Semiconductor Group 44
IL211AT/IL212AT/IL213AT
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
Package Dimensions in Inches (mm)
TOLERANCE:
.005 (unless otherwise noted)
FEATURES
High Current Transfer Ratio
IL211AT--20% Minimum
IL212AT--50% Minimum
IL213AT--100% Minimum
Isolation Voltage, 2500 VAC
RMS
Electrical Specifications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL211AT/212AT/213AT are optically coupled
pairs with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the device
while maintaining a high degree of electrical isolation
between input and output. The IL211AT//212AT/
213AT comes in a standard SOIC-8 small outline
package for surface mounting which makes it ideally
suited for high density applications with limited space.
In addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A choice of 20, 50, and 100% minimum CTR at
I
F
=10 mA makes these optocouplers suitable for a
variety of different applications.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................... 6.0 V
Continuous Forward Current .......................... 60 mA
Power Dissipation at 25
C ............................. 90 mW
Derate Linearly from 25
C ....................... 1.2 mW/
C
Detector
Collector-Emitter Breakdown Voltage ................ 30 V
Emitter-Collector Breakdown Voltage .................. 7 V
Collector-Base Breakdown Voltage ................... 70 V
Power Dissipation ........................................ 150 mW
Derate Linearly from 25
C ....................... 2.0 mW/
C
Package
Total Package Dissipation at 25
C Ambient
(LED + Detector) ...................................... 280 mW
Derate Linearly from 25
C ....................... 3.3 mW/
C
Storage Temperature ..................... 55
C to +150
C
Operating Temperature ................. 55
C to +100
C
Soldering Time at 260
C ............................... 10 sec.
Characteristics
(T
A
=25
C)
Symbol Min. Typ.
Max. Unit
Condition
Emitter
Forward Voltage
V
F
1.3
1.5
V
I
F
=10 mA
Reverse Current
I
R
0.1
100
A
V
R
=6.0 V
Capacitance
C
O
25
pF
V
R
=0
Detector
Breakdown Voltage
BV
CEO
30
V
I
C
=10
A
BV
ECO
7
V
I
E
=10
A
Collector-Emitter
V
CE
=10 V,
Dark Current
I
CEOdark
5
50
nA
I
F
=0
Collector-Emitter
Capacitance
C
CE
10
pF
V
CE
=0
Package
DC Current Transfer CTR
DC
%
I
F
=10 mA
V
CE
=5 V
IL211AT
20
50
IL212AT
50
80
IL213AT
100 130
Collector-Emitter
Saturation Voltage V
CE sat
0.4
I
F
=10 mA,
I
C
=2.0 mA
Isolation Test
Voltage
V
IO
2500
VAC
RMS
Capacitance,
Input to Output
C
IO
0.5
pF
Resistance,
Input to Output
R
IO
100
G
Switching Time
t
ON
, t
OFF
3.0
s
I
C
=2 mA,
R
E
=100
,
V
CE
=10 V
Specifications subject to change.
40
.240
(6.10)
.154
.005
(3.91
.13)
.050 (1.27)
typ.
.016 (.41)
.192
.005
(4.88
.13)
.004 (.10)
.008 (.20)
Lead
Coplanarity
.0015 (.04)
max.
.015
.002
(.38
.05)
.008 (.20)
7
.058
.005
(1.49
.13)
.125
.005
(3.18
.13)
Pin One ID
.120
.005
(3.05
.13)
CL
.021 (.53)
5
max.
R.010
(.25) max.
.020
.004
(.15
.10)
2 plcs.
1
2
3
4
Anode
Cathode
NC
NC
8
7
6
5
NC
Base
Collector
Emitter
NEW
10.95
Semiconductor Group 45
.1
1
10
100
0.0
0.5
1.0
1.5
Vce = 5 V
Vce = 0.4 V
NCTRce - Normalized CTRce
Normalized to:
Vce = 10 V
IF = 10 mA
Ta = 25
C
IF - LED Current - mA
Figure 2. Normalized non-saturated and
saturated CTRce versus LED current
Figure 3. Collector-emitter current versus LED
current
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
25
C
50
C
70
C
Ib - Base Current -
A
NHFE(sat) - Normalized
Saturated HFE
Normalized to:
Ib = 20
A
Vce = 10 V
Ta = 25
C
Vce = 0.4 V
Figure 8. Normalized saturated HFE versus
base current and temperature
Figure 7. Collector-emitter leakage current
versus temperature
100
80
60
40
20
0
-20
10
10
10
10
10
10
10
10
-2
-1
0
1
2
3
4
5
Ta - Ambient Temperature -
C
Iceo - Collector-Emitter - nA
TYPICAL
Vce = 10V
Figure 1. Forward voltage versus forward current
100
10
1
.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current - mA
VF - Forward Voltage - V
Ta = -55
C
Ta = 25
C
Ta = 85
C
Figure 4. Normalized collector-base
photocurrent versus LED current
.1
1
10
100
0
50
100
150
Vce = 0.4 V
Vce = 10 V
IF - LED Current - mA
Ice - Collector-emitter
Current - mA
Ta = 25
C
.1
1
10
100
.01
.1
1
10
Normalized to:
Vcb
=
9.3
V
IF
=
10
mA
Ta
=
25
C
IF - LED Current - mA
NIc
b
-
Nor
m
a
l
i
ze
d I
c
b
.1
1
10
100
.1
1
10
100
1000
IF - LED Current - mA
I
cb - Collect
o
r
-
b
ase
Current
-
A
Ta = 25
C
Vcb = 9.3 V
Figure 5. Normalized collector-base
photocurrent versus LED current
Figure 6. Collector-base photocurrent versus
LED current
.1
1
10
100
.1
1
10
100
IF - LED Current - mA
NIc
b
-
Nor
m
a
l
i
ze
d I
c
b
Normalized to:
Vcb = 9.3 V
IF = 1 mA
Ta = 25
C
Semiconductor Group 46
Figure 9. Typical switching characteristics
versus base resistance
(saturated operation)
Figure 10. Typical switching times
versus load resistance
100
50
10
5
1.0
Input:
IF =10mA
Pulse width=100 mS
Duty cycle=50%
Base-emitter resistance, RBE (
)
T
OFF
T
ON
Switching time (
s)
10K 50K 100K 500K 1M
1000
500
100
50
10
5
1
0.1 0.5 1 5 10 50 100
Input:
I
F
=10 mA
Pulse width=100 mS
Duty cycle=50%
T
OFF
T
ON
Load resistance RL (K
)
Switching time (
S)
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