and
V
OUT
V
bb
-
3
V.
14)
See also
V
ON(CL)
in circuit diagram on page 9.
15
) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, V
OUT
is clamped to V
bb
- V
ON(CL)
at inductive load switch off.
Target Data Sheet BTS555
Parameter and Conditions
Symbol
Values
Unit
at
T
j
=
-40 ... +150
C,
V
bb
=
12
V unless otherwise specified
min
typ
max
Semiconductor Group
Page 5
1998-Jan-14
Thermal overload trip temperature
T
jt
150
--
--
C
Thermal hysteresis
T
jt
--
10
--
K
Reverse Battery
Reverse battery voltage
16
)
-
V
bb
--
--
16
V
On-state resistance
(Pins 1,5 to pin 3)
T
j
=
25
C:
V
bb
=
-12V,
V
IN
=
0,
I
L
=
-
tbd (>=20)
A,
R
IS
=
1
k
T
j
=
150
C:
R
ON(rev)
--
2.8
0
tbd
0
m
Integrated resistor in V
bb
line
R
bb
--
120
--
Diagnostic Characteristics
Current sense ratio, static on-condition,
-40C:
k
ILIS
=
I
L
:
I
IS
, V
ON
<
1.5
V
17)
,
25C:
V
IS
<
V
OUT
-
5 ???
V,
V
bIN
>
4.5
V
150C:
k
ILIS
--
--
--
26 530
25 430
23 520
--
--
--
I
L
=
180
A:
see diagram on page 12
I
L
=
50
A:
I
L
=
25
A:
I
L
=
10
A:
-40C:
4.5%
8.9%
15%
46%
+25C:
4.2%
7.5%
12%
36%
150C:
4.0%
6.1%
9.0%
24%
I
IN
= 0
(e.g. during deenergizing of inductive loads)
:
--
0
--
Sense current saturation
I
IS,lim
6.5
--
--
mA
Current sense leakage current
I
IN
=
0,
V
IS
=
0:
V
IN
=
0,
V
IS
=
0,
I
L
0:
I
IS(LL)
I
IS(LH)
--
--
--
2
0.5
--
A
Current sense settling time
18
)
after positive input
slope (90% of
I
IS
static)
I
L
=
0
/
tbd (>=20)
A:
t
son(IS)
--
tbd
500
s
Current sense settling time
18)
after negative input
slope (10% of
I
IS
static)
I
L
=
tbd (>=20)
/
0
A:
t
soff(IS)
--
tbd
500
s
Current sense settling time
18)
after change of load
current (60% to 90%)
I
L
=
15
/
tbd (>=20)
A:
t
slc(IS)
--
tbd
500
s
Overvoltage protection
T
j
=-40C:
I
bb
=
15
mA
T
j
=
25...+150C:
V
bIS(Z)
60
62
--
66
--
--
V
16
) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load
(as it is done with all polarity symmetric loads). Note that under off-conditions (
I
IN
=
I
IS
=
0) the power
transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the
intrinsic drain-source diode. The temperature protection is not active during reverse current operation!
Increasing reverse battery voltage capability is simply possible as described on page 9.
17)
If V
ON
is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see
I
IS,lim
.
18
) Not tested, specified by design.
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